APM2701CG [ANPEC]
Dual Enhancement Mode MOSFET (N and P-Channel); 双通道增强型MOSFET （N沟道和P沟道）
| 型号： | APM2701CG |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | Dual Enhancement Mode MOSFET (N and P-Channel) |
| 文件： | 总13页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2701CG
Dual Enhancement Mode MOSFET (N and P-Channel)
Pin Description
Features
Top View
·
·
·
N-Channel
G1
20V/3A,
D1
S1
D2
1
2
3
6
5
4
RDS(ON)=50mW(typ.) @ VGS=4.5V
RDS(ON)=90mW(typ.) @ VGS=2.5V
S2
G2
P-Channel
-20V/-1.5A,
JSOT-6
Top View of JSOT-6
RDS(ON)=145mW(typ.) @ VGS=-4.5V
RDS(ON)=180mW(typ.) @ VGS=-2.5V
(6)D1
(2)S2
Super High Dense Cell Design
·
·
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(1)G1
(3)G2
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(5)S1
(4)D2
N-ChannelMOSFET
P-Channel MOSFET
Ordering and Marking Information
Package Code
CG : JSOT-6
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
APM2701
Lead Free Code
Handling Code
Temp. Range
Package Code
Lead Free Code
L : Lead Free Device Blank : Original Device
M71X
XXXXX - Date Code
APM2701CG :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
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Rev. A.1 - Jun., 2006
APM2701CG
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
Parameter
N Channel P Channel
Unit
20
±10
3
-20
±10
-1.5
-6
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
A
A
VGS=±4.5V
10
1
IDM
*
300ms Pulsed Drain Current
IS*
Diode Continuous Forward Current
-1
TJ
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
0.83
TA=25°C
W
PD*
Power Dissipation
TA=100°C
0.3
RqJA
Note:
*
Thermal Resistance-Junction to Ambient
°C/W
150
*Surface Mounted on 1in2 pad area, t £ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2701CG
Symbol
Parameter
Test Condition
Unit
V
Min.
Typ. Max.
Static Characteristics
Drain-Source Breakdown
N-Ch
P-Ch
20
VGS=0V, IDS=250mA
BVDSS
Voltage
-20
VGS=0V, IDS=-250mA
VDS=16V, VGS=0V
1
N-Ch
P-Ch
TJ=85°C
VDS=-16V, VGS=0V
TJ=85°C
30
-1
Zero Gate Voltage Drain
Current
IDSS
mA
-30
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.45
0.6
1
VDS=VGS, IDS=250mA
VDS=VGS, IDS=-250mA
VGS(th)
V
Gate Threshold Voltage
Gate Leakage Current
-0.45
-0.6
-1
±100
±100
70
IGSS
VGS=±10V, VDS=0V
nA
VGS=4.5V, IDS=3A
VGS=-4.5V, IDS=-1.5A
VGS=2.5V, IDS=1.7A
VGS=-2.5V, IDS=-1A
50
145
90
190
110
235
Drain-Source On-State
Resistance
a
RDS(ON)
mW
180
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Rev. A.1 - Jun., 2006
APM2701CG
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM2701CG
Symbol
Parameter
Test Condition
Unit
Min.
Typ. Max.
Static Characteristics (Cont.)
ISD=0.5A, VGS=0V
N-Ch
P-Ch
0.7
1.3
a
VSD
Diode Forward Voltage
V
ISD=-0.5A, VGS=0V
-0.7
-1.3
Dynamic Characteristics b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
270
300
70
50
50
30
6
N-Channel
VGS=0V,
VDS=10V,
Frequency=1.0MHz
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
Output Capacitance
pF
P-Channel
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
Reverse Transfer
Capacitance
12
10
10
12
23
15
12
10
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
N-Channel
6
VDD=10V, RL=10W,
IDS=1A, VGEN=4.5V,
RG=6W
5
8
ns
12
10
6
P-Channel
td(OFF)
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-4.5V,
RG=6W
Tf
5
Gate Charge Characteristics b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
4
6.5
6
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
VDS=10V, VGS=4.5V,
IDS=3A
0.5
0.6
1.6
1
nC
P-Channel
VDS=-10V, VGS=-4.5V,
IDS=-1.5A
Notes:
a : Pulse test ; pulse width £300ms, duty cycle £ 2%.
b : Guaranteed by design, not subject to production testing.
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APM2701CG
Typical Characteristics
N-Channel
Power Dissipation
Drain Current
1.0
0.8
0.6
0.4
0.2
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
50
10
Duty = 0.5
0.2
0.1
300ms
1
0.1
1ms
0.1
0.05
0.02
10ms
100ms
0.01
1s
DC
Mounted on 1in2 pad
Single Pulse
qJA : 150 oC/W
TA=25oC
R
0.01
0.01
1E-4 1E-3 0.01
0.1
1 10 30
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
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APM2701CG
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
12
VGS= 3,4,5,6,7,8,9,10V
VGS=2.5V
2.5V
10
8
6
VGS=4.5V
2V
4
2
1.5V
0
0
1
2
3
4
5
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
9
8
7
6
5
4
3
2
1
0
IDS =250mA
Tj=125oC
Tj=-55oC
Tj=25oC
-50 -25
0
25 50 75 100 125 150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
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APM2701CG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
2.0
VGS = 4.5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS = 3A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 50mW
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
400
300
200
100
0
Frequency=1MHz
VDS= 10V
IDS = 3A
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
1
2
3
4
5
6
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. A.1 - Jun., 2006
APM2701CG
Typical Characteristics
P-Channel
Power Dissipation
Drain Current
1.8
1.5
1.2
0.9
0.6
0.3
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
50
10
Duty = 0.5
0.2
300ms
1
0.1
0.1
1ms
0.1
0.05
10ms
0.02
0.01
100ms
1s
DC
Mounted on 1in2 pad
Single Pulse
TA=25oC
R
qJA : 150 oC/W
1 10 30
0.01
0.01
1E-4 1E-3 0.01
0.1
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
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Rev. A.1 - Jun., 2006
APM2701CG
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
6
0.30
0.25
0.20
0.15
0.10
0.05
0.00
VGS= -3,-4,-5,-6,-7,-8,-9,-10V
5
-2V
4
3
2
1
0
VGS= -2.5V
VGS= -4.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS = -250mA
Tj=25oC
Tj=-55oC
Tj=125oC
-50 -25
0
25 50 75 100 125 150
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ã ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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APM2701CG
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
6
1.8
VGS = -4.5V
1.6 IDS = -1.5A
Tj=150oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj=25oC
1
RON@Tj=25oC: 145mW
0.0
-50 -25
0.1
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
500
400
300
200
100
0
5
Frequency=1MHz
VDS= -10V
IDS= -1.5A
4
3
2
1
0
Ciss
Coss
Crss
0
1
2
3
4
5
0
4
8
12
16
20
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
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Rev. A.1 - Jun., 2006
APM2701CG
Packaging Information
JSOT-6
b
C
e
e
D
Millimeters
Min.
Inches
Dim
Max.
1.10
0.10
1.00
0.40
0.20
3.10
3.00
2.50
3.05
Min.
Max.
0.043
0.004
0.039
0.016
0.008
0.122
0.118
0.098
0.120
A
A1
A2
b
0.935
0.01
0.925
0.25
0.10
2.95
2.50
2.30
2.65
0.037
0.0004
0.036
0.010
0.004
0.116
0.098
0.091
0.104
c
D
E
E1
E2
e
0.95 BSC
0.037 BSC
L
0.30
0
0.60
8°
0.012
0.024
8°
?
0
7° N0M.
7° N0M.
?1
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APM2701CG
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
Preheat
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
183°C
60-150 seconds
217°C
60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. A.1 - Jun., 2006
APM2701CG
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
³ 2.5 mm
240 +0/-5°C
225 +0/-5°C
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
250 +0°C*
245 +0°C*
260 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
Ko
F
W
Ao
D1
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Rev. A.1 - Jun., 2006
APM2701CG
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
SOT-23-6
A
B
C
J
T1
72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 8.4 ± 2
D1 Po P1
T2
W
P
E
8.0+ 0.3
- 0.3
178±1
1.5± 0.3
4 ± 0.1 1.75± 0.1
Ko
F
D
Ao
Bo
t
3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 1.4± 0.1 0.2±0.03
(mm)
Cover Tape Dimensions
Application
SOT-23-6
Carrier Width
Cover Tape Width
Devices Per Reel
8
5.3
3000
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
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