APM2801BC-TR [ANPEC]
P-Channel Enhancement Mode MOSFET with Schottky Diode; P沟道增强型MOSFET与肖特基二极管
| 型号： | APM2801BC-TR |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | P-Channel Enhancement Mode MOSFET with Schottky Diode |
| 文件： | 总11页 (文件大小：606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2801B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Pin Description
Features
MOSFET
·
-20V/-1.5A ,
RDS(ON)=145mW(typ.) @ VGS=-4.5V
RDS(ON)=180mW(typ.) @ VGS=-2.5V
·
·
·
Super High Dense Cell Design
Reliable and Rugged
Top View of SOT-25
(2)S
(4)C
Lead Free Available (RoHS Compliant)
SBD
·
Low Forward Voltage
(1)G
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(5)D
(3)A
P-ChannelMOSFET
SBD
Ordering and Marking Information
Package Code
B : SOT-25
Operating Junction Temp. Range
APM2801
Lead Free Code
Handling Code
Temp. Range
Package Code
C : -55 to 150 C
Handling Code
°
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
M81X
APM2801B :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
1
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Rev. B.4 - Jun., 2005
APM2801B
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
[MOSFET]
-20
±10
-1.5
-6
VDSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
VGSS
ID
IDM
IS
A
A
VGS=-4.5V
300ms Pulsed Drain Current
Diode Continuous Forward Current
-1
TJ
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
0.83
TA=25°C
W
PD
Maximum Power Dissipation
TA=100°C
0.3
*
JA
Rq
Thermal Resistance-Junction to Ambient
150
°C/W
[SBD]
VRRM
IFSM
Note:
Repetitive Peak Reverse Voltage
20
V
A
Maximum Peak Forward Surge Current
5.5
£
*Surface Mounted on 1in2 pad area, t 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2801B
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
[MOSFET]
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
V
m
VGS=0V, IDS=-250 A
VDS=-16V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
m
A
TJ=85°C
-30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
m
-0.45 -0.6
-1
V
VDS=VGS, IDS=-250 A
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-1.5A
VGS=-2.5V, IDS=-1A
ISD=-0.5A , VGS=0V
±100
190
235
-1.3
nA
145
180
-0.7
a
RDS(ON) Drain-Source On-state Resistance
W
m
a
VSD
Diode Forward Voltage
V
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Rev. B.4 - Jun., 2005
APM2801B
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM2801B
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
[MOSFET]
Dynamic Characteristics b
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
255
70
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
pF
ns
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
45
6
8
10
12
15
10
W
VDD=-10V, RL=10 ,
IDS=-1A, VGEN=-4.5V,
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
9.8
5
W
RG=6
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
4
6
VDS=-10V, VGS=-4.5V,
IDS=-1.5A
nC
0.6
0.7
[SBD]
VR
Reverse Voltage
Forward Voltage
Reverse Current
Junction Capacitance
IR=0.5mA
IF=10mA
IF=500mA
VR=15V
20
V
V
V
VF1
VF2
IR
0.4
0.5
200
m
A
VR=10V,
Frequency=1.0MHz
b
45
pF
C
Notes:
£
m
£
a : Pulse test ; pulse width 300 s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.4 - Jun., 2005
APM2801B
Typical Characteristics
P-Channel MOSFET
Power Dissipation
1.0
Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
20
10
Duty = 0.5
0.2
300ms
1
1ms
0.1
10ms
0.1
0.05
100ms
0.02
0.01
0.1
1s
DC
Single Pulse
Mounted on 1in2 pad
TA=25oC
R
qJA : 150 oC/W
0.01
0.01
0.01
0.1
1
10
100
1E-4 1E-3 0.01
0.1
1
10 30
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
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Rev. B.4 - Jun., 2005
APM2801B
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
0.28
0.24
0.20
0.16
0.12
0.08
0.04
VGS= -3 thru -10V
-2.5V
VGS= -2.5V
8
6
4
2
0
-2V
VGS= -4.5V
0
1
2
3
4
0
2
4
6
8
10
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS = -250mA
Tj=-55oC
Tj=25oC
Tj=125oC
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
-50 -25
0
25 50 75 100 125 150
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ã ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
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APM2801B
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
6
VGS = -4.5V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS = -1.5A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 145mW
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
400
300
200
100
0
Frequency=1MHz
VDS=-10 V
IDS=-1.5 A
4
3
2
1
0
Ciss
Coss
Crss
0
1
2
3
4
5
0
4
8
12
16
20
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
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Rev. B.4 - Jun., 2005
APM2801B
Typical Characteristics (Cont.)
SBD
IF - VF
IR - VR
0.1
0.01
1E-3
1E-4
1E-5
1E-6
1E-7
6
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
0
3
6
9
12
15
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
C - VR
200
Frequency=1MHz
150
100
50
0
0
5
10
15
20
25
VR - ReverseVoltage (V)
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Rev. B.4 - Jun., 2005
APM2801B
Packaging Information
SOT-23-5
e1
5
4
3
E1
E
1
2
e
b
D
A2
L 1
A
a
A1
L 2
L
Millimeters
Inches
Dim
Min.
0.95
0.05
0.90
0.30
2.8
Max.
1.45
0.15
1.30
0.50
3.00
3.00
1.70
Min.
0.037
0.002
0.035
0.011
0.110
0.102
0.059
Max.
0.057
0.006
0.051
0.019
0.118
0.118
0.067
A
A1
A2
b
D
E
E1
e
e1
L
L1
L2
N
2.6
1.5
0.037BSC
0.074BSC
0.95BSC
1.90BSC
0.014
0.020
0.022
0.028
0.35
0.5
0.55
0.7
0.20 BSC
5
0.008 BSC
5
a
°
°
°
°
10
0
10
0
Copyright ã ANPEC Electronics Corp.
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Rev. B.4 - Jun., 2005
APM2801B
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ã ANPEC Electronics Corp.
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Rev. B.4 - Jun., 2005
APM2801B
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
°
°
225 +0/-5 C
240 +0/-5 C
³
°
°
2.5 mm
225 +0/-5 C
225 +0/-5 C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
°
°
°
260 +0 C*
260 +0 C*
260 +0 C*
1.6 mm – 2.5 mm
°
°
°
245 +0 C*
260 +0 C*
250 +0 C*
³
°
°
°
245 +0 C*
2.5 mm
*Tolerance: The device manufacturer/supplier
including the stated classification temperature (this means Peak reflow temperature +0 C.
250 +0 C*
245 +0 C*
shall
assure process compatibility up to and
°
°
°
For example 260 C+0 C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.4 - Jun., 2005
APM2801B
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
A
B
C
J
T1
T2
W
P
E
Application
SOT-23-5
8.0+ 0.3
- 0.3
178 1
72 1.0 13.0 + 0.2 2.5 0.15 8.4
2
1.5 0.3
4
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
SOT-23-5
Carrier Width
Cover Tape Width
Devices Per Reel
8
5.3
3000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
11
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