APM2800BC-TU [ANPEC]
N-Channel Enhancement Mode MOSFET with Schottky Diode; N沟道增强模式，肖特基二极管的MOSFET
| 型号： | APM2800BC-TU |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET with Schottky Diode |
| 文件： | 总11页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2800B
N-Channel Enhancement Mode MOSFET with Schottky Diode
Pin Description
Features
MOSFET
·
20V/3A ,
RDS(ON)=50mW(typ.) @ VGS=4.5V
RDS(ON)=90mW(typ.) @ VGS=2.5V
·
·
·
Super High Dense Cell Design
Reliable and Rugged
Top View of SOT-25
(5)
D
(4)
C
Lead Free Available (RoHS Compliant)
SBD
·
Low Forward Voltage
(1)
G
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S
(2)
A
(3)
N-ChannelMOSFET
SBD
Ordering and Marking Information
Package Code
B : SOT-25
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
APM2800
Lead Free Code
°
Handling Code
Temp. Range
Package Code
TU : Tube
Lead Free Code
TR : Tape & Reel
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
M80X
APM2800B :
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
1
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
[MOSFET]
VDSS
20
±10
3
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
VGSS
ID*
A
A
VGS=4.5V
10
1
IDM*
m
300 s Pulsed Drain Current
*
IS
Diode Continuous Forward Current
TJ
150
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
-55 to 150
0.83
TA=25°C
W
*
PD
Maximum Power Dissipation
TA=100°C
0.3
*
JA
Rq
Thermal Resistance-Junction to Ambient
150
°C/W
[SBD]
VRRM
IFSM
Repetitive Peak Reverse Voltage
20
V
A
Maximum Peak Forward Surge Current
5.5
Note:
*Surface Mounted on 1in2 pad area, t £ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2800B
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
[MOSFET]
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
20
V
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
0.45
0.6
1
V
m
VDS=VGS, IDS=250 A
VGS=±10V, VDS=0V
VGS=4.5V, IDS=3A
VGS=2.5V, IDS=1.7A
ISD=0.5A, VGS=0V
±100
70
nA
mW
V
50
90
a
RDS(ON) Drain-Source On-state Resistance
110
1.3
a
VSD
Diode Forward Voltage
0.7
Copyright ã ANPEC Electronics Corp.
2
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM2800B
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
[MOSFET]
Dynamic Characteristics b
Ciss Input Capacitance
Coss Output Capacitance
255
70
VGS=0V,
VDS=20V,
Frequency=1.0MHz
pF
ns
Crss
Reverse Transfer Capacitance
50
td(ON) Turn-on Delay Time
6
5
12
10
23
12
W
VDD=10V, RL=10 ,
IDS=1A, VGEN=4.5V,
Tr
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
Turn-on Rise Time
12
6
W
RG=6
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5
6.5
VDS=10V, VGS=4.5V,
IDS=3A
nC
0.7
0.7
[SBD]
VR
Reverse Voltage
Forward Voltage
Reverse Current
Junction Capacitance
IR=0.5mA
IF=10mA
IF=500mA
VR=15V
20
V
V
V
VF1
VF2
IR
0.4
0.5
200
m
A
VR=10V,
Frequency=1.0MHz
b
45
pF
C
Notes:
a: Pulse test ; pulse width £300ms, duty cycle £ 2%
b: Guaranteed by design, not subject to production testing
Copyright ã ANPEC Electronics Corp.
3
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Typical Characteristics
N-Channel MOSFET
Power Dissipation
1.0
Drain Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
30
10
Duty = 0.5
0.2
0.1
300ms
1
0.1
1ms
0.1
0.05
0.02
10ms
100ms
1s
0.01
DC
Mounted on 1in2 pad
Single Pulse
TA=25oC
R
qJA : 150 oC/W
0.01
0.01
1E-4 1E-3 0.01
0.1
1
10 30
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ã ANPEC Electronics Corp.
4
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VGS= 3,4,5,6,7,8,9,10V
9
VGS=2.5V
8
7
2.5V
6
5
4
VGS=4.5V
3
2V
2
1
0
0
1
2
3
4
5
6
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
10
9
8
7
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS =250mA
Tj=125oC
Tj=-55oC
Tj=25oC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright ã ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
5
www.anpec.com.tw
APM2800B
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
10
VGS = 4.5V
IDS = 3A
1.6
Tj=150oC
1.4
1.2
1.0
0.8
0.6
0.4
Tj=25oC
1
RON@Tj=25oC: 50mW
0.2
-50 -25
0.1
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
400
300
200
100
0
Frequency=1MHz
VDS= 10V
IDS= 3A
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
1
2
3
4
5
6
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
6
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Typical Characteristics (Cont.)
SBD
IF - VF
IR - VR
0.1
0.01
1E-3
1E-4
1E-5
1E-6
1E-7
6
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
0
3
6
9
12
15
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
C - VR
200
Frequency=1MHz
150
100
50
0
0
5
10
15
20
25
VR - ReverseVoltage (V)
Copyright ã ANPEC Electronics Corp.
7
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Packaging Information
SOT-23-5
e1
5
4
3
E1
E
1
2
e
b
D
A2
L 1
A
a
A1
L 2
L
Millimeters
Inches
Dim
Min.
0.95
0.05
0.90
0.30
2.8
Max.
1.45
0.15
1.30
0.50
3.00
3.00
1.70
Min.
0.037
0.002
0.035
0.011
0.110
0.102
0.059
Max.
0.057
0.006
0.051
0.019
0.118
0.118
0.067
A
A1
A2
b
D
E
E1
e
e1
L
L1
L2
N
2.6
1.5
0.037BSC
0.074BSC
0.95BSC
1.90BSC
0.014
0.020
0.022
0.028
0.35
0.5
0.55
0.7
0.20 BSC
5
0.008 BSC
5
a
°
°
°
°
10
0
10
0
Copyright ã ANPEC Electronics Corp.
8
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ã ANPEC Electronics Corp.
9
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
°
°
225 +0/-5 C
240 +0/-5 C
³
°
°
2.5 mm
225 +0/-5 C
225 +0/-5 C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
°
°
°
260 +0 C*
260 +0 C*
260 +0 C*
1.6 mm – 2.5 mm
°
°
°
245 +0 C*
260 +0 C*
250 +0 C*
³
°
°
°
245 +0 C*
2.5 mm
*Tolerance: The device manufacturer/supplier
including the stated classification temperature (this means Peak reflow temperature +0 C.
250 +0 C*
245 +0 C*
shall
assure process compatibility up to and
°
°
°
For example 260 C+0 C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
Copyright ã ANPEC Electronics Corp.
10
www.anpec.com.tw
Rev. B.3 - Jun., 2005
APM2800B
Carrier Tape & Reel Dimensions
T2
J
C
A
B
T1
A
B
C
J
T1
T2
W
P
E
Application
SOT-23-5
8.0+ 0.3
- 0.3
178 1
72 1.0 13.0 + 0.2 2.5 0.15 8.4
2
1.5 0.3
4
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
SOT-23-5
Carrier Width
Cover Tape Width
Devices Per Reel
8
5.3
3000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.3 - Jun., 2005
11
www.anpec.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明