AOD4191L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD4191L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4191L
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4191 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. The device well suited for high current
applications.
VDS (V) = -40V
ID = -34A
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
RDS(ON) < 25mΩ
RDS(ON) < 34mΩ
100% UIS Tested!
100% R g Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Bottom View
Top View
D
S
D
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-40
±20
-34
V
Gate-Source Voltage
Continuous Drain
Current B
VGS
V
TC=25°C
TC=100°C
ID
-24
Pulsed Drain Current C
Continuous Drain
Current A
IDM
-70
A
TC=25°C
-7
TC=100°C
ID
-6
Avalanche Current C
IAR
EAR
-31
A
Repetitive avalanche energy L=0.1mHC
48
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
2.5
PDSM
W
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-CaseB
Steady-State
Steady-State
RθJC
2.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
V
DS=-40V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
V
DS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VDS=VGS ID=-250µA
VGS(th)
ID(ON)
-1.7
-70
-1.9
VGS=-10V, VDS=-5V
A
V
GS=-10V, ID=-12A
20.5
31
25
38
34
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-8A
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
27
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
-0.74
-1
V
Maximum Body-Diode Continuous Current
-45
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1200 1440 1750
pF
pF
pF
Ω
V
V
GS=0V, VDS=-20V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
125
90
2
160
125
5
200
175
10
SWITCHING PARAMETERS
Qg(-10V) Total Gate Charge
Qg(-4.5V) Total Gate Charge
24
11
29
14
35
17
nC
nC
nC
nC
ns
VGS=-10V, VDS=-20V, ID=-12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.5
4.5
4.3
6.7
9.6
16.8
38
5.5
9.4
V
GS=-10V, VDS=-20V, RL=1.6Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
22
ns
trr
IF=-12A, dI/dt=500A/µs
IF=-12A, dI/dt=500A/µs
15
56
18
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
22
82
ns
Qrr
68
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 1 : Oct-2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
50
40
30
20
10
0
-6V
-5V
VDS=-5V
-10V
-4.5V
-4V
125°C
-3.5V
25°C
VGS=-3V
0
1
2
3
4
5
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
40
2
VGS=-10V
ID=-12A
1.8
1.6
1.4
1.2
1
35
30
25
20
15
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-8A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
75
60
45
30
15
0
100
10
1
ID=-12A
125°C
0.1
125°C
25°C
0.01
0.001
25°C
0.0001
0.00001
0.000001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2200
2000
1800
1600
1400
1200
1000
800
100µs
VDS=-20V
ID=-12A
8
Ciss
6
4
600
Crss
2
Coss
400
200
0
0
0
5
10
15
-Qg (nC)
20
25
30
0
5
10
15
20
25
30
35
40
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
160
120
80
10µs
RDS(ON)
TJ(Max)=175°C
TC=25°C
100µs
limited
DC
1ms
10ms
40
TJ(Max)=175°C, TC=25°C
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
40
30
20
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
10
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
T
CASE (°C)
Figure 13: Power De-rating (Note F)
60
40
35
30
25
20
15
10
5
TA=25°C
50
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4191L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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