AO3702L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3702L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = 20V
The AO3702/L uses advanced trench technology to provide
excellent RDS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
ID = 3.5A (VGS = 4.5V)
RDS(ON) < 62mΩ (VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
-AO3702L is Halogen Free
D
SOT-23-5
Top View
K
D
K
G
S
A
1
2
3
5
4
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
20
V
V
VGS
±8
TA=25°C
TA=70°C
3.5
ID
A
Continuous Drain Current
A
2.7
25
B
IDM
Pulsed Drain Current
VKA
Schottky reverse voltage
20
1
V
A
TA=25°C
TA=70°C
IF
IFM
A
Continuous Forward Current
0.5
10
B
Pulsed Forward Current
TA=25°C
TA=70°C
1.15
0.7
0.66
0.42
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
80.3
110
RθJA
A
Steady-State
Steady-State
°C/W
°C/W
117
43
150
80
C
RθJL
Maximum Junction-to-Lead
Thermal Characteristics Schottky
A
t ≤ 10s
Maximum Junction-to-Ambient
153
190
RθJA
RθJL
A
Steady-State
Steady-State
Maximum Junction-to-Ambient
173
103
220
140
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
VDS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±8V
±100
1
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3.5A
0.5
25
0.68
A
50
70
56
66
15
0.7
62
90
70
85
mΩ
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
V
V
GS=2.5V, ID=3A
GS=1.8V, ID=2.5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=2A
IS=1A,VGS=0V
S
V
A
1
Maximum Body-Diode Continuous Current
1.6
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
260
48
27
3
320
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
4.5
3.8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
2.9
0.4
0.6
2.5
3.2
21
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=10V, ID=3.5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=4.5V, VDS=10V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
3
IF=3.5A, dI/dt=100A/µs
IF=3.5A, dI/dt=100A/µs
trr
14
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
3.4
nC
SCHOTTKY PARAMETERS
VF
Irm
CT
Forward Voltage Drop
IF=0.5A
0.37
52
0.5
0.1
20
V
VR=16V
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
Junction Capacitance
VR=10V
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
trr
9.2
1.7
12
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
nC
Qrr
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
rating.
≤ 10s thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev1:March 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
25
20
15
10
5
4.5V
2.5V
2V
VGS=1.5V
4
125°C
1
25°C
0
0
0
1
2
3
4
5
0
0.5
1.5
2
2.5
3
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
120
100
80
1.60E+00
1.40E+00
1.20E+00
1.00E+00
8.00E-01
VGS=1.8V
ID=2.5A
VGS=2.5V
ID=3A
VGS=4.5V
ID=3.5A
VGS=1.8V
VGS=2.5V
60
VGS=4.5V
40
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
Temperature (°C)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
120
100
80
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=3.5A
125°C
25°C
125°C
25°C
60
40
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1
2
3
4
5
6
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
300
250
200
150
100
50
5
4
3
2
1
0
VDS=10V
ID=3.5A
Ciss
Coss
Crss
0
0
0.5
1
1.5
Qg (nC)
2
2.5
3
3.5
0
5
10
15
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
16
12
8
RDS(ON)
10us
limited
100us
1ms
10s
4
10ms
100ms
DC
1
1s
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
200
160
120
80
10
1
125°C
f=1MHz
0.1
0.01
0.001
40
25°C
0.4
0
0.0
0.2
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
VF (Volts)
VKA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.4
0.3
0.2
0.1
IF=1A
VR=20V
IF=0.5A
VR=16V
75
0
25
50
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Figure 15: Schottky Leakage current vs. Junction
Temperature
10.000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=220°C/W
1.000
0.100
0.010
0.001
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
1
10
100
1000
10000
Alpha & Omega Semiconductor, Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明