AO8806_07 [AOS]
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; 常见的漏双N沟道增强型场效应晶体管
| 型号： | AO8806_07 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO8806
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8806 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO8806 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = 20V
ID = 7 A (VGS = 4.5V)
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 2.5V)
RDS(ON) < 35mΩ (VGS = 1.8V)
D1
D2
TSSOP-8
Top View
1
2
3
4
8
7
6
5
D1/D2
S1
D1/D2
S2
S2
S1
G1
G1
G2
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±8
V
A
TA=25°C
TA=70°C
7
ID
5.7
Pulsed Drain Current B
IDM
30
1.5
TA=25°C
TA=70°C
PD
W
Power Dissipation A
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
64
Max
83
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
89
120
70
RθJL
53
Alpha & Omega Semiconductor, Ltd.
AO8806
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
VDS=16V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
µA
µA
V
DS=0V, VGS=±4.5V
±1
±10
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=7A
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
0.4
30
0.6
V
A
16.5
23
22
29
27
35
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
GS=2.5V, ID=5.5A
20
VGS=1.8V, ID=5A
VDS=5V, ID=7A
IS=1A,VGS=0V
24
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
29
S
V
A
0.76
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1160
187
146
1.5
pF
pF
pF
Ω
V
V
GS=0V, VDS=10V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
16
0.8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=10V, ID=7A
3.8
6.2
V
GS=5V, VDS=10V, RL=1.35Ω,
12.7
51.7
16
RGEN=3Ω
tD(off)
tf
trr
IF=7A, dI/dt=100A/µs
IF=7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17.7
6.7
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
20
10
0
8V
VGS=5V
VGS =2V
15
10
5
VGS =1.5V
125°C
VGS =1V
25°C
0
0
1
2
3
4
5
0.0
0.5
1.0
GS(Volts)
Figure 2: Transfer Characteristics
1.5
2.0
2.5
V
DS(Volts)
V
Figure 1: On-Regions Characteristics
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
ID=6.5A
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS =1.8V
VGS =2.5V
VGS =4.5V
0
5
10
15
20
0
25
50
75
100
125
150
175
ID(A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
50
40
30
20
10
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
ID=6.5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
V
V
GS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
5
VDS=10V
ID=7A
1600
1200
800
400
0
4
3
2
1
0
Ciss
Crss
Coss
0
5
10
15
20
0
5
10
15
20
VDS(Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
1
0.1
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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