AOB480L [AOS]
80V N-Channel MOSFET; 80V N沟道MOSFET
| 型号： | AOB480L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 80V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT480L/AOB480L
80V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOT480L & AOB480L is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with
low gate charge & low Qrr.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
VDS
80V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
180A
< 4.5mΩ
< 5.5mΩ
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
G
D
D
S
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
80
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±25
TC=25°C
180
Continuous Drain
Current G
ID
TC=100°C
134
A
Pulsed Drain Current C
IDM
500
15
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
12
IAS,IAR
90
A
EAS,EAR
405
mJ
TC=25°C
Power Dissipation B
TC=100°C
333
PD
W
167
TA=25°C
1.9
PDSM
W
°C
Power Dissipation A
1.2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
54
65
RθJC
0.35
0.45
Rev1: April 2010
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Page 1 of 7
AOT480L/AOB480L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
80
V
VDS=80V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±25V
VDS=5V ,ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
4
nA
V
VGS(th)
ID(ON)
2
2.8
500
A
3.7
6.1
4.5
7.3
mΩ
TJ=125°C
VGS=7V, ID=20A
TO220
4.2
3.4
5.5
4.2
5.2
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
VGS=7V, ID=20A
TO263
3.9
60
mΩ
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
IS=1A,VGS=0V
0.6
1
V
A
Maximum Body-Diode Continuous Current
180
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5200 6520 7820
pF
pF
pF
Ω
VGS=0V, VDS=40V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
570
185
0.3
810
310
0.64
1060
430
1
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=40V, ID=20A
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
92
24
23
116
30
140
36
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
38
53
31.5
33
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
tD(off)
tf
46
17.5
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
90
28
36
ns
Qrr
nC
132
170
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: April 2010
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Page 2 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
180
VDS=5V
6.5V
7V
10V
6V
150
120
90
60
30
0
5.5V
5V
25°C
125°C
40
VGS=4.5V
0
2
3
4
5
6
7
0
1
2
3
4
5
VDS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
7
6
5
4
3
2
2.2
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=7V
=7V
VGS
ID=20A
VGS=10V
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
9
8
7
6
5
4
3
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev1: April 2010
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Page 3 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
9000
10
VDS=20V
ID=20A
8000
7000
6000
5000
4000
3000
2000
1000
0
Ciss
8
6
4
2
Coss
Crss
0
0
20
40
DS (Volts)
60
80
0
20
40
60
g (nC)
80
100
120
Q
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
5000
4000
3000
2000
1000
0
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
TJ(Max)=175°C
TC=25°C
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
1E-05 0.0001 0.001 0.01
0.1
10
1
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev1: April 2010
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Page 4 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10.0
360
320
280
240
200
160
120
80
TA=25°C
TA=100°C
TA=150°C
TA=125°C
40
0
0
25
50
75
100
125
150
175
1
10
100
1000
Time in avalanche, tA (µs)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
1000
100
10
200
160
120
80
TA=25°C
40
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
1
0.0001
0.01
1
100
10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
0.1
PD
0.01
0.001
Ton
Single Pulse
T
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev1: April 2010
www.aosmd.com
Page 5 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
200
160
120
80
50
42
34
26
18
10
2
36
32
28
24
20
16
12
8
1.5
di/dt=800A/µs
125ºC
25ºC
di/dt=800A/µs
125ºC
1
trr
Qrr
25ºC
25ºC
S
125ºC
25ºC
0.5
0
Irm
125ºC
4
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IS (A)
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
240
40
30
20
10
0
50
40
30
20
10
0
2
Is=20A
Is=20A
200
160
120
80
125ºC
125ºC
25ºC
1.5
1
trr
25ºC
125ºC
25ºC
Qrr
25ºC
S
0.5
0
40
Irm
125º
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev1: April 2010
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Page 6 of 7
AOT480L/AOB480L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev1: April 2010
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Page 7 of 7
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