AOD4136 [AOS]
N-Channel SDMOSTM POWER Transistor; N沟道SDMOSTM功率晶体管
| 型号： | AOD4136 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel SDMOSTM POWER Transistor |
| 文件： | 总6页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4136
N-Channel SDMOSTM POWER Transistor
General Description
Features
The AOD4136 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for both DC-DC and load
switch applications.
VDS (V) = 25V
ID = 25A
(VGS = 10V)
RDS(ON) < 11mΩ (VGS = 10V)
RDS(ON) <19mΩ (VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
D
Bottom View
Top View
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain Current C
Avalanche Current C
VGS
±20
25
V
TC=25°C
TC=100°C
ID
20
A
IDM
IAR
EAR
100
17
Repetitive avalanche energy L=0.1mH C
15
mJ
W
°C
TC=25°C
30
PD
Power Dissipation B
TC=100°C
15
TA=25°C
2.1
PDSM
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
17.4
50
Max
25
60
5
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case F
Steady-State
Steady-State
RθJC
4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4136
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
25
V
VDS=25V, VGS=0V
10
100
±100
2.5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
nA
V
VGS(th)
ID(ON)
1.5
1.9
100
A
V
GS=10V, ID=20A
9
13
11
16
19
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
V
GS=4.5V, ID=15A
15
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
32
S
V
A
0.71
1
Maximum Body-Diode Continuous Current
20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
734
174
97
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
2.4
3.6
5.4
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
12.9
6.2
2.2
4
16.8
8.1
nC
nC
nC
nC
ns
VGS=10V, VDS=12.5V,
ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
V
GS=10V, VDS=12.5V, RL=0.5Ω,
11.2
19.6
9.6
12
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
16
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
11
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4136
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
80
60
40
20
0
VDS=5V
10V
6.0V
4.5V
4.0V
`
125°C
VGS=3.5V
25°C
0
1
2
3
4
5
1
2
3
4
5
VDS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
18
1.6
1.4
1.2
1
VGS=10V
ID=20A
16
14
12
10
8
VGS=4.5V
VGS=4.5V
ID=15A
VGS=10V
0.8
6
25
50
75
100
125
150
175
200
0
5
10
15
20
25
30
Temperature (°C)
I
D (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
40
35
30
25
20
15
10
5
ID=20A
10
1
0.1
125°C
0.01
125°C
25°C
0.001
0.0001
0.00001
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4136
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
VDS=12.5V
ID=20A
1000
800
600
400
200
0
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
10000
1000
100
1000
100
10
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
100ms
1
DC
TJ(Max)=175°C
TC=25°C
0.1
10
0.1
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4136
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
25
50
75
CASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
T
T
CASE (°C)
Figure 13: Current De-rating (Note B)
1000
100
10
TJ(Max)=150°C
TA=25°C
1
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=60°C/W
Ton
T
Single Pulse
0.0001
R
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4136
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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