AOD446_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD446_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
VDSꢀ(V)ꢀ=ꢀ75V
TheꢀAOD446ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload
switchingꢀandꢀgeneralꢀpurposeꢀapplications.
IDꢀ=ꢀ10ꢀAꢀ(VGSꢀ=ꢀ20V)
RDS(ON)ꢀ<ꢀ130ꢀmΩꢀ(VGSꢀ=ꢀ20V)
R
DS(ON)ꢀ<ꢀ140ꢀmΩꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<ꢀ165ꢀmΩꢀ(VGSꢀ=ꢀ4.5V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
75
V
GateꢁSourceꢀVoltage
VGS
±25
10
V
A
TC=25°C
ContinuousꢀDrain
CurrentꢀG
TC=100°C
ID
10
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC
IDM
IAR
EAR
20
10
A
15
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
20
PD
W
10
TA=25°C
2.1
PDSM
W
PowerꢀDissipationꢀA
1.3
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.4
50
Max
30
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁCaseꢀB
SteadyꢁState
SteadyꢁState
60
RθJC
4
7.5
Alpha & Omega Semiconductor, Ltd.
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AOD446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=10mA,ꢀVGS=0V
VDS=60V,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
75
V
1
5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
VDS=0V,ꢀVGS=±20V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
3
nA
V
VDS=VGS,ꢀꢀID=250µA
VGS(th)
ID(ON)
1
2.4
V
GS=10V,ꢀVDS=5V
20
A
VGS=20V,ꢀID=5A
100
180
105
120
9
130
220
140
165
mΩ
TJ=125°C
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
VGS=10V,ꢀID=5A
VGS=4.5V,ꢀID=2A
mΩ
mΩ
S
V
DS=5V,ꢀID=10A
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
IS=1A,ꢀVGS=0V
0.79
1
V
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
10
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
293
51
350
3
pF
pF
pF
Ω
VGS=0V,ꢀVDS=30V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
20
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
2.2
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
5.2
2.46
1
6.5
3.5
nC
nC
nC
nC
ns
Qg(4.5V) TotalꢀGateꢀCharge
VGS=10V,ꢀVDS=37.5V,ꢀID=5A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
1.34
4.6
2.3
14.7
1.7
25
V
GS=10V,ꢀVDS=37.5V,ꢀRL=7.5Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=5A,ꢀdI/dt=100A/µs
IF=5A,ꢀdI/dt=100A/µs
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
30
ns
Qrr
27
nC
A:ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1inꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.ꢀThe
PowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀaꢀgivenꢀapplicationꢀdepends
onꢀtheꢀuser'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀfoꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀ µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT A=25°C.ꢀTheꢀSOA
curveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1STꢀ2008).
Rev3:ꢀSepꢀ2008
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
10
8
10V
VDS=5V
7V
6V
5V
6
125°C
4.5V
4
VGS=4V
25°C
2
3.5V
0
0
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
0
1
2
3
4
5
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
220
200
180
160
140
120
100
80
2.2
2
VGS=20V,ꢀ5A
VGS=10V,ꢀ5A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5V,ꢀ2A
VGS=10V
VGS=20V
0.8
0
2
4
6
8
10
I
D (A)
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
260
240
220
200
180
160
140
120
100
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
1.0Eꢁ03
1.0Eꢁ04
1.0Eꢁ05
ID=5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
350
300
250
200
150
100
50
VDS=37.5V
ID=5A
Ciss
8
6
4
Coss
2
Crss
0
0
0
5
10
15
DS (Volts)
20
25
30
0
2
4
6
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
TJ(Max)=175°C,ꢀTC=25°C
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
100µs
1ms
10ms
DC
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Inꢀdescendingꢀorder
D=Ton/T
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
1
PD
0.1
Ton
T
SingleꢀPulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
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AOD446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
25
20
15
10
5
L ID
tA
=
BV −VDD
6
4
TA=25°C
2
0
0
0
25
50
75
100
125
150
175
0.00001
0.0001
0.001
TCASE (°C)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
50
12
10
8
TA=25°C
40
30
20
10
0
6
4
2
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
SingleꢀPulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD446
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
EAꢀꢀRꢀ=ꢀ1/2ꢀLIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
ꢁ
Vds
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