AOD450 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD450 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD450
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD450 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in inverter, load
switching and general purpose applications. Standard
product AOD450 is Pb-free (meets ROHS & Sony
259 specifications). AOD450L is a Green Product
ordering option. AOD450 and AOD450L are
electrically identical.
VDS (V) = 200V
ID = 3.8A
RDS(ON) <0.7Ω (VGS = 10V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±30
V
A
TC=25°C
3.8
Continuous Drain
Current
TC=100°C
ID
2.7
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=1.35mH C
IDM
IAR
EAR
10
3
6
A
mJ
TC=25°C
25
PD
W
Power Dissipation B
TC=100°C
12.5
2.1
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.1
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
30
60
6
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
RθJC
4
Alpha & Omega Semiconductor, Ltd.
AOD450
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=160V, VGS=0V
200
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±30V
VDS=VGS, ID=250µA
VGS=10V, VDS=15V
100
6
nA
V
VGS(th)
ID(ON)
3
5
10
A
VGS=10V, ID=3.8A
0.55
1.1
8.7
0.8
0.70
1.32
RDS(ON)
Static Drain-Source On-Resistance
Ω
TJ=125°C
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=15V, ID=3.8A
S
V
A
IS=1A, VGS=0V
Maximum Body-Diode Continuous CurrentG
1
6
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
215
32
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
7.2
5.5
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.82
0.92
1.42
1.47
6.3
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=25V, ID=3.8A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=25V, RL=6.5Ω,
RGEN=3Ω
3.3
ns
tD(off)
tf
10.5
2.8
ns
ns
trr
IF=3.8A, dI/dt=100A/µs
IF=3.8A, dI/dt=100A/µs
59
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
142
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Feb 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD450
TYPICAL ELECTRICAL CHARACTERISTICS
14
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
12
VDS=15V
10V
10
8
6
4
2
0
8V
125°C
25°C
7V
VGS=6V
15
0
5
10
20
2
4
6
8
10
VDS(Volts)
VGS(Volts)
Figure 1:On-Region Characteristics
Figure 2: Transfer Characteristics
800
700
600
500
400
300
200
2.4
2.2
2
VGS=10V
VGS=10V, 3.8A
1.8
1.6
1.4
1.2
1
0.8
0
0
1
2
3
4
5
6
7
25
50
75
100
125
150
175
I
D (A)
Temperature(°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1400
1200
1.0E+01
ID=3.8A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
1000
800
600
400
200
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
6
8
10
12
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
14
16
18
20
V
Alpha & Omega Semiconductor, Ltd.
AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
250
200
150
100
50
10
8
VDS=10V
ID=3.8A
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
0
5
10
15
DS (Volts)
20
25
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
200
TJ(Max)=175°C, TC=25°C
160
120
80
40
0
TJ(max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µ
1ms
DC
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=6°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
5
4
3
2
1
TA=25°C
0
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
40
30
20
10
0
5
4
3
2
1
0
TA=25°C
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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