AOD448 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD448 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD448
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD448 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD448 is Pb-free (meets ROHS & Sony
259 specifications). AOD448L is a Green Product
ordering option. AOD448 and AOD448L are
electrically identical.
VDS (V) = 30V
ID = 75A
(VGS = 10V)
RDS(ON) < 5mΩ (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
V
A
TC=25°C
75
TC=100°C
ID
56
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
200
30
A
45
mJ
TC=25°C
50
PD
W
Power Dissipation B
TC=100°C
25
6.3
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
4
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16.2
44
Max
20
55
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
RθJC
2
Alpha & Omega Semiconductor, Ltd.
AOD448
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
0.025
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1
1.5
VGS=10V, VDS=5V
100
A
V
GS=10V, ID=30A
4.1
5
5
6
9
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
7
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
40
S
V
A
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2342 2810
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
462
320
VGS=0V, VDS=0V, f=1MHz
1.1
1.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
70
34.8
13.1
18.5
9
84
42
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
11
ns
R
GEN=3Ω
tD(off)
tf
30.7
9.2
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
34.5
28.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
42
34
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
5V
VDS=5V
4.5V
10V
4V
125°C
25°C
3.5V
VGS=3V
4
2
2.5
3
3.5
GS(Volts)
4
4.5
0
1
2
3
5
V
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
12
10
8
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=10V
VGS=4.5V
ID=20A
4
2
0.8
0
10
20
30
ID (A)
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
12
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
4
0
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
3600
3200
2800
2400
2000
1600
1200
800
10
VDS=15V
ID=20A
Ciss
8
6
Coss
4
Crss
2
400
0
0
0
10
20
30
Q
40
g (nC)
50
60
70
0
5
10
15
DS (Volts)
20
25
30
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
RDS(ON)
TJ(Max)=175°C, TA=25°C
limited
TJ(Max)=175°C
TA=25°C
1µs
10µs
100µs
DC
1ms
10ms
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
L ⋅ ID
tA
=
BV −VDD
TA=25°C
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
100
75
50
25
0
TA=25°C
40
30
20
10
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
T
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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