AOD452L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD452L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD452
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
Product ordering option. AOD452 and AOD452L are
electrically identical.
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
55
V
A
TC=25°C
TC=100°C
ID
55
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
100
30
A
135
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TA=25°C
3
PDSM
W
Power Dissipation A
TA=70°C
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
14.2
39
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
RθJC
2.5
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=20V, VGS=0V
25
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1
1.8
VGS=10V, VDS=5V
100
A
V
GS=10V, ID=30A
6.5
9.7
8.5
12
14
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=10A
IS=1A, VGS=0V
11.5
35
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.72
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1230 1476
pF
pF
pF
Ω
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
315
190
1.2
2
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
26.4
13.5
3.9
32
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=12.5V, ID=20A
7.75
6.5
VGS=10V, VDS=12.5V, RL=0.6Ω,
10
ns
R
GEN=3Ω
tD(off)
tf
22.7
6.2
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
23.06
15.25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27.5
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
5V
VDS=5V
4.5V
6V
7V
VGS=4V
125°C
25°C
3.5V
3V
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
18
16
14
12
10
8
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V, 20A
VGS=10V
6
VGS=4.5V, 20A
4
2
0
0.8
0
10
20
30
D (A)
40
50
60
I
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
1800
1600
1400
1200
1000
800
VDS=12.5V
ID=20A
Ciss
8
6
4
Coss
600
400
2
200
Crss
0
0
0
5
10
15
20
25
0
5
10
15
g (nC)
20
25
30
Q
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C, TA=25°C
RDS(ON)
limited
10µs
TJ(Max)=175°C
TA=25°C
100µs
1ms
10ms
DC
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
60
50
40
30
20
10
0
L ⋅ ID
tA
=
BV −VDD
TA=25°C
0
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
60
50
40
30
20
10
0
TA=25°C
40
30
20
10
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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