AOD454A [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD454A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD454A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD454A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
VDS (V) = 40V
ID = 12A
(VGS = 10V)
RDS(ON) < 30mΩ (VGS = 10V)
DS(ON) < 40mΩ (VGS = 4.5V)
R
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Bottom View
Top View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
40
±20
12
V
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain CurrentC
Avalanche Current C
VGS
V
TC=25°C
TC=100°C
ID
10
A
IDM
IAR
EAR
40
14
Repetitive avalanche energy L=0.1mHC
9.8
mJ
W
°C
TC=25°C
37
PD
Power Dissipation B
TC=100°C
18
TA=25°C
2.5
PDSM
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
4
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case F
Steady-State
Steady-State
RθJC
3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
V
DS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
DS=VGS ID=250µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
nA
V
V
VGS(th)
ID(ON)
1.7
40
2.5
VGS=10V, VDS=5V
VGS=10V, ID=12A
A
24
37
30
46
40
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=4.5V, ID=8A
VDS=5V, ID=12A
IS=1A,VGS=0V
30
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
25
S
V
A
0.76
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
516
82
650
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
43
VGS=0V, VDS=0V, f=1MHz
4.6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.3
2.3
1.6
6.4
3.6
16.2
6.6
18
10.8
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=20V,
ID=12A
V
GS=10V, VDS=20V, RL=1.6Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
24
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
10
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev2: Oct 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
40
30
20
10
0
VDS=5V
10V
4.0V
4.5V
4.0V
125°C
3.5V
25°C
4
VGS=3.0V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4.5
5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
38
36
34
32
30
28
26
24
22
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=12A
VGS=4.5V
VGS=4.5V
ID=8A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
80
70
60
50
40
30
20
10
100
10
ID=12A
1
0.1
125°
125°C
25°C
0.01
25°C
0.001
0.0001
0.00001
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
3
4
5
6
7
8
9
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
10
8
Ciss
VDS=20V
ID=12A
Coss
6
4
Crss
2
0
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
10000
1000
100
100
TJ(Max)=175°C
TC=25°C
10µs
10
1
RDS(ON)
limited
1ms
10ms
100ms
DC
TJ(Max)=175°C
TC=25°C
0.1
10
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
J,PK=Tc+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
50
40
30
20
10
0
0
25
50
75
TCASE (°C)
Figure 12: Power De-rating (Note B)
100
125
150
175
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
TJ(Max)=150°C
TA=25°C
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
T
Ton
10
T
Single Pulse
0.0001
0.001
0.00001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD454A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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