AOD607L [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AOD607L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD607
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOD607 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AOD607 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD607L is a Green Product ordering option.
AOD607 and AOD607L are electrically
identical.
n-channel
p-channel
-30V
-12A (VGS = -10V)
VDS (V) = 30V
ID = 12A (VGS=10V)
RDS(ON)
RDS(ON)
< 25 mΩ (VGS=10V)
< 34 mΩ (VGS=4.5V)
< 37 mΩ (VGS = -10V)
< 62 mΩ (VGS = -4.5V)
TO-252-4L
D-PAK
D1/D2
D1/D2
Top View
Drain Connected to
Tab
G1
S1
G2
S2
n-channel
p-channel
S1 G1
S2 G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
30
±20
12
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
-12
V
A
TC=25°C
TC=100°C
ID
12
-12
C
Pulsed Drain Current
IDM
IAR
EAR
40
-40
C
Avalanche Current
18
-18
A
C
Repetitive avalanche energy L=0.1mH
40
40
mJ
TC=25°C
25
25
PD
W
B
Power Dissipation
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
12.5
2.1
12.5
2.1
PDSM
W
A
1.3
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
-55 to 175
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Symbol
Device Typ
Max
23
60
6
A
t ≤ 10s
n-ch
n-ch
n-ch
19
47
4.5
°C/W
°C/W
°C/W
RθJA
RθJC
RθJA
RθJC
A
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
B
Maximum Junction-to-Case
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
p-ch
p-ch
p-ch
19
47
4.5
23
60
6
°C/W
°C/W
°C/W
B
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
AOD607
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.7
VGS=4.5V, VDS=5V
40
A
V
GS=10V, ID=12A
20
28
25
34
34
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=5A
VDS=5V, ID=12A
IS=1A,VGS=0V
27.5
25
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
V
Maximum Body-Diode Continuous Current
18
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
180
110
0.7
1250
1.5
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19.8
9.8
2.5
3.5
4.5
3.9
17.4
3.2
19
25
nC
nC
nC
nC
ns
Qg(4.5V)
12.5
VGS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=1.25Ω,
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 0: March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
4V
10V
4.5V
VDS=5V
3.5V
125°C
25°C
VGS=3V
4
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
35
1.6
VGS=10V
ID=12A
VGS=4.5V
30
25
20
15
10
1.4
1.2
1
VGS=4.5V
ID=5A
VGS=10V
0
5
10
15
20
0.8
I
D (A)
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
30
20
10
ID=12A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD607
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=15V
ID=12A
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
VDS (Volts)
20
25
30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
1ms
10µs
40
30
20
10
0
10ms
100µs
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
AOD607
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-0.003
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.2
-40
-2
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
A
30
42
37
50
62
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
50
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=-5V, ID=-12A
17
S
V
A
IS=-1A,VGS=0V
-0.76
-1
Maximum Body-Diode Continuous Current
-18
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
920
190
122
3.6
1100
5
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
18.7
9.7
2.54
5.4
9
23
nC
nC
nC
nC
ns
11.7
V
GS=-10V, VDS=-15V, ID=-12A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13
35
30
18
VGS=-10V, VDS=-15V,
25
ns
RL=1.25Ω, RGEN=3Ω
20
ns
12
ns
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
trr
21.4
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
26
16
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev0 : March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-6V
-5V
-10V
VDS=-5V
-4V
-3.5V
125°C
VGS=-3V
3
25°C
3.5
0
0
0
1
2
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
80
1.60
1.40
1.20
1.00
0.80
70
60
50
40
30
20
10
VGS=-4.5V
ID=-5A
VGS=-4.5V
VGS=-10V
ID=-12A
VGS=-10V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-12A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD607
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-12A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
-Qg (nC)
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
DC
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
0.1
PD
Ton
10
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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