AOD7N60 [FREESCALE]
600V,7A N-Channel MOSFET; 600V ，7A N沟道MOSFET
| 型号： | AOD7N60 |
| 厂家： | 
Freescale |
| 描述： | 600V,7A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
General Description
The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.
guaranteed avalanche capability these parts can be
By providing low RDS(on), Ciss and Crss along with
designs.
adopted quickly into new and existing offline power supply
Features
VDS
700V@150℃
7A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.3Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
7
V
A
TC=25°C
Continuous Drain
CurrentB
ID
TC=100°C
4.5
Pulsed Drain Current C
IDM
24
3.6
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
194
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
388
mJ
V/ns
W
W/ oC
5
178
PD
Power Dissipation B
Derate above 25oC
1.4
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
45
-
55
0.5
0.7
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
0.5
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AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.67
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=3.5A
VDS=40V, ID=3.5A
IS=1A,VGS=0V
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3.3
3.9
1.1
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.3
Ω
S
7.5
VSD
0.72
1
7
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
24
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
780
60
4
975
88
1170
115
11
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
7.3
3.2
V
1.5
5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
15
19.3
4.6
6.9
25
24
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=7A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=300V, ID=7A,
Turn-On Rise Time
37
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
58
Turn-Off Fall Time
33
trr
IF=7A,dI/dt=100A/µs,VDS=100V
IF=7A,dI/dt=100A/µs,VDS=100V
300
3.4
388
4.4
470
5.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.6A, VDD=150V, RG=10Ω, Starting TJ=25°C
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AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
10
8
100
10
1
10V
VDS=40V
-55°C
6V
5.5V
125°C
6
4
5V
VGS=4.5V
25
25°C
2
0
0.1
0
5
10
15
20
30
2
4
6
8
10
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
2.4
2.1
1.8
1.5
1.2
0.9
0.6
3
2.5
2
VGS=10V
ID=3.5A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
3
6
9
12
15
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125°C
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
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AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=480V
ID=3.5A
Ciss
Coss
6
Crss
3
0
1
0
5
10
15
20
25
30
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
800
600
400
200
0
100
10
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
1
DC
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.7°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
8
6
4
2
0
40
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note B)
TCASE (°C)
Figure 13: Current De-rating (Note B)
400
TJ(Max)=150°C
TA=25°C
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
1
0.1
PD
0.01
Ton
Single Pulse
0.001
T
0.001
1E-05
0.0001
0.01
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
0.1
1
10
100
1000
5/6
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AOD7N60/AOI7N60
600V,7A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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