AOD6N50 [AOS]
500V,5.3A N-Channel MOSFET; 500V ， 5.3A N沟道MOSFET
| 型号： | AOD6N50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V,5.3A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：495K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD6N50
500V,5.3A N-Channel MOSFET
General Description
Product Summary
The AOD6N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
600V@150℃
5.3A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.4Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
500
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±30
TC=25°C
5.3
Continuous Drain
CurrentB
ID
TC=100°C
3.3
A
Pulsed Drain Current C
IDM
17
2.8
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
118
mJ
Single plused avalanche energy H
Peak diode recovery dv/dt
TC=25°C
235
mJ
V/ns
W
W/ oC
5
104
PD
Power Dissipation B
Derate above 25oC
0.83
-50 to 150
Junction and Storage Temperature Range
TJ, TSTG
TL
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Parameter
Symbol
RθJA
Typical
Maximum
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
43
-
55
0.5
1.2
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
RθCS
RθJC
1
Rev0: April 2012
Page 1 of 6
AOD6N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
0.6
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=500V, VGS=0V
1
IDSS
µA
10
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
VGS=10V, ID=2.5A
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3.4
4.1
1.2
5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.4
Ω
S
VDS=40V, ID=2.5A
IS=1A,VGS=0V
VSD
0.76
5
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
17
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
430
40
538
58
670
80
7
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2.5
1.2
4.5
2.3
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=400V, ID=5A
3.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
9
3
2
11.5
3.8
4.1
18
14
4.6
6.2
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=250V, ID=5A,
Turn-On Rise Time
32
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
34
Turn-Off Fall Time
22
trr
IF=5A,dI/dt=100A/µs,VDS=100V
IF=5A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
145
1.7
182
2.2
220
2.7
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: April 2012
www.aosmd.com
Page 2 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
100
10
1
10V
VDS=40V
-55°C
6.5V
6
125°C
6V
4
VGS=5.5V
2
25°C
0.1
0
2
4
6
8
10
0
5
10
15
20
25
30
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
3
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2
VGS=10V
ID=2.5A
VGS=10V
1.5
1
0.5
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
12
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
1.2
1.0E+02
1.0E+01
125°C
1.1
1
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
100
150
200
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Rev0: April 2012
www.aosmd.com
Page 3 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=2.5A
Ciss
Coss
6
Crss
3
0
1
0
3
6
9
12
15
18
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
1000
800
600
400
200
0
10µs
10
1
TJ(Max)=150°C
TC=25°C
RDS(ON)
limited
100µs
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.01
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.2°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
Pulse Width (s)
0.01
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: April 2012
www.aosmd.com
Page 4 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
6
5
4
3
2
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note B)
Figure 13: Current De-rating (Note B)
500
400
300
200
100
0
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: April 2012
www.aosmd.com
Page 5 of 6
AOD6N50
Gate Charge Test Circuit &Waveform
Vgss
Qgg
10V
+
VDC
+
Vdds
Q
g
s
Qggd
VDCC
-
-
DUTT
Vgss
Igg
Chharge
Resistive Switching Test Circuit & Waveforms
RL
Vdds
Vdds
90%
10%
+
Vddd
DUUT
Vgss
VDCC
Rgg
-
Vgss
Vgss
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev0: April 2012
www.aosmd.com
Page 6 of 6
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