AOI418 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOI418 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD418/AOI418
30V N-Channel MOSFET
General Description
Product Summary
VDS
The AOD418/AOI418 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
30V
36A
ID (at VGS= 10V)
< 7.5mΩ
< 11mΩ
RDS(ON) (at VGS= 10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO251A
IPAK
D
Top View
Bottom View
Bottom View
Top View
D
D
G
S
G
G
S
S
D
D
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
V
V
VGS
ID
IDM
IDSM
±20
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
36
28
TC=100°C
A
Pulsed Drain Current C
125
13.5
10.5
27
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
IAS, IAR
A
EAS, EAR
36
mJ
TC=25°C
50
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
25
2.5
PDSM
W
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
41
Steady-State
Steady-State
RθJC
2.5
Rev 0: February 2011
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Page 1 of 6
AOD418/AOI418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
DS=VGS ID=250µA
±100
2.5
nA
V
VGS(th)
ID(ON)
V
1.5
1.95
VGS=10V, VDS=5V
VGS=10V, ID=20A
125
A
6.2
9.5
7.5
mΩ
mΩ
mΩ
mΩ
TJ=125°C
TO252
11.5
VGS=4.5V, ID=20A
TO252
8.5
6.7
9
11
8
RDS(ON)
Static Drain-Source On-Resistance
V
GS=10V, ID=20A
TO251A
VGS=4.5V, ID=20A
TO251A
11.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=5V, ID=20A
63
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.72
1
36
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
920
125
60
1150 1380
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
180
105
1.1
235
150
1.65
VGS=0V, VDS=0V, f=1MHz
0.55
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
16
20
9.5
2.7
5
24
11
nC
Total Gate Charge
7.6
V
GS=10V, VDS=15V, ID=20A
Gate Source Charge
nC
nC
ns
ns
ns
ns
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
6.5
2
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
R
Turn-Off DelayTime
17
Turn-Off Fall Time
3.5
8.7
13.5
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10.5
16
ns
Qrr
11
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T=25°C.
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
www.aosmd.com
Page 2 of 6
AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
80
100
80
60
40
20
0
VDS=5V
10V
5V
7V
4.5V
4V
3.5V
60
125°C
40
25°C
20
VGS=3V
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=4.5V
VGS=10V
ID=20A
4
2
0.8
0
5
10
15
D (A)
20
25
30
0
25
50
75
100 125 150 175 200
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
25
20
15
10
5
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage (Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: February 2011
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Page 3 of 6
AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
200
0
10
VDS=15V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
DS (Volts)
20
25
30
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
0.01
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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Page 4 of 6
AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
TA=25°C
TA=150°C
TA=100°C
TA=125°C
10
0
25
50
75
100
125
150
175
1
10
100
1000
TCASE (°C)
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
100
80
60
40
20
0
50
40
30
20
10
0
TA=25°C
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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Page 5 of 6
AOD418/AOI418
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Rev 0: February 2011
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Page 6 of 6
相关型号：
AOI452A
Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3
AOS
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