AOI452A [AOS]
Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3;
| 型号： | AOI452A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, 55A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOI452A
N-Channel SDMOSTM Power Transistor
General Description
Features
The AOI452A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
V
DS (V) =25V
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
ID = 55A
R
DS(ON) < 7.3mΩ
DS(ON) < 14mΩ
R
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% Rg Tested!
TO-251A
IPAK
D
Bottom View
Top View
D
G
S
G
S
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
Continuous Drain
Current G
±20
55
V
A
TC=25°C
TC=100°C
43
Pulsed Drain Current C
120
16
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
A
13
IAR
27
A
EAR
36
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TA=25°C
3.2
PDSM
W
Power Dissipation A
TA=70°C
2.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
14.2
39
Max
17
47
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
RθJC
2.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
VDS=25V, VGS=0V
10
50
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
VDS=VGS ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=20A
100
2.5
nA
V
VGS(th)
ID(ON)
1.5
2
V
120
A
6
9
7.3
10.8
14
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
11.1
50
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.7
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
990
210
125
1.1
1180
275
175
1.7
1450
350
245
2.5
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17
35
3
21.7
11
26
13
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=12.5V, ID=20A
4
4
6.4
6.8
13.8
21.5
8.7
10.6
16
9
VGS=10V, VDS=12.5V, RL=0.42Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
8.5
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
20
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Nov-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
VDS=5V
6V
7V
4.5V
4V
VGS=3.5V
125°C
25°C
4
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
18
16
14
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
6
VGS=4.5V
ID=20A
4
2
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
30
25
20
15
10
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=20A
125°C
125°C
25°C
0.8
25°C
0
0.0
0.2
0.4
0.6
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
VDS=12.5V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
20
25
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
60
50
40
30
20
10
0
TA=25°C
TA=100°C
TA=125°C
TA=150°C
0.00001
0
0
25
50
75
100
125
150
175
0.000001
0.0001
0.001
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
60
50
40
30
20
10
0
TA=25°C
1
0
0
0
0.01 0.1
1
10 100 1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=47°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
12
10
8
16
14
12
10
8
3
di/dt=800A/µs
di/dt=800A/µs
2.5
2
125ºC
125ºC
25ºC
25ºC
trr
S
1.5
1
6
Qrr
Irm
125ºC
125ºC
6
4
4
25ºC
0.5
0
2
25ºC
2
0
0
0
0
5
10
15
S (A)
20
25
30
0
5
10
15
20
25
30
I
I
S (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25
20
15
10
5
10
15
12
9
2.5
Is=20A
125ºC
Is=20A
125ºC
8
6
4
2
0
2
trr
25ºC
1.5
1
25ºC
125ºC
25ºC
Qrr
125º
6
S
3
0.5
25ºC
Irm
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI452A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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