AOI444 [FREESCALE]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AOI444 |
| 厂家： | 
Freescale |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD444/AOI444
60V N-Channel MOSFET
General Description
The AOD444/AOI444 combine advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). Those devices are suitable for use
in PWM, load switching and general purpose applications.
Features
VDS
60V
12A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
< 60mΩ
< 85mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
60
V
VGS
ID
IDM
IDSM
Gate-Source Voltage
Continuous Drain
Current G
±20
V
A
TC=25°C
12
TC=100°C
9
Pulsed Drain Current C
30
TA=25°C
TA=70°C
4
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
3
19
IAS, IAR
A
EAS, EAR
18
mJ
TC=25°C
20
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
10
2.1
PDSM
W
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.4
50
Max
30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
Steady-State
Steady-State
RθJC
4
7.5
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AOD444/AOI444
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
VDS=48V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
2.4
VGS=10V, VDS=5V
30
A
VGS=10V, ID=12A
47
85
60
100
85
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
67
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
14
S
V
A
0.74
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
360
40
450
61
540
80
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
16
27
40
VGS=0V, VDS=0V, f=1MHz
0.6
1.4
2.0
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.5
3.8
1.2
1.9
4.2
3.4
16
10
5
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=30V, ID=12A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=30V, RL=2.5Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
2
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27
30
35
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
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AOD444/AOI444
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
VDS=5V
7V
6V
5V
10V
4.5V
4V
25°C
125°C
4
VGS=3.5V
0
0
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
100
90
80
70
60
50
40
30
2.4
2.2
2
VGS=10V
ID=12A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=6A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100 125 150 175 200
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
130
110
90
1.0E+01
ID=12A
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
70
25°C
50
25°C
30
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOD444/AOI444
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
700
600
500
400
300
200
100
0
VDS=30V
ID=12A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
RDS(ON)
DC
TJ(Max)=175°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AOD444/AOI444
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
100
10
1
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
0
25
50
75
100
125
150
175
1
10
Time in avalanche, tA (µs)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
Figure 12: Single Pulse Avalanche capability (Note
C)
10000
1000
100
10
16
14
12
10
8
TA=25°C
6
4
2
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOD444/AOI444
60V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
6/6
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AOS
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