AOL1400L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1400L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1400 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
good body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard product AOL1400 is Pb-free
(meets ROHS & Sony 259 specifications). AOL1400L
is a Green Product ordering option. AOL1400 and
AOL1400L are electrically identical.
VDS (V) = 30V
ID = 85A
(VGS = 10V)
RDS(ON) < 4.5mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B
VGS
±12
85
TC=25°C G
TC=100°C B
ID
70
IDM
Pulsed Drain Current
Continuous Drain
Current G
200
17
A
TA=25°C
TA=70°C
IDSM
IAR
13
Avalanche Current C
30
A
C
Repetitive avalanche energy L=0.3mH
EAR
145
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
21
48
1
Max
25
60
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case C
RθJA
A
RθJC
1.5
Alpha & Omega Semiconductor, Ltd.
AOL1400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
0.005
1.1
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
VDS=24V, VGS=0V
30
V
1
5
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
100
1.8
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=250μA
VGS=4.5V, VDS=5V
GS=10V, ID=20A
0.6
100
A
V
3.9
5
4.5
6
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
4.6
102
0.64
5.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
9130 10500
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
625
387
V
0.4
0.8
85
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
72.4
13.4
16.8
14.7
14.2
105.5
23.5
30.5
21
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
22
21
VGS=10V, VDS=15V, RL=0.75Ω,
Turn-On Rise Time
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
150
35
Turn-Off Fall Time
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
33
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
D
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev 1: Dec 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
VDS=5V
4.5V
3.0V
2.5V
125°C
VGS=2V
25°C
2
0
1
2
3
4
5
0
0.5
1
1.5
2.5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.8
1.6
1.4
1.2
1
VGS=4.5
ID=20A
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
6
4
25°C
25°C
2
0
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
5
4
3
2
1
0
VDS=15V
ID=20A
Ciss
10000
8000
6000
4000
2000
0
Coss
Crss
0
20
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
80
0
5
10
15
VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
1000
100
10
1000
TJ(Max)=175°C, TA=25°C
10μs
TJ(Max)=175°C
800
600
400
200
0
TA=25°C
100μs
1ms
RDS(ON)
limited
10ms
DC
1
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note B)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJC=1.5°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOL1400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
TA=25°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125 150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
100
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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