AOL1712 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1712 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1712
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
SRFET TM AOL1712 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
VDS (V) = 30V
ID =65A
(VGS = 10V)
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8TM Top View
D
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
65
V
A
TC=25°C
Continuous Drain
Current B, H
Pulsed Drain Current C
TC=100°C
ID
65
80
IDM
TA=25°C
TA=70°C
16
Continuous Drain
Current A
Avalanche Current C
A
IDSM
IAR
12
38
A
Repetitive avalanche energy L=0.3mH C
EAR
217
100
50
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.6
50
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case D
60
Steady-State
RθJC
1
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=30V, VGS=0V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
V
DS=0V, VGS= ±12V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.4
80
1.8
VGS=10V, VDS=5V
A
V
GS=10V, ID=20A
3.5
5.5
4.4
90
4.2
6.6
5.5
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
GS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Diode Continuous Current H
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.36
0.5
65
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3940 5120
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
590
255
VGS=0V, VDS=0V, f=1MHz
0.72
1.1
95
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
73
35
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10.4
12.4
9.8
8.4
45
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
10
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
36
43
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
32
nC
A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: July. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
100
80
60
40
20
0
VDS=5V
10V
4.5V
3.5V
VGS=3.0V
125°C
25°C
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
3.5
4
V
DS (Volts)
Figure 1: On-Region Characteristics
5
1.9
1.7
1.5
1.3
1.1
0.9
0.7
ID=20A
VGS=10V
VGS=4.5V
4.5
4
VGS=4.5V
VGS=10V
3.5
3
0
5
10
15
20
25
30
-40 -15 10 35
60 85 110 135 160 185
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
12
100
ID=20A
10
8
10
1
125°C
125°C
25°C
6
0.1
25°C
4
0.01
0.001
2
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
TJ(Max)=175°C
TC=25°C
100µs
1ms
RDS(ON)
10ms
limited
100ms
DC
TJ(Max)=175°C
TC=25°C
10
0.1
1
10
10
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
100
80
80
TC=25°C
60
40
60
40
20
0
20
0
25
50
75
100
125
150
175
1.0E-06
1.0E-05
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1.0E-04
1.0E-03
TCASE (°C)
Figure 13: Power De-rating (Note B)
80
60
40
20
0
100
TJ(Max)=150°C
TA=25°C
80
60
40
20
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJc.RθJc
RθJA=60°C/W
0.1
0.01
PD
D=Ton/T
Single Pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1712
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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