AON6240 [AOS]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AON6240 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6240
40V N-Channel MOSFET
General Description
Product Summary
VDS
40V
The AON6240 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
85A
< 1.6mΩ
< 2.4mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
67
A
Pulsed Drain Current C
IDM
355
27
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
22
IAS, IAR
82
A
EAS, EAR
336
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.3
PDSM
W
°C
Power Dissipation A
1.5
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14
40
1
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
55
RθJC
1.5
Rev 0: February 2011
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Page 1 of 6
AON6240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.4
nA
V
VGS(th)
ID(ON)
1.3
1.9
355
A
1.3
2.1
1.8
166
0.7
1.6
2.7
2.4
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous CurrentG
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4360 5458
6550
1815
176
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
970
30
1395
103
1.0
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
0.5
1.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
58
24
72.8
31
88
44
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
14.8
10.8
14.8
5.5
ns
RGEN=3Ω
tD(off)
tf
61.3
10
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
16
59
23.9
84.6
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
110
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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Page 2 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VDS=5V
4.5V
10V
3V
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
4
3
2
1
0
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=20A
VGS=10V
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
5
4
3
2
1
0
ID=20A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2011
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Page 3 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
Ciss
6000
5000
4000
3000
2000
1000
0
VDS=20V
ID=20A
8
6
4
Coss
2
Crss
10
0
0
10
20
30
40
50
60
70
80
90
0
5
15
20
25
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
400
360
320
280
240
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
PD
0.1
0.01
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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Page 4 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100
90
TA=25°C
80
70
60
50
40
30
20
10
0
TA=100°C
TA=125°C
100.0
10.0
1.0
TA=150°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
100
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
TA=25°C
1
0
25
50
75
100
125
150
0.00001
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
1
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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Page 5 of 6
AON6240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: February 2011
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Page 6 of 6
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