AON6404 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON6404 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6404
30V N-Channel MOSFET
General Description
Product Summary
The AON6404 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 2.2mΩ (VGS = 10V)
RDS(ON) < 3.8mΩ (VGS = 4.5V)
ESD protected
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
1
8
7
2
3
G
6
4
5
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
85
V
TC=25°C
Continuous Drain
Current B,G
TC=100°C
ID
67
Pulsed Drain Current
IDM
160
25
A
TA=25°C
TA=70°C
Continuous Drain
Current A
IDSM
IAS
20
Avalanche Current
85
Single avalanche energy L=0.1mH
TC=25°C
EAS
361
83
mJ
W
PD
Power Dissipation B
33
TC=100°C
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
45
60
Maximum Junction-to-Case C
RθJC
1.1
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
34
V
V
DS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
TJ=55°C
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
2
uA
V
VGS(th)
ID(ON)
1.4
1.7
160
A
V
GS=10V, ID=20A
1.8
2.5
3
2.2
3.1
3.8
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=85A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
75
0.87
1.3
85
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
7420
1045
720
9000
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
1.2
1.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
118
54
29
22
17
18
67
25
60
66
155
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=0.75Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
80
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C, with the device mounted on 1 in2 FR-4 board with
2oz. Copper, in a still air environment with T A=25°
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsink is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. Maximum current is limited by the package.
Rev4: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
80
100
80
60
40
20
0
VGS=10V,6V,4.5V,4V
VDS=5V
3.5V
125°C
60
40
25°C
3V
2V
20
0
0
1
2
3
4
5
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
3.5
4
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
3
1.6
1.4
1.2
1
ID=20A
VGS=10V
VGS=4.5V
VGS=4.5V
2.5
2
VGS=10V
0.8
0.6
1.5
0
5
10
15
20
25
30
-50 -25
0
25
50
75
100 125 150
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
6
5
4
3
2
1
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
ID=20A
125°C
25°C
125°C
25°C
2
5
8
11
14
17
20
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
8
VDS=15V
ID=20A
10000
8000
6000
4000
2000
0
Ciss
6
4
2
Coss
Crss
0
0
20
40
60
80
100
120
0
5
10
15
20
25
30
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100000
10000
1000
100
RDS(ON)
TJ(Max)=150°C
TC=25°C
limited
10us
100us
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
1
10
0.1
1
10
100
1.00E-06
1.00E-04
1.00E-02
1.00E+00
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJc.RθJc
θJC=1.5°C/W
R
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
90
TA=25°C
80
70
60
50
40
30
20
10
0
130
110
90
70
50
0
25
50
75
100
125
150
1.000E-06
1.000E-05
1.000E-04
1.000E-03
TCASE (°C)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
100
90
80
70
60
50
40
30
20
10
0
10000
1000
100
10
1
0
25
50
75
100
125
150
1.00E-03
1.00E-01
1.00E+01
1.00E+03
Pulse Width (s)
T
CASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note A)
Figure 14: Current De-rating (Note B,G)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note A)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6404
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
AON6414A
Power Field-Effect Transistor, 50A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8
AOS
©2020 ICPDF网 联系我们和版权申明