AON6718 [AOS]
Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8;
| 型号： | AON6718 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6718
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
VDS (V) = 30V
ID = 80A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 3.7mΩ
RDS(ON) < 5mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
SRFETTM
1
8
Soft Recovery MOSFET:
Integrated Schottky Diode
2
3
7
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
80
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
63
A
A
IDM
210
18
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
15
IAR
40
A
EAR
80
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
33
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
14.2
42
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
60
1.5
RθJC
1.2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
0.025
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.2
µA
V
VGS(th)
ID(ON)
1.3
1.8
160
A
V
GS=10V, ID=20A
3.1
4.3
4.1
87
3.7
5.2
5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.4
0.7
40
V
Maximum Body-Diode Continuous CurrentG
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2975
485
3719
693
4463
900
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
204
340
476
VGS=0V, VDS=0V, f=1MHz
0.28
0.56
0.84
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
48
20
12
6
60
25
72
30
18
14
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15
10
9.2
10.7
40
V
GS=10V, VDS=15V, RL=0.75Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
12.5
13
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
10
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
16
32
ns
Qrr
26.5
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev3: Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
140
120
100
80
120
100
80
60
40
20
0
10V
VDS=5V
10V
5V
4V 4.5V
3.5V
60
40
125°C
2
VGS=3V
25°C
20
0
0
1
3
4
5
0
1
2
3
4
5
V
GS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
9
7
5
3
1
1.0E+02
ID=20A
1.0E+01
125°C
125°C
1.0E+00
1.0E-01
1.0E-02
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
1000
0
VDS=15V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
40
50
60
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
320
240
160
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
100µs
limited
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
180
160
140
120
100
80
100
80
60
40
20
0
TA=25°C
TA=100°C
60
TA=150°C
TA=125°C
40
20
0
0
25
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
T
CASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=60°C/W
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
20A
5A
0.6
0.5
0.4
0.3
0.2
0.1
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
10A
VDS=30V
VDS=15V
IS=1A
0
50
100
Temperature (°C)
150
200
0
50
100
Temperature (°C)
150
200
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
38
36
34
32
30
28
26
14
12
10
8
16
3
di/dt=800A/µs
di/dt=800A/µs
125ºC
14
12
10
8
2.5
2
trr
125ºC
25ºC
25ºC
1.5
1
Qrr
Irm
125ºC
25ºC
6
6
125ºC
4
4
S
25ºC
0.5
0
2
2
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IS (A)
IS (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
35
30
25
20
15
10
5
10
24
21
18
15
12
9
2.5
125ºC
Is=20A
Is=20A
8
6
4
2
0
2
25ºC
125ºC
1.5
1
trr
125º
Qrr
25ºC
125º
25ºC
S
6
Irm
0.5
0
25ºC
3
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Alpha & Omega Semiconductor, Ltd.
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