AON6780 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON6780 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6780
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6780 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
30V
85A
ID (at VGS=10V)
< 1.7mΩ
< 2.2mΩ
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
SRFETTM
Soft Recovery MOSFET:
1
2
3
4
8
7
6
5
Integrated Schottky Diode
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
V
VGS
ID
IDM
IDSM
±12
Gate-Source Voltage
Continuous Drain
Current G
V
A
TC=25°C
85
67
TC=100°C
Pulsed Drain Current C
320
30
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
A
24
IAS, IAR
68
A
EAS, EAR
231
83
mJ
TC=25°C
PD
W
Power Dissipation B
Power Dissipation A
TC=100°C
TA=25°C
TA=70°C
33
2.5
PDSM
W
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
42
50
Steady-State
Steady-State
RθJC
1.1
1.5
Rev0 : Oct 2010
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Page 1 of 7
AON6780
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
30
V
V
DS=30V, VGS=0V
0.5
100
100
2
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=20A
1.2
1.5
V
320
A
1.4
2
1.7
2.4
2.2
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
1.7
140
0.4
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.7
85
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6300
570
360
0.4
7950
820
600
0.8
9600
1070
840
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
1.2
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
50
13
15
63
17
25
15
9
76
21
35
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
97
15
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
12
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
28
18
34
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Oct 2010
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Page 2 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
4.5V
3V
VGS=2.5V
125°C
25°C
0
1
2
3
4
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
D (A)
20
25
30
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
4
3
2
1
0
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
25°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Oct 2010
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Page 3 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=15V
ID=20A
10000
8000
6000
4000
2000
0
8
Ciss
6
4
Coss
2
Crss
0
0
40
80
Qg (nC)
120
160
0
5
10
VDS (Volts)
15
20
25
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
160
120
80
RDS(ON)
TJ(Max)=150°C
TC=25°C
10µs
limited
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
40
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Oct 2010
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Page 4 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=100°C
TA=25°C
80
60
40
20
0
100
10
1
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
TA=25°C
80
60
40
20
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
TCASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=50°C/W
P
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Oct 2010
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Page 5 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A
5A
10A
VDS=30V
VDS=15V
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
70
60
50
40
30
20
10
12
10
8
25
20
15
10
5
5
di/dt=800A/µs
di/dt=800A/µs
4.5
4
125ºC
125ºC
25ºC
Qrr
trr
3.5
3
25ºC
2.5
2
125ºC
6
Irm
125ºC
1.5
1
S
25ºC
4
25ºC
0.5
0
0
0
2
0
5
10
15
IS (A)
20
25
30
0
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
60
50
40
30
20
10
0
10
30
25
20
15
10
5
5
4
3
2
1
0
125ºC
Is=20A
Is=20A
8
6
4
2
0
25ºC
125ºC
125ºC
25ºC
trr
Qrr
25ºC
125ºC
Irm
S
25ºC
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev0: Oct 2010
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Page 6 of 7
AON6780
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0: Oct 2010
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Page 7 of 7
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