AON7246 [AOS]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AON7246 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7246
60V N-Channel MOSFET
General Description
Product Summary
VDS
60V
The AON7246 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
34.5A
< 15mΩ
< 19mΩ
R
DS(ON) (at VGS =4.5V)
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
D
Top View
Bottom View
Top View
1
8
2
3
7
6
G
4
5
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
60
V
V
Gate-Source Voltage
VGS
±20
34.5
22
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
A
IDM
95
TA=25°C
TA=70°C
10
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
8
IAS, IAR
20
A
EAS, EAR
20
mJ
TC=25°C
Power Dissipation B
TC=100°C
34.7
13.9
3.1
PD
W
TA=25°C
PDSM
W
°C
Power Dissipation A
2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
60
3
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
75
RθJC
3.6
Rev 0: Sep. 2011
www.aosmd.com
Page 1 of 6
AON7246
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
1.5
95
2
VGS=10V, VDS=5V
A
VGS=10V, ID=10A
12
20.5
15
15
26
19
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=9A
VDS=5V, ID=10A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
75
0.72
1
V
Maximum Body-Diode Continuous Current
35
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1070
85
1340
123
10
1610
160
14
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
6
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
2.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
16
7
21
9
25
11
nC
nC
nC
nC
ns
VGS=10V, VDS=30V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
4.7
2.6
6
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=30V, RL=3.0Ω,
RGEN=3Ω
2.5
22
ns
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
2.5
15.5
55.5
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
10.5
38.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20.5
72.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep. 2011
www.aosmd.com
Page 2 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
10V
VDS=5V
4.5V
4V
6V
125°C
3.5V
25°C
VGS=3V
4
1
2
3
4
5
6
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
20
18
16
14
12
10
8
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=10A
VGS=4.5V
VGS=4.5V
ID=9A
VGS=10V
0.8
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
30
25
20
15
10
5
1.0E+02
1.0E+01
ID=10A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep. 2011
www.aosmd.com
Page 3 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=30V
ID=10A
1600
1400
1200
1000
800
600
400
200
0
Ciss
8
6
4
Coss
2
Crss
0
0
5
10
15
20
25
0
10
20
VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=3.6°C/W
PD
0.1
0.01
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep. 2011
www.aosmd.com
Page 4 of 6
AON7246
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
0
1
10
100
1000
0
25
50
75
TCASE (°C)
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
40
35
30
25
20
15
10
5
TA=25°C
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA=75°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep. 2011
www.aosmd.com
Page 5 of 6
AON7246
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: Sep. 2011
www.aosmd.com
Page 6 of 6
相关型号：
AON7400AL
Power Field-Effect Transistor, 40A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3X3EP, 8 PIN
AOS
©2020 ICPDF网 联系我们和版权申明