AOT12N50L [AOS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AOT12N50L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
VDS
600V@150℃
12A
The AOT12N50 & AOB12N50 & AOTF12N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.52Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N50L & AOTF12N50L & AOB12N50L
Top View
TO-263
D2PAK
D
TO-220
TO-220F
D
G
S
S
S
S
D
D
G
G
G
AOT12N50
AOTF12N50
AOB12N50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT12N50/AOB12N50
AOTF12N50
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
500
V
V
VGS
±30
TC=25°C
12
12*
Continuous Drain
Current
ID
TC=100°C
8.4
8.4*
A
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
IDM
48
5.5
454
IAR
A
EAR
EAS
dv/dt
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
908
mJ
V/ns
W
W/ oC
5
250
50
PD
Power Dissipation B
Derate above 25oC
2
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
°C
300
°C
Parameter
Symbol
AOT12N50/AOB12N50
AOTF12N50
Units
Maximum Junction-to-Ambient A,D
RθJA
65
65
°C/W
Maximum Case-to-sink A
RθCS
RθJC
0.5
0.5
--
°C/W
°C/W
Maximum Junction-to-Case
2.5
* Drain current limited by maximum junction temperature.
Rev7: Jul 2011
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Page 1 of 6
AOT12N50/AOB12N50/AOTF12N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.54
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
3.3
3.9
0.36
16
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.52
Ω
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
12
48
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1089 1361 1633
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
134
10
167
12.6
3.6
200
15
1.8
5.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
30.7
7.6
37
9
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=12A
Gate Source Charge
Gate Drain Charge
13.0
29
16
35
83
98
67
277
3.4
Turn-On DelayTime
VGS=10V, VDS=250V, ID=12A,
Turn-On Rise Time
69
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
82
Turn-Off Fall Time
55.5
231
2.82
trr
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev7: Jul 2011
www.aosmd.com
Page 2 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
10V
-55°C
VDS=40V
6.5V
20
16
10
6V
125°C
12
8
4
0
1
VGS=5.5V
25°C
0.1
2
4
6
8
10
0
5
10
15
20
25
30
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
3
2.5
2
VGS=10V
ID=6A
1.5
1
VGS=10V
0.5
0
0
4
8
12
16
20
24
28
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
100
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev7: Jul 2011
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Page 3 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
VDS=400V
ID=12A
Ciss
1000
100
10
Coss
6
3
Crss
0
1
0
5
10
15
20
g (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0.1
1
10
100
V
DS (Volts)
Q
Figure 8: Capacitance Characteristics
100
100
10
10µs
RDS(ON)
limited
10µs
10
1
RDS(ON)
limited
100µs
1ms
100µs
1ms
1
10ms
DC
10ms
0.1s
DC
TJ(Max)=150°C
TC=25°C
1s
TJ(Max)=150°C
TC=25°C
0.1
0.01
0.1
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT12N50/AOB12N50 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N50 (Note F)
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev7: Jul 2011
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Page 4 of 6
AOT12N50/AOB12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.5°C/W
1
0.1
PD
Ton
T
0.01
0.001
Single Pulse
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50/AOB12N50 (Note F)
0.1
1
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F)
Rev7: Jul 2011
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Page 5 of 6
AOT12N50/AOB12N50/AOTF12N50
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev7: Jul 2011
www.aosmd.com
Page 6 of 6
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