AOT12N60L [AOS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AOT12N60L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT12N60/AOTF12N60
600V,12A N-Channel MOSFET
General Description
Product Summary
VDS
700V@150℃
12A
The AOT12N60 & AOTF12N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.55Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT12N60L & AOTF12N60L
Top View
TO-220F
TO-220
D
G
G
G
D
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT12N60
AOTF12N60
Units
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
V
VGS
TC=25°C
12
12*
Continuous Drain
Current
ID
TC=100°C
9.7
9.7*
A
Pulsed Drain Current C
IDM
IAR
48
5.5
450
Avalanche Current C
A
Repetitive avalanche energy C
EAR
EAS
mJ
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
900
50
5
dv/dt
V/ns
W
278
2.2
50
PD
Power Dissipation B
Derate above 25oC
W/ oC
°C
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT12N60
AOTF12N60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
0.45
2.5
* Drain current limited by maximum junction temperature.
Rev.6.0: June 2013
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Page 1 of 6
AOT12N60/AOTF12N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
600
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
700
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
0.65
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
VGS=10V, ID=6A
VDS=40V, ID=6A
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
3
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.46
20
0.55
Ω
S
IS=1A,VGS=0V
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
12
48
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1400 1751 2100
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
130
10
164
13
200
16
5
2.5
3.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
40
9
50
11
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=12A
Gate Source Charge
Gate Drain Charge
17.9
39
22
Turn-On DelayTime
50
VGS=10V, VDS=300V, ID=12A,
Turn-On Rise Time
70
85
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
122
74
150
90
Turn-Off Fall Time
trr
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS=100V
311
5.2
373
6.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: June 2013
www.aosmd.com
Page 2 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
10V
VDS=40V
-55°C
25
20
15
10
5
6.5V
6V
10
1
125°C
25°C
VGS=5.5V
25
0
0.1
0
5
10
15
20
30
2
4
6
8
10
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
1.0
3
2.5
2
VGS=10V
ID=6A
0.8
0.6
0.4
0.2
1.5
1
VGS=10V
0.5
0
-100
-50
0
50
100
150
200
0
5
10
15
ID (A)
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
1.0E+01
1.0E+00
1.2
1.1
1
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.9
0.8
0.0
0.2
0.4
0.6
0.8
1.0
-100
-50
0
50
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
100
150
200
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.6.0: June 2013
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Page 3 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=480V
ID=12A
Ciss
Coss
6
3
Crss
0
1
0
10
20
30
40
50
60
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
100µs
100µs
1ms
1ms
1
10ms
0.1s
1s
10ms
1000
DC
DC
0.1
0.01
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.1
0.01
1
10
100
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT12N60 (Note F)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF12N60 (Note F)
14
12
10
8
6
4
2
0
0
25
50
TCASE (°C)
Figure 11: Current De-rating (Note B)
75
100
125
150
Rev.6.0: June 2013
www.aosmd.com
Page 4 of 6
AOT12N60/AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60 (Note F)
Rev.6.0: June 2013
www.aosmd.com
Page 5 of 6
AOT12N60/AOTF12N60
Gate Charge Test Circuit &Waveform
Vgss
Qgg
10V
+
VDC
+
Vdds
Q
g
s
Qggd
VDCC
-
-
DUTT
Vgss
Igg
Chharge
Resistive Switching Test Circuit & Waveforms
RL
Vdds
Vdds
90%
10%
+
Vddd
DUUT
Vgss
VDCC
Rgg
-
Vgss
Vgss
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev.6.0: June 2013
www.aosmd.com
Page 6 of 6
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