AOT12N50 [AOS]
500V, 12A N-Channel MOSFET; 500V ，12A N沟道MOSFET
| 型号： | AOT12N50 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 500V, 12A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT12N50 / AOTF12N50
500V, 12A N-Channel MOSFET
General Description
Features
The AOT12N50 & AOTF12N50 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
VDS (V) =600V@150°C
ID = 12A
RDS(ON)< 0.52Ω
(VGS = 10V)
100% UIS Tested!
100% R g Tested!
Top View
D
TO-220F
TO-220
G
G
G
D
S
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT12N50
500
AOTF12N50
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B
Pulsed Drain Current C
Avalanche Current C
VGS
±30
TC=25°C
12
12*
TC=100°C
ID
7.6
7.6*
A
IDM
IAR
48
5.5
454
908
5
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
208
1.7
50
PD
Power Dissipation B
Derate above 25oC
0.4
W/ C
o
TJ, TSTG
Junction and Storage Temperature Range
-50 to 150
300
°C
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
Parameter
Symbol
RθJA
AOT12N50
AOTF12N50
Units
Maximum Junction-to-Ambient A
Maximum Case-to-Sink A
°C/W
65
65
RθCS
0.5
0.6
-
°C/W
°C/W
Maximum Junction-to-Case D,F
RθJC
2.5
* Drain current limited by maximum junction temperature.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT12N50/AOTF12N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
V
V
BVDSS
Drain-Source Breakdown Voltage
600
BVDSS
Breakdown Voltage Temperature
Coefficient
V/ oC
ID=250µA, VGS=0V
/∆TJ
0.54
VDS=500V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
10
VDS=400V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
IGSS
VGS(th)
RDS(ON)
gFS
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nA
V
3.3
3.9
0.36
16
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A, VGS=0V
0.52
Ω
S
VSD
0.72
1
V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
12
48
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1089 1361 1633
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
134
10
167
12.6
3.6
200
15
5
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=400V, ID=12A
VGS=10V, VDS=250V, ID=12A,
1.8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30.7
7.6
37
nC
nC
nC
ns
ns
ns
ns
9
13.0
29
16
35.0
83.0
98.0
67.0
69
RG=25Ω
tD(off)
tf
82
55.5
231
2.82
trr
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
277.0
3.4
ns
Qrr
µC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. L=60mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C
Rev 2. Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
100
10V
-55°C
VDS=40V
125°C
6.5V
20
16
12
8
10
1
6V
25°C
4
VGS=5V
0
0.1
0
5
10
15
DS (Volts)
20
25
30
2
4
6
8
10
V
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
0.8
3
0.7
0.6
0.5
0.4
0.3
0.2
2.5
2
VGS=10V
VGS=10V
ID=6A
1.5
1
0.5
0
0
4
8
12
16
D (A)
20
24
28
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
I
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
1.1
1
1.0E+02
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
-100
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
VDS=400V
ID=12A
Ciss
Coss
6
3
Crss
0
10
0
5
10
15
20
g (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0.1
1
10
100
Q
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10
1
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
100µs
100µs
1ms
1ms
10ms
DC
10ms
0.1s
DC
0.1s
1s
0.1
0.01
0.1
TJ(Max)=150°C
TC=25°C
10s
TJ(Max)=150°C
TC=25°C
0.01
1
1
10
100
1000
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT10N60 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF10N60 (Note F)
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT12N50/AOTF12N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=0.6°C/W
T
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50 (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=2.5°C/W
T
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT12N50/AOTF12N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明