AOT2500L [AOS]

Plastic Encapsulated Device; 塑料封装的器件
AOT2500L
型号: AOT2500L
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

Plastic Encapsulated Device
塑料封装的器件

晶体 晶体管 功率场效应晶体管
文件: 总3页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AOS Semiconductor  
Product Reliability Report  
AOT2500L, rev A  
Plastic Encapsulated Device  
ALPHA & OMEGA Semiconductor, Inc  
www.aosmd.com  
1
This AOS product reliability report summarizes the qualification result for AOT2500L. Accelerated  
environmental tests are performed on a specific sample size, and then followed by electrical test  
at end point. Review of final electrical test result confirms that AOT2500L passes AOS quality and  
reliability requirements.  
Table of Contents:  
I.  
Product Description  
II.  
Package and Die information  
Environmental Stress Test Summary and Result  
Reliability Evaluation  
III.  
IV.  
V.  
Appendix: Test data  
I. Product Description:  
The AOT2500L uses Trench MOSFET technology that is uniquely optimized to provide the most  
efficient high frequency switching performance. Both conduction and switching power losses are  
minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for  
boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and  
LED backlighting.  
-RoHS Compliant  
-Halogen-Free  
Details refer to the datasheet.  
II. Die / Package Information:  
AOT2500L  
Process  
Standard sub-micron  
150V N-Channel MOSFET  
TO220  
Bare Cu  
Soft solder  
Package Type  
Lead Frame  
Die Attach  
Bonding  
Al wire  
Mold Material  
Moisture Level  
Epoxy resin with silica filler  
Up to Level 1  
2
III. Result of Reliability Stress for AOT2500L  
Test Item  
Test Condition Time  
Point  
Lot  
Attribution  
Total  
Sample size of  
Failures  
Number  
Reference  
Standard  
12 lots  
2541pcs  
0
0
0
0
JESD22-  
A113  
MSL  
Precondition  
-
168hr 85°c  
/85%RH +3 cycle  
reflow@260°c  
168hrs  
500 hrs  
1000 hrs  
616pcs  
JESD22-  
A108  
HTGB  
HTRB  
HAST  
Temp = 150°c ,  
Vgs=100% of  
Vgsmax  
2 lots  
6 lots  
77 pcs / lot  
616pcs  
168hrs  
500 hrs  
1000 hrs  
JESD22-  
A108  
Temp = 150°c ,  
Vds=80% of  
Vdsmax  
2 lots  
6 lots  
77 pcs / lot  
693pcs  
96 hrs  
9 lots  
JESD22-  
A110  
130°c , 85%RH,  
33.3 psi, Vds =  
80% of Vdsmax  
(Note A*)  
12 lots  
77 pcs / lot  
924pcs  
96 hrs  
0
0
JESD22-  
A102  
Pressure Pot  
121°c , 29.7psi,  
RH=100%  
(Note A*)  
12 lots  
77 pcs / lot  
924pcs  
250 / 500  
cycles  
JESD22-  
A104  
Temperature  
Cycle  
-65°c to 150°c ,  
air to air,  
(Note A*)  
77 pcs / lot  
Note A: The reliability data presents total of available generic data up to the published date.  
IV. Reliability Evaluation  
FIT rate (per billion): 3.27  
MTTF = 34906 years  
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in  
sample size of the selected product (AOT2500L). Failure Rate Determination is based on JEDEC  
Standard JESD 85. FIT means one failure per billion hours.  
Failure Rate (FIT) = Chi2 x 109 / [2 (N) (H) (Af)]  
= 1.83 x 109 / [2x (4x77x500 +12x77x1000) x259] = 3.27  
MTTF = 109 / FIT = 3.06 x 108hrs = 34906 years  
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval  
N = Total Number of units from HTRB and HTGB tests  
H = Duration of HTRB/HTGB testing  
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C )  
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u 1/Tj s)]  
Acceleration Factor ratio list:  
55 deg C  
70 deg C  
85 deg C  
32  
100 deg C  
13  
115 deg C  
5.64  
130 deg C  
2.59  
150 deg C  
1
Af  
259  
87  
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16  
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16  
k = Boltzmann’s constant, 8.617164 x 10-5eV / K  
3

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