AOT404L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOT404L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOT404 is
Pb-free (meets ROHS & Sony 259 specifications).
AOT404L is a Green Product ordering option.
VDS (V) = 105V
ID = 40 A (VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V) @ 20A
RDS(ON) < 31 mΩ (VGS = 6V)
AOT404 and AOT404L are electrically identical.
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
105
V
VGS
Gate-Source Voltage
±25
40
V
A
TC=25°C
Continuous Drain
Current
TC=100°C
ID
28
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
100
20
A
200
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Steady-State
Steady-State
RθJA
50
60
°C/W
Maximum Junction-to-Case B
RθJC
1
1.5
°C/W
Alpha Omega Semiconductor, Ltd.
AOT404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=84V, VGS=0V
105
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±25V
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
2.5
3.2
VGS=10V, VDS=5V
100
A
V
GS=10V, ID=20A
21.5
44
28
53
31
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=6V, ID=20A
24
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
IS=1A, VGS=0V
50
S
V
A
0.73
1
Maximum Body-Diode Continuous Current
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2038 2445
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
204
85
1.3
1.56
46
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
38.5
7.7
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=50V, ID=30A
13.4
12.7
8.2
VGS=10V, VDS=50V, RL=2.7Ω,
RGEN=3Ω
tD(off)
tf
31.5
11.2
61.6
172.4
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
74
ns
Qrr
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
VDS=5V
80
20
6V
60
125°C
40
20
0
10
0
5V
25°C
VGS=4.5V
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
5
V
DS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
30
20
10
2.4
2.2
2
VGS=10V, 20A
1.8
1.6
1.4
1.2
1
VGS=6V
VGS=6V,20A
VGS=10V
0.8
0
10
20
30
40
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
50
40
30
20
125°C
125°C
ID=30A
25°C
0.8
25°C
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
1.0
1.2
4
8
12
16
20
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
10
VDS=50V
ID=30A
8
Ciss
2
6
4
1
Coss
2
Crss
0
0
0
10
20
30
40
0
20
40
60
80
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
300
200
100
0
TJ(Max)=175°C, TA=25°C
TJ(Max)=175°C
TA=25°C
100µs
1ms, DC
RDS(ON)
limited
1
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
T
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOT404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
100
50
60
40
20
TA=25°C
TA=150°C
0
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
50
40
30
20
10
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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