AOT5N100 [AOS]
1000V,4A N-Channel MOSFET; 1000V , 4A N沟道MOSFET型号: | AOT5N100 |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | 1000V,4A N-Channel MOSFET |
文件: | 总6页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOT5N100/AOTF5N100
1000V,4A N-Channel MOSFET
General Description
Product Summary
VDS
1100@150℃
4A
The AOT5N100 & AOTF5N100 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
parts can be adopted quickly into new and existing offline
power supply designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.2Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT5N100L & AOTF5N100L
Top View
TO-220
TO-220F
D
G
S
D
S
S
D
G
G
AOT5N100
AOTF5N100
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT5N100
AOTF5N100
Units
Drain-Source Voltage
VDS
1000
±30
V
Gate-Source Voltage
VGS
V
A
TC=25°C
4
4*
Continuous Drain
Current
ID
TC=100°C
2.5
2.5*
Pulsed Drain Current C
IDM
15
2.8
117
235
5
Avalanche Current C
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
mJ
V/ns
W
195
1.6
42
PD
Power Dissipation B
Derate above 25oC
W/ oC
0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT5N100
AOTF5N100
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
0.5
65
--
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
0.64
3
* Drain current limited by maximum junction temperature.
Rev1: Aug 2012
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Page 1 of 6
AOT5N100/AOTF5N100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
1000
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
1100
1.04
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=1000V, VGS=0V
VDS=800V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V, ID=250µA
VGS=10V, ID=2.5A
VDS=40V, ID=2.5A
IS=1A,VGS=0V
3.3
3.9
3.5
5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
4.2
Ω
S
VSD
0.73
1
4
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
15
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
750
40
3.5
2
950
62
6
1150
85
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
9
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=800V, ID=5A
4.3
6.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
15
19
4.6
6.5
27
23
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=500V, ID=5A,
Turn-On Rise Time
40
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
50
Turn-Off Fall Time
33
trr
IF=5A,dI/dt=100A/µs,VDS=100V
IF=5A,dI/dt=100A/µs,VDS=100V
350
4.2
450
5.5
550
6.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Aug 2012
www.aosmd.com
Page 2 of 6
AOT5N100/AOTF5N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
7.5
VDS=40V
10V
6.0
-55°C
4.5
6V
125°C
3.0
5.5V
1.5
25°C
VGS=5V
0.0
0.1
0
5
10
15
20
25
30
2
4
6
8
10
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
3
2.5
2
10.0
8.0
6.0
4.0
2.0
0.0
VGS=10V
ID=2.5A
VGS=10V
1.5
1
0.5
0
0
2
4
6
8
10
12
-100
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
125°C
25°C
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev1: Aug 2012
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Page 3 of 6
AOT5N100/AOTF5N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
12
9
VDS=800V
ID=5A
Ciss
Coss
Crss
1000
100
10
6
3
0
1
0
5
10
15
20
25
30
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
100
10
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
100µs
100µs
1
1
1ms
1ms
DC
10ms
10ms
DC
0.1
0.01
0.1
0.01
0.1s
1s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1
10
100
1000
10000
1
10
100
1000
10000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT5N100 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF5N100 (Note F)
5
4
3
2
1
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev1: Aug 2012
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Page 4 of 6
AOT5N100/AOTF5N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.64°C/W
1
0.1
PD
Single Pulse
0.0001
0.01
Ton
T
0.001
0.000001
0.00001
0.001
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT5N100 (Note F)
0.01
0.1
1
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
1
0.1
PD
0.01
Ton
T
Single Pulse
0.0001
0.001
0.000001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF5N100 (Note F)
Rev1: Aug 2012
www.aosmd.com
Page 5 of 6
AOT5N100/AOTF5N100
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev1: Aug 2012
www.aosmd.com
Page 6 of 6
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