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AOT5N60_10 [AOS]

600V,5A N-Channel MOSFET; 600V ， 5A N沟道MOSFET
AOT5N60_10
型号： AOT5N60_10
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

600V,5A N-Channel MOSFET
600V ， 5A N沟道MOSFET
文件： 总5页 (文件大小：137K)
中文：  中文翻译
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AOT5N60  
600V,5A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
700V@150℃  
5A  
The AOT5N60 have been fabricated using an advanced  
high voltage MOSFET process that is designed to deliver  
high levels of performance and robustness in popular AC-  
DC applications.By providing low RDS(on), Ciss and Crss  
along with guaranteed avalanche capability these parts  
can be adopted quickly into new and existing offline power  
supply designs.  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
<1.8Ω  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT5N60L  
Top View  
D
TO-220  
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
600  
±30  
5
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
3.4  
A
Pulsed Drain Current C  
IDM  
16  
2.6  
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
100  
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
200  
mJ  
V/ns  
W
W/ oC  
5
132  
PD  
Power Dissipation B  
Derate above 25oC  
1.05  
-55 to 150  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TJ, TSTG  
TL  
°C  
300  
°C  
Parameter  
Symbol  
RθJA  
Typical  
Maximum  
65  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
54  
-
Maximum Case-to-sink A  
RθCS  
0.5  
Maximum Junction-to-Case  
RθJC  
0.76  
0.95  
Rev4: July 2010  
www.aosmd.com  
Page 1 of 5  
AOT5N60  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250ꢀA, VGS=0V, TJ=25°C  
ID=250ꢀA, VGS=0V, TJ=150°C  
600  
BVDSS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Zero Gate Voltage Drain Current  
700  
V
BVDSS  
/∆TJ  
V/ oC  
ID=250ꢀA, VGS=0V  
0.65  
VDS=600V, VGS=0V  
VDS=480V, TJ=125°C  
VDS=0V, VGS=±30V  
VDS=5V ID=250µA  
VGS=10V, ID=2.5A  
VDS=40V, ID=2.5A  
IS=1A,VGS=0V  
1
IDSS  
µA  
10  
IGSS  
VGS(th)  
RDS(ON)  
gFS  
Gate-Body leakage current  
Gate Threshold Voltage  
±100  
4.5  
nΑ  
V
3
3.9  
1.44  
7.7  
Static Drain-Source On-Resistance  
Forward Transconductance  
Diode Forward Voltage  
1.8  
Ω
S
VSD  
0.76  
1
5
V
IS  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
A
ISM  
16  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
466  
46  
583  
58.4  
5.3  
700  
70  
pF  
pF  
pF  
Ω
VGS=0V, VDS=25V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
4.2  
2.9  
6.5  
5.6  
3.7  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
16.8  
3.1  
8.5  
21  
20  
4
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=10V, VDS=480V, ID=5A  
Gate Source Charge  
Gate Drain Charge  
11  
25  
55  
45  
45  
250  
2.4  
Turn-On DelayTime  
VGS=10V, VDS=300V, ID=5A,  
Turn-On Rise Time  
44  
RG=25Ω  
tD(off)  
tf  
Turn-Off DelayTime  
35  
Turn-Off Fall Time  
37  
trr  
IF=5A,dI/dt=100A/µs,VDS=100V  
IF=5A,dI/dt=100A/µs,VDS=100V  
208  
2.0  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
µC  
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
dissipation limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ  
=25°C.  
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a  
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.  
G. L=60mH, IAS=2.6A, VDD=150V, RG=25Ω, Starting TJ=25°C  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev4: July 2010  
www.aosmd.com  
Page 2 of 5  
AOT5N60  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
8
100  
10  
1
10V  
VDS=40V  
6.5V  
6V  
-55°C  
6
125°C  
4
25°C  
2
VGS=5.5V  
25  
0
0.1  
0
5
10  
15  
DS (Volts)  
20  
30  
2
4
6
8
10  
V
VGS(Volts)  
Fig 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
3.0  
2.5  
2
VGS=10V  
ID=2.5A  
2.5  
2.0  
1.5  
1.0  
VGS=10V  
1.5  
1
0.5  
0
0
2
4
6
8
10  
12  
-100  
-50  
0
50  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction Temperature  
100  
150  
200  
ID (A)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage  
1.0E+01  
1.0E+00  
1.2  
1.1  
1
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
25°C  
0.9  
0.8  
-100  
-50  
0
50  
100  
150  
200  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
TJ (°C)  
VSD (Volts)  
Figure 5:Break Down vs. Junction Temparature  
Figure 6: Body-Diode Characteristics (Note E)  
Rev4: July 2010  
www.aosmd.com  
Page 3 of 5  
AOT5N60  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
15  
12  
9
10000  
1000  
100  
10  
VDS=480V  
ID=5A  
Ciss  
Coss  
6
Crss  
3
0
1
0
5
10  
15  
20  
25  
0.1  
1
10  
100  
V
DS (Volts)  
Qg (nC)  
Figure 8: Capacitance Characteristics  
Figure 7: Gate-Charge Characteristics  
100  
6
5
4
3
2
1
0
10µs  
10  
1
RDS(ON)  
limited  
100µs  
1ms  
DC  
10ms  
TJ(Max)=150°C  
TC=25°C  
0.1  
0.01  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
VDS (Volts)  
TCASE (°C)  
Figure 9: Maximum Forward Biased Safe  
Operating Area for AOT5N60 (Note F)  
Figure 10: Current De-rating (Note B)  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TC+PDM.ZθJC.RθJC  
θJC=0.95°C/W  
R
1
0.1  
PD  
Single Pulse  
Ton  
T
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT5N60 (Note F)  
Rev4: July 2010  
www.aosmd.com  
Page 4 of 5  
AOT5N60  
Gate Charge Test Circuit &Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Vds  
Ig  
Charge  
Resistive Switching TestCircuit& Waveforms  
RL  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
t d(on)  
t
r
t d(off)  
t
f
t on  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
2
EAR=1/2LI  
AR  
BVDSS  
Vds  
Id  
Vds  
+
Vgs  
Vdd  
IAR  
Vgs  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode RecoveryTest Circuit &Waveforms  
Qrr =- Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
Isd  
trr  
L
IF  
Isd  
dI/dt  
+
IRM  
Vdd  
Vgs  
VDC  
Vdd  
-
Vds  
Rev4: July 2010  
www.aosmd.com  
Page 5 of 5  

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