AOT7N70L [AOS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | AOT7N70L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT7N70/AOTF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
VDS
800V@150℃
7A
The AOT7N70 & AOTF7N70 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.8Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT7N70L & AOTF7N70L
Top View
D
TO-220F
TO-220
G
S
S
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
AOT7N70
AOTF7N70
Units
Drain-Source Voltage
Gate-Source Voltage
700
±30
V
V
VGS
TC=25°C
7
7*
Continuous Drain
Current
ID
TC=100°C
4.2
4.2*
A
Pulsed Drain Current C
IDM
IAR
24
5
Avalanche Current C
A
Repetitive avalanche energy C
EAR
EAS
187
mJ
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
375
50
5
dv/dt
V/ns
W
198
1.6
38.5
0.3
PD
Power Dissipation B
Derate above 25oC
W/ oC
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
300
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
°C
Parameter
Symbol
RθJA
AOT7N70
65
AOTF7N70
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,D
65
--
Maximum Case-to-sink A
RθCS
0.5
Maximum Junction-to-Case
RθJC
0.63
3.25
* Drain current limited by maximum junction temperature.
Rev.2.0: June 2013
www.aosmd.com
Page 1 of 6
AOT7N70/AOTF7N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
700
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
800
0.8
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=3.5A
VDS=40V, ID=3.5A
IS=1A,VGS=0V
3
4
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1.48
6.7
1.8
Ω
S
VSD
0.76
1
7
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
A
ISM
24
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
782
64
5.5
2
978
80
7
1175
104
10
pF
pF
pF
Ω
V
GS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=560V, ID=7A
4
6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
16
4
20.5
5
25
6
nC
nC
nC
ns
ns
ns
ns
Gate Source Charge
Gate Drain Charge
6.3
7.9
23
11.8
Turn-On DelayTime
VGS=10V, VDS=350V, ID=7A,
Turn-On Rise Time
50
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
53
Turn-Off Fall Time
38
trr
IF=7A,dI/dt=100A/µs,VDS=100V
IF=7A,dI/dt=100A/µs,VDS=100V
215
4.7
270
5.9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
325
7.1
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2013
www.aosmd.com
Page 2 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
9
100
10V
VDS=40V
-55°C
10
1
6.5V
125°C
6
6V
3
25°C
VGS=5.5V
0.1
0
2
4
6
8
10
0
5
10
15
20
25
30
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
3.0
3
2.5
2
VGS=10V
ID=3.5A
2.5
2.0
1.5
1.0
1.5
1
VGS=10V
0.5
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
12
14
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gat
Voltage
1.0E+02
1.0E+01
1.2
1.1
1
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
0.9
0.8
-100
-50
0
50
100
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
150
200
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
Rev.2.0: June 2013
www.aosmd.com
Page 3 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
Ciss
VDS=560V
ID=7A
1000
100
10
Coss
6
3
Crss
0
1
0
5
10
15
20
25
30
0.1
1
10
100
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10
10µs
10
1
RDS(ON)
limited
10µs
RDS(ON)
limited
100µs
100µs
1
1ms
1ms
10ms
DC
10ms
DC
0.1s
0.1
0.01
0.1
0.01
TJ(Max)=150°C
TJ(Max)=150°C
TC=25°C
1s
TC=25°C
1
10
100
VDS (Volts)
1000
10000
1
10
100
VDS (Volts)
1000
10000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF7N70 (Note F)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT7N70 (Note F)
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.2.0: June 2013
www.aosmd.com
Page 4 of 6
AOT7N70/AOTF7N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=0.63°C/W
1
0.1
PD
Ton
T
0.01
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N70 (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=3.25°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N70 (Note F)
Rev.2.0: June 2013
www.aosmd.com
Page 5 of 6
AOT7N70/AOTF7N70
Gate
C
avveefformm
Vg
Qgg
10V
+
VDC
+
Vds
Qgs
Qgd
VDC
-
-
DDUT
Vgs
Vds
Igg
Chargge
Resistive SSwitching Test Circuit & Waveformmss
RL
Vdds
9
+
Vddd
DUT
Vggs
VDC
Rg
-
1
Vggs
Vggs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Rev.2.0: June 2013
www.aosmd.com
Page 6 of 6
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