AOTF10T60 [AOS]
Plastic Encapsulated Device; 塑料封装的器件
| 型号： | AOTF10T60 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Plastic Encapsulated Device |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOS Semiconductor
Product Reliability Report
AOTF10T60, rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF10T60.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOTF10T60 passes
AOS quality and reliability requirements.
Table of Contents:
I.
Product Description
II.
Package and Die information
Reliability Stress Test Summary and Result
Reliability Evaluation
III.
IV.
V.
Appendix: Test data
I. Product Description:
The AOTF10T60 is fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications. By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted
quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOTF10T60L
Details refer to the datasheet.
II. Die / Package Information:
AOTF10T60
Process
Standard sub-micron
600V N-Channel MOSFET
TO220F
Bare Cu
Soft solder
Package Type
Lead Frame
Die Attach
Bonding
Al wire
Mold Material
Moisture Level
Epoxy resin with silica filler
Up to Level 1
2
III. Result of Reliability Stress for AOTF10T60
Test Item
Test Condition Time
Point
Lot
Attribution
Total
Sample size of
Failures
Number
Reference
Standard
21 lots
4158pcs
0
0
0
0
JESD22-
A113
MSL
Precondition
-
168hr 85°c
/85%RH +3 cycle
reflow@250°c
168hrs
500 hrs
1000 hrs
2 lots
3 lots
6 lots
847pcs
JESD22-
A108
HTGB
HTRB
HAST
Temp = 150°c ,
Vgs=100% of
Vgsmax
77 pcs / lot
847pcs
168hrs
500 hrs
1000 hrs
2 lots
3 lots
6 lots
JESD22-
A108
Temp = 150°c ,
Vds=80% of
Vdsmax
77 pcs / lot
1155pcs
96 hrs
15 lots
JESD22-
A110
130°c , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
(Note A*)
18 lots
77 pcs / lot
1386pcs
96 hrs
0
0
JESD22-
A102
Pressure Pot
121°c , 29.7psi,
RH=100%
(Note A*)
21 lots
77 pcs / lot
1617pcs
250 / 500
cycles
JESD22-
A104
Temperature
Cycle
-65°c to 150°c ,
air to air,
(Note A*)
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 2.92
MTTF = 39075 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF10T60). Failure Rate Determination is based on
JEDEC Standard JESD 85. FIT means one failure per billion hours.
Failure Rate (FIT) = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2x (4x77x168 +6x77x500 +12x77x1000) x259] = 2.92
MTTF = 109 / FIT = 3.42 x 108hrs = 39075 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C )
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
259
87
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 x 10-5eV / K
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