AOTF256L [AOS]
150V N-Channel MOSFET; 150V N沟道MOSFET
| 型号： | AOTF256L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 150V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF256L
150V N-Channel MOSFET
General Description
Product Summary
VDS
150V
The AOTF256L uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
12A
< 85mΩ
< 100mΩ
100% UIS Tested
100% Rg Tested
TO220FL
Top View
Bottom View
D
G
S
D
G
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
150
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
12
Continuous Drain
Current
ID
TC=100°C
8.5
A
Pulsed Drain Current C
IDM
35
TA=25°C
TA=70°C
3
Continuous Drain
Current
IDSM
A
2.5
Avalanche Current C
IAS
9
A
Avalanche energy L=0.1mH C
EAS
4
33
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
16
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
60
RθJC
3.8
4.6
Rev 0: August 2012
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Page 1 of 6
AOTF256L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
150
V
VDS=150V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.8
nA
V
VGS(th)
ID(ON)
1.8
35
2.25
A
70
139
78
85
170
100
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=8A
mΩ
S
VDS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
35
IS=1A,VGS=0V
0.72
1
V
Maximum Body-Diode Continuous Current
12
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1165
61.5
2.5
pF
pF
pF
Ω
VGS=0V, VDS=75V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.1
2.2
3.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.5
7
22
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=75V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4
1.2
6.5
5
VGS=10V, VDS=75V, RL=7.5Ω,
RGEN=3Ω
ns
tD(off)
tf
23
2.5
ns
ns
trr
IF=10A, dI/dt=500A/µs
IF=10A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
37
ns
Qrr
nC
265
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2012
www.aosmd.com
Page 2 of 6
AOTF256L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10V
VDS=5V
4.0V
4.5V
7V
125°C
3.5V
25°C
VGS=3.0V
4
0
0
1
2
3
4
5
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
100
90
80
70
60
50
2.8
2.6
2.4
2.2
2
VGS=10V
ID=10A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=8A
VGS=10V
0.8
0
25
50
75
100 125 150 175 200
0
3
6
9
12
15
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
160
140
120
100
80
1.0E+01
ID=10A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
60
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: August 2012
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Page 3 of 6
AOTF256L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=75V
ID=10A
Ciss
1200
1000
800
600
400
200
0
8
6
4
2
Coss
Crss
50
0
0
4
8
12
16
20
0
25
75
VDS (Volts)
Figure 8: Capacitance Characteristics
100
125
150
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
800
600
400
200
0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
1
10
100
1000
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.6°C/W
1
0.1
PD
Single Pulse
0.001
Ton
T
0.01
1E-05
0.0001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2012
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Page 4 of 6
AOTF256L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
40
30
20
10
0
TA=100°C
TA=25°C
10
TA=150°C
TA=125°C
1
1
10
100
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
20
TA=25°C
15
10
5
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2012
www.aosmd.com
Page 5 of 6
AOTF256L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: August 2012
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Page 6 of 6
相关型号：
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AOS
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