AOU417 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOU417 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOU417
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU417 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in
PWM applications. Standard product AOU417 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU417L is a Green Product ordering option.
AOU417 and AOU417L are electrically identical .
VDS (V) = -30V
ID = -18A (VGS = -10V)
RDS(ON) < 22mΩ (VGS = -10V)
RDS(ON) < 40mΩ (VGS = -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,G
±20
-18
V
A
TA=25°C G
TA=100°C G
ID
-18
IDM
IAR
EAR
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
-40
-18
A
16.2
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
105
2.5
125
3
°C/W
°C/W
RθJL
Alpha & Omega Semiconductor, Ltd.
AOU417
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
±100
-2.7
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.4
-40
-2
V
GS=-10V, VDS=-5V
GS=-10V, ID=-18A
A
V
18
25
22
30
40
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-10A
29
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-18A
IS=-1A,VGS=0V
21
S
V
A
-0.7
-1
Maximum Body-Diode Continuous Current
-1.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1573 1900
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
319
211
V
GS=0V, VDS=0V, f=1MHz
6.7
10
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
29.3
15
35
18
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-15V, ID=-18A
6.1
7
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
11.7
29
VGS=-10V, VDS=-15V, RL=0.83Ω,
ns
R
GEN=3Ω
42
ns
32.5
28.3
20.5
ns
trr
IF=-18A, dI/dt=100A/µs
IF=-18A, dI/dt=100A/µs
37
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-5V
-4V
-3.5V
125°C
2.5
VGS=-3V
25°C
0
0
0
1
2
3
4
5
1
1.5
2
3
3.5
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
35
1.6
VGS=-4.5V
30
25
20
15
10
1.4
1.2
1
VGS=-10V
ID=-18A
VGS=-4.5V
ID=-10A
VGS=-10V
0.8
0
5
10
15
20
25
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-18A
50
40
30
20
10
0
125°C
125°C
25°C
25°C
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=-15V
ID=-18A
2000
1500
1000
500
0
Ciss
6
Coss
4
Crss
2
0
0
5
10
15
20
25
30
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
200
160
120
80
10µs
TJ(Max)=175°C, TA=25°C
TJ(Max)=175°C
TA=25°C
10
1
100µs
RDS(ON)
limited
1ms
100m
10s
1s
10ms
40
DC
0
0.0001
0.001
0.01
0.1
1
10
0.1
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOU417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
60
50
40
30
20
10
0
L ⋅ ID
tA
=
BV −VDD
TA=25°C
0
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
T
20
15
10
5
0
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Alpha & Omega Semiconductor, Ltd.
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