AM0912-080 [ASI]
RF POWER TRANSISTOR; RF功率晶体管
| 型号： | AM0912-080 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM0912-080
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-080 is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
PACKAGE - .400 x .400 2NLFL
MAXIMUM RATINGS
7.0 A
IC
50 V
VCB
PDISS
220 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
0.80 OC/W
TJ
TSTG
θJC
1 = COLLECTER
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 40 mA
IC = 40 mA
IE = 10 mA
65
V
BVCER
BVEBO
ICBO
65
V
RBE = 10 Ω
3.0
V
VCB = 50 V
12
mA
---
hFE
VCE = 5 V
IC = 2.0 A
20
120
90
8.4
38
100
44
POUT
PG
ηC
W
dB
%
VCC = 50 V
f = 960 to 1215 MHz
PIN = 13 W
Pulse Width = 10 µS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
AM0912-080
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
2/2
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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