HF150-50F [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF150-50F |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50F is Designed for
PACKAGE STYLE .500 4L FLG
.112x45°
L
FEATURES:
A
Ø.125 NOM.
C
FULL R
C
E
B
· PG = 14 dB min. at 150 W/30 MHz
· IMD3 = 100 dBc max. at 150 W(PEP)
· Omnigold™ Metalization System
B
E
E
D
F
G
H
K
J
MAXIMUM RATINGS
I
IC
10 A
110 V
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
VCBO
VCEO
VEBO
PDISS
TJ
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.125 / 3.18
.125 / 3.18
55 V
.245 / 6.22
.255 / 6.48
.720 / 18.28
.7.30 / 18.54
4.0 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
233 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
J
K
L
TSTG
qJC
.980 / 24.89
ORDER CODE: ASI10612
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
BVCES
BVCEO
BVEBO
ICEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 10 mA
VCE = 30 V
VCE = 60 V
VCE = 6 V
110
110
55
V
V
V
4.0
V
5
5
mA
mA
---
ICES
hFE
IC = 1.4 A
18
43.5
Cob
VCB = 50 V
f = 1.0 MHz
220
pF
GP
14
37
dB
VCE = 50 V
ICQ = 100 mA
POUT = 150 W (PEP)
IMD3
h C
-30
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1202 · TELEX: 18-2651 · FAX (818) 765-3004
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