HF20-12F_1 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | HF20-12F_1 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HF20-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF20-12F is Designed for 12.5 V
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
• Replacement for MRF433 & SD1285
• PG = 15 dB Min. at 30MHz & 20W
• Emitter Ballasting for ruggedness
and reliability.
PACKAGE STYLE .380" 4L FLANGE
MAXIMUM RATINGS
4.5 A
36 V
IC
VCB
VCE
VEB
PDISS
TJ
18 V
4.0 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.2 OC/W
1 = COLLECTOR
2 = BASE
TSTG
θJC
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IC = 50 mA
IE = 5.0 mA
36
36
18
4.0
V
BVCES
BVCEO
BVEBO
ICES
V
V
V
VCE = 15 V
VCE = 5.0 V
VCB = 12.5 V
5
mA
hFE
IC = 1.0 A
10
15
200
COB
f = 1.0 MHz
100
55
pF
dB
GPE
VCC = 12.5 V
ICQ = 25 mA
POUT = 20 W (PEP)
IMD3
ηC
dBc
%
-30
f = 30.000 & 30.001 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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