HF220-28_07 [ASI]

NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
HF220-28_07
型号: HF220-28_07
厂家: ADVANCED SEMICONDUCTOR    ADVANCED SEMICONDUCTOR
描述:

NPN SILICON RF POWER TRANSISTOR
NPN硅射频功率晶体管

晶体 晶体管 射频
文件: 总2页 (文件大小:23K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HF220-28  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI HF220-28 is 28 V epitaxial  
planar transistor, designed for SSB  
and VHF communications. The device  
utilizes emitter ballasting for improved  
ruggedness and reliability.  
PACKAGE STYLE .500 4L FLG  
.112x45°  
L
A
E
C
Ø.125 NOM.  
FULL R  
C
FEATURES:  
PG = 12 dB min. at 220 W/30 MHz  
IMD3 = -30 dBc max. at 220 W(PEP)  
Omnigold™ Metalization System  
30 MHz @ 28 V operations  
IMD –30 dBc  
B
E
B
E
D
F
G
H
K
J
I
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
MAXIMUM RATINGS  
.220 / 5.59  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
IC  
16 A  
70 V  
.125 / 3.18  
.125 / 3.18  
.245 / 6.22  
.255 / 6.48  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
.720 / 18.28  
.7.30 / 18.54  
35 V  
.970 / 24.64  
.495 / 12.57  
.003 / 0.08  
.090 / 2.29  
.150 / 3.81  
.980 / 24.89  
.505 / 12.83  
.007 / 0.18  
.110 / 2.79  
.175 / 4.45  
.280 / 7.11  
1.050 / 26.67  
4.0 V  
320 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
0.6 °C/W  
J
K
L
.980 / 24.89  
TSTG  
θJC  
ORDER CODE: ASI10609  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 200 mA  
IC = 100 mA  
IE = 20 mA  
35  
V
BVCES  
BVEBO  
ICEO  
70  
V
4.0  
V
V
V
V
CE = 30 V  
CE = 35 V  
CE = 5.0 V  
5.0  
5.0  
60  
mA  
mA  
---  
ICES  
hFE  
IC = 7.0 A  
15  
---  
COB  
VCB = 28 V  
f = 1.0 MHz  
450  
---  
pF  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. C  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
1/2  
Specifications are subject to change without notice.  
HF220-28  
CHARACTERISTICS TC = 25 °C  
12  
GP  
dB  
VCE = 28 V  
ICQ = 750 mA  
POUT = 220 W  
POUT = 220 W  
---  
-30  
---  
dBc  
IMD3  
F1 = 30.000MHz  
f2 = 30.001 MHz  
ηC  
40  
---  
%
Load  
VCE = 28 V  
ICQ = 750 mA  
VSWR  
:1  
Mismatch  
IMPEDANCE DATA  
FREQ  
ZIN ()  
ZCL ()  
30 MHz  
1.15 + J0.41  
1.25 + J1.92  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. C  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
2/2  
Specifications are subject to change without notice.  

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