HSCH5315 [ASI]
Mixer Diode, Medium Barrier, X Band, 7.2dB Noise Figure, Silicon, BL1, 2 PIN;
| 型号： | HSCH5315 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | Mixer Diode, Medium Barrier, X Band, 7.2dB Noise Figure, Silicon, BL1, 2 PIN 二极管 |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSCH5315
BEAM LEAD SCHOTTKY DIODE
BATCH MATCHED
DESCRIPTION:
The HSCH5315 is a Medium Barrier
Beam Lead Schottky Diode Designed
for X-Band Mixer Applications that is
Batch Matched for NF and ZIF.
PACKAGE STYLE BL1
MAXIMUM RATINGS
IF
VR
25 mA
4.0 V
PDISS
TJ
300 mW @ TA = 25 OC
-65 OC to +175 OC
-65 OC to +200 OC
TSTG
ORDER CODE: ASI30264
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
VBR
VF
IR = 10 mA
IF = 1.0 mA
IF = 5.0 mA
4.0
500
18
V
mV
W
RD
CT
VR = 0 V
f = 1.0 MHz
0.15
pF
NF
D NF
7.2
±0.3
400
25
dB
dB
W
IF = 30 MHz
PLO = 0 dBm
NIF = 1.5 dB
f = 9.375 GHz
Z
IF
200
DC Load = 0 W
D Z
W
IF
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1202 · FAX (818) 765-3004
Specifications are subject to change without notice.
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