SD1143 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | SD1143 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1143
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1143 is 12.2 V Class C
Transistor, designed for VHF mobile
communications.
PACKAGE STYLE .380 4L STUD
A
.112x45°
C
B
FEATURES:
E
E
• Common Emitter
• PG = 10 dB at 10 W/175 MHz
• Omnigold™ Metalization System
ØC
B
I
D
H
J
G
MAXIMUM RATINGS
#8-32 UNC-2A
F
E
2.0 A
36 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VCES
VEBO
PDISS
TJ
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
A
B
C
D
E
F
G
H
I
18 V
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
36 V
4.0 V
20 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
8.8 °C/W
J
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 15 mA
IC = 50 mA
IE = 2.5 mA
18
V
36
BVCES
BVEBO
ICBO
V
4.0
V
V
CB = 15 V
CE = 5.0 V
1.0
mA
---
V
IC = 250 mA
POUT = 10 W
5.0
10
200
hFE
V
CB = 12.5 V
f = 1.0 MHz
f = 175 MHz
45
COB
pF
PG
dB
%
VCE = 12.5 V
60
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
SD1143
IMPEDANCE DATA
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are subject to change without notice.
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