VMB10-12S [ASI]

NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管


型号：	VMB10-12S
厂家：	ADVANCED SEMICONDUCTOR
描述：	NPN SILICON RF POWER TRANSISTOR NPN硅射频功率晶体管晶体晶体管射频
文件：	总1页 (文件大小：20K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

VMB10-12S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VMB10-12S is Designed for

PACKAGE STYLE .380 4L STUD

.112x45°

FEATURES:

· Omnigold™ Metalization System

ØC

MAXIMUM RATINGS

I_C

2.0 A

36 V

#8-32 UNC-2A

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

18 V

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

36 V

.220 / 5.59

.980 / 24.89

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.450 / 11.43

.090 / 2.29

.155 / 3.94

.230 / 5.84

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.490 / 12.45

.100 / 2.54

.175 / 4.45

.750 / 19.05

4.0 V

20 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

5.0 ^OC/W

T_STG

q_JC

ORDER CODE: ASI10742

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 15 mA

I_C= 50 mA

I_E= 2.5 mA

V_CB= 12.5 V

V_CE= 5.0 V

BV_CES

BV_EBO

I_CBO

4.0

1.0

---

h_FE

I_C= 250 mA

P_OUT= 10 W

5.0

200

C_OB

V_CB= 12.5 V

V_CC= 12.5 V

f = 1.0 MHz

f = 88 MHz

P_G

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

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Specifications are subject to change without notice.

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