AT42QT1011-MAH [ATMEL]
Single-key QTouch® Touch Sensor IC; 单键QTouch®触摸传感器IC
| 型号： | AT42QT1011-MAH |
| 厂家： | 
ATMEL |
| 描述： | Single-key QTouch® Touch Sensor IC |
| 文件： | 总25页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Atmel AT42QT1011
Single-key QTouch® Touch Sensor IC
DATASHEET
Features
Number of Keys:
One – configurable as either a single key or a proximity sensor
Technology:
Patented spread-spectrum charge-transfer (direct mode)
Key outline sizes:
6 mm × 6 mm or larger (panel thickness dependent); widely different sizes and
shapes possible
Electrode design:
Solid or ring electrode shapes
PCB Layers required:
One
Electrode materials:
Etched copper, silver, carbon, Indium Tin Oxide (ITO)
Electrode substrates:
PCB, FPCB, plastic films, glass
Panel materials:
Plastic, glass, composites, painted surfaces (low particle density metallic
paints possible)
Panel thickness:
Up to 12 mm glass, 6 mm plastic (electrode size and Cs dependent)
Key sensitivity:
Settable via capacitor (Cs)
Interface:
Digital output, active high
Moisture tolerance:
Increased moisture tolerance based on hardware design and firmware tuning
Operating Voltage:
1.8 V – 5.5 V; 17 µA at 1.8 V typical
Package:
6-pin SOT23-6 RoHS compliant
8-pin UDFN/USON RoHS compliant
Signal processing:
Self-calibration, auto drift compensation, noise filtering
Infinite max on-duration
Applications:
Control panels, consumer appliances, proximity sensor applications, toys,
lighting controls, mechanical switch or button,
Patents:
QTouch® (patented charge-transfer method)
HeartBeat (monitors health of device)
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1.
Pinout and Schematic
1.1
Pinout Configurations
1.1.1 6-pin SOT23-6
Pin 1 ID
SYNC/
MODE
OUT
1
6
5
4
VSS
VDD
SNS
2
3
SNSK
1.1.2 8-pin UDFN/USON
Pin 1 ID
8
SNS
VDD
SNSK
N/C
1
2
3
4
7
6
5
N/C
SYNC/MODE
OUT
VSS
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1.2
Pin Descriptions
1.2.1 6-pin SOT23-6
Table 1-1. Pin Listing
Name
OUT
VSS
Pin
1
Type
O
Comments
Output state
If Unused, Connect To...
–
2
P
Supply ground
Sense pin
Sense pin
Power
–
SNSK
SNS
3
I/O
I/O
P
Cs + Key
4
Cs
–
VDD
5
Pin is either SYNC/Slow/Fast Mode, depending on logic
level applied (see Section 3.1 on page 7)
SYNC
6
I
SYNC and Mode Input
I
Input only
O
P
Output only, push-pull
Ground or power
I/O
Input/output
OD Open drain output
1.2.2 8-pin UDFN/USON
Table 1-2. Pin Listing
Name
SNSK
N/C
Pin
1
Type
I/O
–
Comments
Sense pin
If Unused, Connect To...
Cs + Key
2
No connection
No connection
Supply ground
Output state
–
–
–
–
N/C
3
–
VSS
OUT
4
P
5
O
SYNC/
MODE
Pin is either SYNC/Slow/Fast Mode, depending on logic
level applied (see Section 3.1 on page 7)
6
I
SYNC and Mode Input
VDD
SNS
7
8
P
Power
–
I/O
Sense pin
Cs
I
Input only
O
P
Output only, push-pull
Ground or power
I/O
Input/output
OD Open drain output
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1.3
Schematics
1.3.1 6-pin SOT23-6
Figure 1-1. Basic Circuit Configuration
VDD
5
SENSE
ELECTRODE
VDD
Rs
3
4
1
OUT
SNSK
SNS
Cs
Cx
6
SYNC/MODE
VSS
2
Note: A bypass capacitor should be tightly wired
between Vdd and Vss and kept close to pin 5.
1.3.2 8-pin UDFN/USON
Figure 1-2. Basic Circuit Configuration
Vdd
SENSE
ELECTRODE
7
VDD
Rs
1
8
6
5
OUT
SNSK
SNS
Cs
2
NC
3
Cx
NC
SYNC/MODE
VSS
4
Note: A bypass capacitor should be tightly wired
between Vdd and Vss and kept close to pin 5.
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2.
Overview of the AT42QT11
2.1
Introduction
The AT42QT1011 (QT1011) is a digital burst mode charge-transfer (QT™) sensor that is capable of detecting near-
proximity or touch, making it ideal for implementing touch controls.
With the proper electrode and circuit design, the self-contained digital IC will project a touch or proximity field to
several centimeters through any dielectric like glass, plastic, stone, ceramic, and even most kinds of wood. It can
also turn small metal-bearing objects into intrinsic sensors, making them responsive to proximity or touch. This
capability, coupled with its ability to self-calibrate, can lead to entirely new product concepts.
The QT1011 is designed specifically for human interfaces, like control panels, appliances, toys, lighting controls, or
anywhere a mechanical switch or button may be found. It includes all hardware and signal processing functions
necessary to provide stable sensing under a wide variety of changing conditions. Only a single low-cost capacitor is
required for operation.
2.2
2.3
Basic Operation
Figure 1-1 on page 4 and Figure 1-2 on page 4 show basic circuits.
The QT1011 employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits power consumption
in the microamp range, dramatically reduces RF emissions, lowers susceptibility to EMI, and yet permits excellent
response time. Internally the signals are digitally processed to reject impulse noise, using a “consensus” filter which
requires four consecutive confirmations of a detection before the output is activated.
The QT switches and charge measurement hardware functions are all internal to the QT1011.
Electrode Drive
For optimum noise immunity, the electrode should only be connected to SNSK.
In all cases the rule Cs >> Cx must be observed for proper operation; a typical load capacitance (Cx) ranges from
5 – 20 pF while Cs is usually about 2 – 50 nF.
Increasing amounts of Cx destroy gain, therefore it is important to limit the amount of stray capacitance on both SNS
terminals. This can be done, for example, by minimizing trace lengths and widths and keeping these traces away
from power or ground traces or copper pours.
The traces and any components associated with SNS and SNSK will become touch sensitive and should be treated
with caution to limit the touch area to the desired location.
A series resistor, Rs, should be placed in line with SNSK to the electrode to suppress ESD and EMC effects.
2.4
Sensitivity
2.4.1 Introduction
The sensitivity on the QT1011 is a function of things like the value of Cs, electrode size and capacitance, electrode
shape and orientation, the composition and aspect of the object to be sensed, the thickness and composition of any
overlaying panel material, and the degree of ground coupling of both sensor and object.
2.4.2 Increasing Sensitivity
In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very thick panels
having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity can often be increased
by using a larger electrode or reducing panel thickness. Increasing electrode size can have diminishing returns, as
high values of Cx will reduce sensor gain.
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The value of Cs also has a dramatic effect on sensitivity, and this can be increased in value with the trade-off of
slower response time and more power. Increasing the electrode's surface area will not substantially increase touch
sensitivity if its diameter is already much larger in surface area than the object being detected. Panel material can
also be changed to one having a higher dielectric constant, which will better help to propagate the field.
In the case of proximity detection, usually the object being detected is on an approaching hand, so a larger surface
area can be effective.
Ground planes around and under the electrode and its SNSK trace will cause high Cx loading and destroy gain. The
possible signal-to-noise ratio benefits of ground area are more than negated by the decreased gain from the circuit,
and so ground areas around electrodes are discouraged. Metal areas near the electrode will reduce the field strength
and increase Cx loading and should be avoided, if possible. Keep ground away from the electrodes and traces.
2.4.3 Decreasing Sensitivity
In some cases the QT1011 may be too sensitive. In this case gain can be easily lowered further by decreasing Cs.
2.4.4 Proximity Sensing
By increasing the sensitivity, the QT1011 can be used as a very effective proximity sensor, allowing the presence of
a nearby object (typically a hand) to be detected.
In this scenario, as the object being sensed is typically a hand, very large electrode sizes can be used, which is
extremely effective in increasing the sensitivity of the detector. In this case, the value of Cs will also need to be
increased to ensure improved sensitivity, as mentioned in Section 2.4.2. Note that, although this affects the
responsiveness of the sensor, it is less of an issue in proximity sensing applications; in such applications it is
necessary to detect simply the presence of a large object, rather than a small, precise touch.
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3.
Operation Specifics
3.1
Run Modes
3.1.1 Introduction
The QT1011 has three running modes which depend on the state of the SYNC pin (high or low).
3.1.2 Fast Mode
The QT1011 runs in Fast mode if the SYNC pin is permanently high. In this mode the QT1011 runs at maximum
speed at the expense of increased current consumption. Fast mode is useful when speed of response is the prime
design requirement. The delay between bursts in Fast mode is approximately 1 ms, as shown in Figure 3-1.
Figure 3-1. Fast Mode Bursts (SYNC Held High)
SNSK
~1 ms
SYNC
3.1.3 Low Power Mode
The QT1011 runs in Low Power (LP) mode if the SYNC pin is held low. In this mode it sleeps for approximately
80 ms at the end of each burst, saving power but slowing response. On detecting a possible key touch, it temporarily
switches to Fast mode until either the key touch is confirmed or found to be spurious (via the detect integration
process). It then returns to LP mode after the key touch is resolved, as shown in Figure 3-2.
Figure 3-2. Low Power Mode (SYNC Held Low)
fast detect
integrator
~80 ms
sleep
sleep
sleep
SNSK
SYNC
OUT
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3.1.4 SYNC Mode
It is possible to synchronize the device to an external clock source by placing an appropriate waveform on the SYNC
pin. SYNC mode can synchronize multiple QT1011 devices to each other to prevent cross-interference, or it can be
used to enhance noise immunity from low frequency sources such as 50Hz or 60Hz mains signals.
The SYNC pin is sampled at the end of each burst. If the device is in Fast mode and the SYNC pin is sampled high,
then the device continues to operate in Fast mode (Figure 3-1 on page 7). If SYNC is sampled low, then the device
goes to sleep. From then on, it will operate in SYNC mode (Figure 3-2). Therefore, to guarantee entry into SYNC
mode the low period of the SYNC signal should be longer than the burst length (Figure 3-3).
Figure 3-3. SYNC Mode (Triggered by SYNC Edges)
sleep
sleep
sleep
Revert to Fast Mode
SNSK
SYNC
slow mode sleep period
SNSK
SYNC
sleep
sleep
sleep
Revert to Slow Mode
slow mode sleep period
However, once SYNC mode has been entered, if the SYNC signal consists of a series of short pulses (>10 µs) then
a burst will only occur on the falling edge of each pulse (Figure 3-4) instead of on each change of SYNC signal, as
normal (Figure 3-3).
In SYNC mode, the device will sleep after each measurement burst (just as in LP mode) but will be awakened by a
change in the SYNC signal in either direction, resulting in a new measurement burst. If SYNC remains unchanged
for a period longer than the LP mode sleep period (about 80 ms), the device will resume operation in either Fast or
LP mode depending on the level of the SYNC pin (Figure 3-3).
There is no detect integrator (DI) in SYNC mode (each touch is a detection); see Section 3.4 on page 9.
Recalibration timeout is a fixed number of measurements so will vary with the SYNC period.
Figure 3-4. SYNC Mode (Short Pulses)
SNSK
>10 μs
>10 μs
>10 μs
SYNC
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3.2
Threshold
The internal signal threshold level is fixed at 10 counts of change with respect to the internal reference level, which in
turn adjusts itself slowly in accordance with the drift compensation mechanism.
The QT1011 employs a hysteresis dropout of two counts of the delta between the reference and threshold levels.
3.3
3.4
Max On-duration
The max on-duration of this device is infinite; that is, the device will not automatically recalibrate due to a persistent
detection.
Detect Integrator
It is desirable to suppress detections generated by electrical noise or from quick brushes with an object. To
accomplish this, the QT1011 incorporates a detect integration (DI) counter that increments with each detection until a
limit is reached, after which the output is activated. If no detection is sensed prior to the final count, the counter is
reset immediately to zero. In the QT1011, the required count is four. In LP mode the device will switch to Fast mode
temporarily in order to resolve the detection more quickly; after a touch is either confirmed or denied the device will
revert back to normal LP mode operation automatically.
The DI can also be viewed as a “consensus filter” that requires four successive detections to create an output.
3.5
3.6
Forced Sensor Recalibration
The QT1011 has no recalibration pin; a forced recalibration is accomplished when the device is powered up or after
the recalibration timeout. However, supply drain is low so it is a simple matter to treat the entire IC as a controllable
load; driving the QT1011's Vdd pin directly from another logic gate or a microcontroller port will serve as both power
and “forced recalibration”. The source resistance of most CMOS gates and microcontrollers is low enough to provide
direct power without problem.
Drift Compensation
Signal drift can occur because of changes in Cx and Cs over time. It is crucial that drift be compensated for,
otherwise false detections, non-detections, and sensitivity shifts will follow.
Drift compensation (Figure 3-5) is performed by making the reference level track the raw signal at a slow rate, but
only while there is no detection in effect. The rate of adjustment must be performed slowly, otherwise legitimate
detections could be ignored. The QT1011 drift compensates using a slew-rate limited change to the reference level;
the threshold and hysteresis values are slaved to this reference.
Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high, and
therefore should not cause the reference level to change.
Figure 3-5. Drift Compensation
Signal
Threshold
Hysteresis
Reference
Output
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The QT1011 drift compensation is asymmetric; the reference level drift-compensates in one direction faster than it
does in the other. Specifically, it compensates faster for decreasing signals than for increasing signals. Increasing
signals should not be compensated for quickly, since an approaching finger could be compensated for partially or
entirely before even approaching the sense electrode. However, an obstruction over the sense pad, for which the
sensor has already made full allowance, could suddenly be removed leaving the sensor with an artificially elevated
reference level and thus become insensitive to touch. In this latter case, the sensor will compensate for the object's
removal very quickly, usually in only a few seconds.
With large values of Cs and small values of Cx, drift compensation will appear to operate more slowly than with the
converse. Note that the positive and negative drift compensation rates are different.
3.7
3.8
3.9
Response Time
The QT1011's response time is highly dependent on run mode and burst length, which in turn is dependent on Cs
and Cx. With increasing Cs, response time slows, while increasing levels of Cx reduce response time. The response
time will also be a lot slower in LP or SYNC mode due to a longer time between burst measurements.
Spread Spectrum
The QT1011 modulates its internal oscillator by ±7.5% during the measurement burst. This spreads the generated
noise over a wider band, reducing emission levels. This also reduces susceptibility since there is no longer a single
fundamental burst frequency.
Output Features
3.9.1 Output
The output of the QT1011 is active-high upon detection. The output will remain active-high for the duration of the
detection.
3.9.2 HeartBeat Output
The QT1011 output has a HeartBeat “health” indicator superimposed on it in all modes. This operates by taking the
output pin into a three-state mode for 15 µs, once before every QT burst. This output state can be used to determine
that the sensor is operating properly, using one of several simple methods, or it can be ignored.
The HeartBeat indicator can be sampled by using a pull-up resistor on the OUT pin (Figure 3-6), and feeding the
resulting positive-going pulse into a counter, flip flop, one-shot, or other circuit. The pulses will only be visible when
the chip is not detecting a touch.
Figure 3-6. Obtaining HeartBeat Pulses with a Pull-up Resistor (SOT23-6)
VDD
5
VDD
HeartBeat" Pulse
Ro
3
4
1
OUT
SNSK
SNS
6
SYNC/MODE
VSS
2
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If the sensor is wired to a microcontroller as shown in Figure 3-7 on page 11, the microcontroller can reconfigure the
load resistor to either Vss or Vdd depending on the output state of the QT1011, so that the pulses are evident in
either state.
Figure 3-7. Using a Microcontroller to Obtain HeartBeat Pulses in Either Output State (SOT23-6)
Ro
Port_M.x
Port_M.y
3
4
1
OUT
SNSK
SNS
Microcontroller
6
SYNC/MODE
Electromechanical devices like relays will usually ignore the short HeartBeat pulse. The pulse also has too low a duty
cycle to visibly affect LEDs. It can be filtered completely if desired, by adding an RC filter to the output, or if
interfacing directly and only to a high-impedance CMOS input, by doing nothing or at most adding a small noncritical
capacitor from OUT to Vss.
3.9.3 Output Drive
The OUT pin is active high and can sink or source up to 2 mA. When a large value of Cs (>20 nF) is used the OUT
current should be limited to <1 mA to prevent gain-shifting side effects, which happen when the load current creates
voltage drops on the die and bonding wires; these small shifts can materially influence the signal level to cause
detection instability.
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4.
Circuit Guidelines
4.1
More Information
Refer to Application Note QTAN0002, Secrets of a Successful QTouch Design and the Touch Sensors Design Guide
(both downloadable from the Atmel website), for more information on construction and design methods.
4.2
Sample Capacitor
Cs is the charge sensing sample capacitor. The required Cs value depends on the thickness of the panel and its
dielectric constant. Thicker panels require larger values of Cs. Typical values are 2 nF to 50 nF depending on the
sensitivity required; larger values of Cs demand higher stability and better dielectric to ensure reliable sensing.
The Cs capacitor should be a stable type, such as X7R ceramic or PPS film. For more consistent sensing from unit
to unit, 5% tolerance capacitors are recommended. X7R ceramic types can be obtained in 5% tolerance at little or no
extra cost. In applications where high sensitivity (long burst length) is required the use of PPS capacitors is
recommended.
For battery powered operation a higher value sample capacitor is recommended (typical value 8.2 nF).
4.3
4.4
UDFN/USON Package Restrictions
The central pad on the underside of the UDFN/USON chip is connected to ground. Do not run any tracks underneath
the body of the chip, only ground.
Power Supply and PCB Layout
See Section 5.2 on page 14 for the power supply range. At 3 V current drain averages less than 500 µA in Fast
mode.
If the power supply is shared with another electronic system, care should be taken to ensure that the supply is free of
digital spikes, sags, and surges which can adversely affect the QT1011. The QT1011 will track slow changes in Vdd,
but it can be badly affected by rapid voltage fluctuations. It is highly recommended that a separate voltage regulator
be used just for the QT1011 to isolate it from power supply shifts caused by other components.
If desired, the supply can be regulated using a Low Dropout (LDO) regulator, although such regulators often have
poor transient line and load stability. See Application Note QTAN0002, Secrets of a Successful QTouch™ Design for
further information.
Parts placement: The chip should be placed to minimize the SNSK trace length to reduce low frequency pickup,
and to reduce stray Cx which degrades gain. The Cs and Rs resistors (see Figure 1-1 on page 4) should be placed
as close to the body of the chip as possible so that the trace between Rs and the SNSK pin is very short, thereby
reducing the antenna-like ability of this trace to pick up high frequency signals and feed them directly into the chip. A
ground plane can be used under the chip and the associated discrete components, but the trace from the Rs resistor
and the electrode should not run near ground, to reduce loading.
For best EMC performance the circuit should be made entirely with SMT components.
Electrode trace routing: Keep the electrode trace (and the electrode itself) away from other signal, power, and
ground traces including over or next to ground planes. Adjacent switching signals can induce noise onto the sensing
signal; any adjacent trace or ground plane next to, or under, the electrode trace will cause an increase in Cx load and
desensitize the device.
Note: For proper operation a 100 nF (0.1 µF) ceramic bypass capacitor must be used directly between Vdd and
Vss, to prevent latch-up if there are substantial Vdd transients; for example, during an ESD event. The
bypass capacitor should be placed very close to the Vss and Vdd pins.
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4.5
Power On
On initial power up, the QT1011 requires approximately 100 ms to power on to allow power supplies to stabilize.
During this time the OUT pin state is not valid and should be ignored.
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5.
Specifications
5.1
Absolute Maximum Specifications
Operating temperature
–40°C to +85°C
–55°C to +125°C
0 to +6.5 V
Storage temperature
VDD
Max continuous pin current, any control or drive pin
Short circuit duration to Vss, any pin
Short circuit duration to Vdd, any pin
Voltage forced onto any pin
±20 mA
Infinite
Infinite
–0.6V to (Vdd + 0.6) V
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or other conditions beyond those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum specification
conditions for extended periods may affect device reliability
5.2
Recommended Operating Conditions
VDD
+1.8 to 5.5 V
Short-term supply ripple + noise
±20 mV
Long-term supply stability
Cs value
±100 mV
2 to 50 nF
5 to 50 pF
Cx value
5.3
AC Specifications
Vdd = 3.0 V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Parameter
TRC
Description
Recalibration time
Min
–
Typ
200
3.05
9.0
Max
Units
ms
Notes
–
–
–
Cs, Cx dependent
TPC
Charge duration
Transfer duration
–
µs
±7.5% spread spectrum variation
±7.5% spread spectrum variation
TPT
–
µs
Time between end of burst and
start of the next (Fast mode)
TG1
TG2
–
–
1.2
80
–
–
ms
ms
Time between end of burst and
start of the next (LP mode)
Increases with decreasing VDD
See Figure 5-1 on page 15
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Vdd = 3.0 V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Parameter
Description
Min
Typ
Max
Units
Notes
VDD, Cs and Cx dependent. See
Section 4.2 for capacitor
selection.
TBL
Burst length
–
2.45
–
ms
TR
Response time
–
–
–
100
–
ms
µs
THB
HeartBeat pulse width
15
Figure 5-1. TG2 – Time Between Bursts (LP Mode)
Figure 5-2. TBL – Burst Length
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5.4
Signal Processing
Vdd = 3.0V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Description
Min
Typ
10
Max
Units
counts
Notes
Threshold differential
Hysteresis
2
counts
Consensus filter length
Max on-duration
4
samples
seconds
Infinite
5.5
DC Specifications
Vdd = 3.0V, Cs = 4.7 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Parameter
Description
Supply voltage
Min
Typ
Max
Units
Notes
VDD
1.8
5.5
V
203.0
246.0
378.5
542.5
729.0
1.8 V
2.0 V
3.0 V
4.0 V
5.0 V
IDD
Supply current, Fast mode
Supply current, LP mode
–
–
–
µA
µA
16.5
19.5
34.0
51.5
73.5
1.8 V
2.0 V
3.0 V
4.0 V
5.0 V
IDDI
–
–
VDDS
VIL
Supply turn-on slope
Low input logic level
10
–
–
–
V/s
V
Required for proper start-up
0.2 × Vdd
0.3 × Vdd
Vdd = 1.8 V – 2.4 V
Vdd = 2.4 V – 5.5 V
0.7 × Vdd
0.6 × Vdd
Vdd = 1.8 V – 2.4 V
Vdd = 2.4 V – 5.5 V
VHL
High input logic level
–
–
V
VOL
VOH
IIL
Low output voltage
–
2.3
–
–
0.5
–
V
V
OUT, 4 mA sink
High output voltage
Input leakage current
Load capacitance range
Acquisition resolution
–
<0.05
–
OUT, 1 mA source
1
µA
pF
bits
CX
AR
2
50
14
–
9
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5.6
Mechanical Dimensions
5.6.1 6-pin SOT23-6
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ꢬꢕꢑꢔꢋꢄ
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DEꢖꢕꢙꢋꢘꢦꢋꢧꢑꢍꢝꢭꢓꢑꢋGꢋꢟꢟH
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ꢯꢋ
ꢢꢨꢂꢥ
ꢆ
ꢁ@ꢧꢄꢨA
ꢋ
ꢋ
ꢋ
ꢋ
ꢋ
ꢋ
ꢋ
ꢋ
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ꢋ
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ꢯꢋ
ꢢꢘꢙꢑꢝꢚꢋ ꢃꢡꢋ ꢂꢣꢕꢝꢋꢛꢍꢎꢏꢍꢐꢑꢋꢕꢝꢋꢎꢘꢟꢛꢠꢕꢍꢖꢙꢋꢔꢕꢙꢣꢋꢤꢥꢒꢥꢗꢋꢝꢛꢑꢎꢕꢦꢕꢎꢍꢙꢕꢘꢖꢋꢋ
ꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢧꢨꢩꢃꢪꢫꢋꢬꢍꢓꢕꢍꢙꢕꢘꢖꢋꢉꢄꢡ
ꢥꢋ
ꢋ
ꢆꢡꢋ ꢒꢕꢟꢑꢖꢝꢕꢘꢖꢋꢒꢋꢜꢘꢑꢝꢋꢖꢘꢙꢋꢕꢖꢎꢠꢭꢜꢑꢋꢟꢘꢠꢜꢋꢮꢠꢍꢝꢣ9ꢋꢛꢓꢘꢙꢓꢭꢝꢕꢘꢖꢝꢋꢘꢓꢋ
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Aꢋ
ꢋꢋꢋꢋ
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ꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢑ;ꢎꢑꢑꢜꢋ<ꢡꢆꢇꢋꢟꢟꢋꢛꢑꢓꢋꢑꢖꢜꢡ
ꢋ
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ꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢋꢙꢘꢋꢑ;ꢎꢑꢑꢜꢋꢙꢣꢑꢋꢟꢍ;ꢕꢟꢭꢟꢋ:ꢋꢜꢕꢟꢑꢖꢝꢕꢘꢖꢋ:=ꢋꢟꢘꢓꢑꢋꢙꢣꢍꢖꢋ<ꢡ<ꢫꢋꢟꢟ
:ꢋ
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Lꢋ
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ꢯꢋ
ꢯꢋ
ꢃꢅꢆꢇꢅꢃꢈ
ꢌꢄꢌꢍꢊ
ꢀꢁꢂꢃꢄꢅꢆꢇꢅꢈꢉ
ꢁꢊꢋꢉꢇꢇ
ꢆꢎꢏ
ꢐꢑꢌꢒ9ꢋꢀꢩꢠꢑꢍꢜ9ꢋꢆꢡJ<ꢋ;ꢋꢃꢡꢀ<ꢋꢟꢟꢋꢌꢠꢍꢝꢙꢕꢎꢋꢁꢟꢍꢠꢠꢋꢨꢭꢙꢠꢕꢖꢑꢋ
ꢌꢍꢎꢏꢍꢐꢑꢋDꢁꢨꢂꢆꢈH
ꢂꢉꢊꢋ
ꢀꢁꢂꢃ
ꢄ
ꢌꢍꢎꢏꢍꢐꢑꢋꢒꢓꢍꢔꢕꢖꢐꢋꢗꢘꢖꢙꢍꢎꢙꢚ
ꢛꢍꢎꢏꢍꢐꢑꢜꢓꢍꢔꢕꢖꢐꢝꢞꢍꢙꢟꢑꢠꢡꢎꢘꢟ
AT42QT1010 [DATASHEET]
17
9542I–AT42–05/2013
5.6.2 8-pin UDFN/USON
ꢄꢘꢙꢙꢘꢟꢋVꢕꢑꢔ
ꢂꢘꢛꢋVꢕꢑꢔ
ꢁꢕꢜꢑꢋVꢕꢑꢔ
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ꢉ
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ꢌBꢢꢋꢃꢋBꢒ
A
>
ꢃ
ꢆ
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:
ꢒ
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ꢁ
ꢏꢈꢔꢔꢈꢅꢇꢀꢄꢔꢊꢅꢑꢄꢈꢅꢑ
ꢗ
DEꢖꢕꢙꢋꢘꢦꢋꢧꢑꢍꢝꢭꢓꢑꢋGꢋꢟꢟH
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ꢆꢡꢋꢋꢗꢘꢛꢠꢍꢖꢍꢓꢕꢙ=ꢋꢍꢛꢛꢠꢕꢑꢝꢋꢙꢘꢋꢙꢣꢑꢋꢑ;ꢛꢘꢝꢑꢜꢋꢛꢍꢜꢋꢍꢝꢋꢔꢑꢠꢠꢋꢍꢝꢋꢙꢣꢑꢋꢙꢑꢓꢟꢕꢖꢍꢠꢝꢡꢋ
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ꢆꢡ<ꢇ
ꢋ
ꢥꢆꢋ
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ꢋ
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Aꢋ
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ꢢꢘꢋAꢑꢍꢜꢋꢌꢍꢎꢏꢍꢐꢑꢋDEꢒꢮꢢꢅEꢁꢨꢢH
@ꢉQꢋ
ꢫꢧꢉ>
ꢌꢍꢎꢏꢍꢐꢑꢋꢒꢓꢍꢔꢕꢖꢐꢋꢗꢘꢖꢙꢍꢎꢙꢚ
ꢛꢍꢎꢏꢍꢐꢑꢜꢓꢍꢔꢕꢖꢐꢝꢞꢍꢙꢟꢑꢠꢡꢎꢘꢟ
AT42QT1010 [DATASHEET]
18
9542I–AT42–05/2013
5.7
Part Marking
5.7.1 AT42QT1011 – 6-pin SOT23-6
Note: Samples of the AT42QT1011 may also be marked T10E.
ꢳbbreviated
ꢱart Numberꢴ
ꢳꢵ42ꢶꢵ1011
1011
ꢱin 1 Iꢲ
5.7.2 AT42QT1011 – 8-pin UDFN/USON
Note: Samples of the AT42QT1011 may also be marked T10.
ꢳbbreviated
ꢱart Numberꢴ
ꢳꢵ42ꢶꢵ1011
ꢲie Revision
(ꢸxampleꢴ “E” shown)
1011
Class code
(ꢷ ꢹ Industrial,
green Niꢱdꢳu)
ꢳssembly ꢺocation
Code
ꢷꢸC
(ꢸxampleꢴ “C” shown)
Pin 1 ID
ꢺot Number ꢵrace
code (ꢻariable text)
YZZ
ꢱin 1
ꢺast ꢲigit of Year
(ꢻariable text)
5.8
5.9
Part Number
Part Number
Description
AT42QT1011-TSHR
AT42QT1011-MAH
6-pin SOT23 RoHS compliant IC
8-pin UDFN/USON RoHS compliant IC
Moisture Sensitivity Level (MSL)
MSL Rating
Peak Body Temperature
Specifications
MSL1
260oC
IPC/JEDEC J-STD-020
AT42QT1010 [DATASHEET]
19
9542I–AT42–05/2013
Associated Documents
For additional information, refer to the following document (downloadable from the Touch Technology area of the
Atmel website, www.atmel.com):
Touch Sensors Design Guide
QTAN0002 – Secrets of a Successful QTouch Design
Revision History
Revision No.
History
Revision A – May 2009
Initialrelease
Revision B – August 2009
Revision C – August 2009
Revision D – January 2010
Revision E – January 2010
Update for chip revision 2.2.2
Minor update for clarity
Power specifications updated for revision 2.4.1
Part markings updated
MSL specification revised
Other minor updates
Revision F – February 2010
Revision G – March 2010
Revision H – May 2010
Revision I – May 2013
Update for chip revision 2.6
UDFN/USON package added
Applied new template
AT42QT1010 [DATASHEET]
20
9542I–AT42–05/2013
Notes
AT42QT1010 [DATASHEET]
21
9542I–AT42–05/2013
AT42QT1010 [DATASHEET]
22
9542I–AT42–05/2013
AT42QT1010 [DATASHEET]
23
9542I–AT42–05/2013
AT42QT1010 [DATASHEET]
24
9542I–AT42–05/2013
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