ATA2525R538-DDW_技术文档

Features

• No External Components Except PIN Diode

• Supply-voltage Range: 4.5V to 5.5V

• High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong

Signal Adaption (ATC)

• High Immunity Against Disturbances from Daylight and Lamps

• Small Size and Innovative Pad Layout

• Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted

by Zener Diode Fusing

IR Receiver

ASSP

• TTL and CMOS Compatible

• Suitable Minimum Burst Length ≥ 10 Pulses/Burst

Applications

• Home Entertainment Applications

• Home Appliances

• Remote Control Equipment

ATA2525

1. Description

The IC ATA2525 is a complete IR receiver for data communication that was devel-

oped and optimized for use in carrier-frequency-modulated transmission applications.

The IC combines small size with high sensitivity as well as high suppression of noise

from daylight and lamps. An innovative and patented pad layout offers unique flexibil-

ity for assembly of IR receiver modules. The ATA2525 is available with standard

carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regula-

tion types (standard, lamp, noise) covering requirements of different high-volume

remote control solutions (please refer to selection guide available for

ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to

5.5V.

The function of ATA2525 can be described using the block diagram (see Figure 1-1

on page 2). The input stage meets two main functions. First, it provides a suitable bias

voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed

into a voltage by a special circuit which is optimized for low-noise applications. After

amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned

integrated narrow bandpass filter with a center frequency f₀which is equivalent to the

chosen carrier frequency of the input signal. The demodulator is used to convert the

input burst signal into a digital envelope output pulse and to evaluate the signal infor-

mation quality, i.e., unwanted pulses will be suppressed at the output pin. All this is

done by means of an integrated dynamic feedback circuit which varies the gain as a

function of the present environmental condition (ambient light, modulated lamps etc.).

Other special features are used to adapt to the current application to secure best

transmission quality.

4854E–AUTO–10/06

Figure 1-1. Block Diagram

VS

IN

OUT

CGA and

filter

Micro-

controller

Input

Demodulator

AGC/ATC

and digital control

Oscillator

Carrier frequency f₀

ATA2525

Modulated IR signal

min 10 pulses

GND

2

ATA2525

4854E–AUTO–10/06

ATA2525

2. Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters

Symbol

V_S

Value

–0.3 to +6

3

Unit

V

Supply voltage

Supply current

I_S

mA

V

Input voltage

V_IN

I_IN

–0.3 to V_S

0.75

Input DC current at V_S= 5V

Output voltage

mA

V

V_O

–0.3 to V_S

10

Output current

I_O

mA

°C

Operating temperature

Storage temperature

Power dissipation at T_amb= 25°C

T_amb

T_stg

P_tot

–25 to +85

–40 to +125

°C

mW

30

3. Thermal Resistance

Parameter

Symbol

Value

Unit

Junction ambient TSSOP8

R_thJA

110

K/W

4. Electrical Characteristics

T_amb= –25°C to +85°C, V_S= 4.5V to 5.5V unless otherwise specified.

No. Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

1

Supply

1.1

1.2

2

Supply-voltage range

Supply current

Output

1

V_S

I_S

4.5

0.8

5

5.5

1.4

V

C

B

I_IN= 0

1.1

mA

T

_amb= 25°C; see

2.1

Internal pull-up resistor

1,3

R_PU

40

kΩ

A

Figure 6-7 on page 8

I_L= 2 mA; see

Figure 6-7 on page 8

2.2

2.3

2.4

3

Output voltage low

Output voltage high

3,6

3,1

3,6

V_OL

V_OH

I_OCL

250

V_S

mV

V

B

A

B

T_amb= 25°C

V_S– 0.25

Output current

clamping

R₂= 0; see

Figure 6-7 on page 8

8

mA

Input

V

_IN= 0; see

3.1

Input DC current

5

I_{IN_DCMAX}

–85

µA

C

B

Figure 6-7 on page 8

Input DC current;

Figure 6-1 on page 5

V_IN= 0; V_s= 5V,

T_amb= 25°C

3.2

–530

–960

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT

2. After transformation of input current into voltage

3

4854E–AUTO–10/06

4. Electrical Characteristics (Continued)

T_amb= –25°C to +85°C, V_S= 4.5V to 5.5V unless otherwise specified.

No. Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

Test signal: see

Figure 6-6 on page 7

V_S= 5V,

T_amb= 25°C,

I_{IN_DC}= 1 µA;

square pp,

burst N = 16,

Minimum detection

threshold current;

Figure 6-2 on page 5

3.3

3

I_Eemin

–600

pA

B

f = f₀; t_PER= 10 ms,

Figure 6-6 on page 7;

BER = 50⁽¹⁾

Test signal: see

Figure 6-6 on page 7

V_S= 5V,

T_amb= 25°C,

I_{IN_DC}= 1 µA,

square pp,

burst N = 16,

f = f₀; t_PER= 10 ms,

Figure 6-6 on page 7;

BER = 50%⁽¹⁾

Minimum detection

threshold current with

AC current disturbance

IIN_AC100 = 3 µA at

100 Hz

3.4

3

I_Eemin

–850

pA

C

Test signal: see

Figure 6-6 on page 7

V_S= 5V, T_amb= 25°C,

I_{IN_DC}= 1 µA;

square pp,

burst N = 16,

Maximum detection

threshold current

3.5

3

I_Eemax

–400

µA

D

f = f₀; t_PER= 10 ms,

Figure 6-6 on page 7;

BER = 5%⁽¹⁾

4

Controlled Amplifier and Filter

Maximum value of

variable gain (CGA)

4.1

V_S= 5V, T_amb= 25°C

G_VARMAX

G_VARMIN

G_MAX

f_{0_FUSE}

f₀

51

–5

71

f₀

dB

%

D

A

C

B

Minimum value of

variable gain (CGA)

4.2

4.3

4.4

4.5

4.6

V_S= 5V, T_amb= 25°C

Total internal

amplification⁽²⁾

Center frequency fusing

accuracy of bandpass

–3

+3

Overall accuracy center

frequency of bandpass

–6.7

f₀

+4.1

%

–3 dB; f₀= 38 kHz; see

Figure 6-4 on page 6

BPF bandwidth

B

3.5

kHz

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT

2. After transformation of input current into voltage

4

ATA2525

4854E–AUTO–10/06

ATA2525

5. Reliability

Electrical qualification (1000h at 150°C) in molded SO8 plastic package

6. Typical Electrical Curves at T_amb= 25°C

Figure 6-1. V_INversus I_{IN_DC}, V_S= 5V

3

2.94

2.79

2.44

2

1

0

1.14

0.0

0.1

1.0

10.0

100.0

1000.0

I_{IN_DC}(µA)

Figure 6-2.

I_Eeminversus I_{IN_DC}, V_S= 5V

100

10

3.6

1

1.2

0.49

0

0.1

1.0

10.0

100.0

1000.0

I_{IN_DC}(µA)

5

4854E–AUTO–10/06

Figure 6-3. Data Transmission Rate, V_S= 5V

1750

1418

Standard type

1493

1500

1250

1000

750

500

250

0

1119

735

931

693

Lamp type

Noise type

980

730

547

28

32

36

40

44

f₀(kHz)

Figure 6-4. Typical Bandpass Curve

1.1

1.0

0.9

0.8

-3 dB

0.7

0.6

0.5

0.4

∆f

0.92

0.94

0.96

0.98

1.00

1.02

1.04

1.06

1.08

f/f₀

Q = f₀/∆f; ∆f = –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11

6

ATA2525

4854E–AUTO–10/06

ATA2525

Figure 6-5. Illustration of Used Terms

1066 µs

Period (P = 16)

533 µs

7

Burst (N = 16 pulses)

IN

1

16

7

33 µs

t_DON

t_DOFF

533 µs

OUT

Envelope 1

Envelope 16

17056 µs/data word

OUT

Telegram pause

Data word

17 ms

Data word

t

T_REP= 62 ms

Example: f = 30 kHz, burst with 16 pulses, 16 periods

Figure 6-6. Test Circuit

I

_Ee= ∆U1/400 kΩ

∆U1

V_DD= 5V

400 kΩ

1 nF

I_{IN_DC}

R₁= 220Ω

VS

I_IN

I_Ee

20 kΩ

IN

ATA2525 OUT

1 nF

V_PULSE

I_{PIN_AC100}

GND

∆U2

+

I_{IN_DC}= ∆U2/40 kΩ

20 kΩ

f₀

C

₁= 4.7 µF

16

-

DC

+

t_PER= 10 ms

7

4854E–AUTO–10/06

Figure 6-7. Application Circuit

V_DD= 5V

⁽¹⁾optional

R₁= 220Ω

R₂⁽¹⁾> 2.4 kΩ

RPU = 40 kΩ

I_S

VS

I_OCL

I_L

IN

ATA2525

IN

Microcontroller

I_IN

OUT

GND

V_IN

V_O

+

(1)

I_{IN_DC}I_Ee

C₁= 4.7 µF

C₂≤ 470 pF

8

ATA2525

4854E–AUTO–10/06

ATA2525

7. Chip Dimensions

Figure 7-1. Chip Size in µm

990,960

GND

393,839

IN

603,828

scribe

OUT

224,495

ATA2525

47,72

VS

Zapping

Versioning

0,0

width

Note:

Pad coordinates are for lower left corner of the pad in µm from the origin 0,0

Dimensions

Length inclusive scribe

Width inclusive scribe

Thickness

1.04 mm

1.11 mm

290µ ±5%

80µ × 80µ

60µ × 60µ

AlCu/AlSiTi⁽¹⁾

0.8 µm

Pads

Fusing pads

Material

Pad metallurgy

Finish

Thickness

(1)

Material

Si₃N₄/SiO₂

Thickness

0.7/0.3 µm

Note:

1. Value depends on manufacture location.

9

4854E–AUTO–10/06

8. Ordering Information

Delivery: unsawn wafers (DDW) in box

Extended Type Number

ATA2525R1xx⁽¹⁾-DDW

ATA2525R3xx⁽¹⁾-DDW

ATA2525R5xx⁽¹⁾-DDW

D⁽²⁾

1493

980

Type

Standard type: high data rate

Lamp type: enhanced suppression of disturbances, secure data transmission

Noise type: best suppression of disturbances, low data rate

730

Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz)

2. Maximum data transmission rate up to bits/s with f₀= 40 kHz, V_S= 5V (see Figure 6-2 on page 5)

9. Pad Layout

Figure 9-1. Pad Layout

GND

IN

OUT

ATA2525

VS

Zapping

Versioning

Table 9-1.

Pin Description

Symbol

OUT

Function

Data output

Supply voltage

GND

VS

GND

IN

Input pin diode

f₀adjust

Zapping

Versioning

type adjust

10

ATA2525

4854E–AUTO–10/06

ATA2525

10. Revision History

Please note that the following page numbers referred to in this section refer to the specific revision

mentioned, not to this document.

Revision No.

History

• Features on page 1 changed

• Applications on page 1 changed

• Section 1 “Description” on page 1 changed

• Section 2 “Pin Configuration” on page 2 deleted

• Section 4 “Electrical Characteristics” number 3.3 on page 4 changed

• Section 4 “Electrical Characteristics” number 3.4 on page 4 changed

• Section 6 “ESD” on page 5 deleted

4854E-AUTO-10/06

• Section 10 “Ordering Information” on page 10 changed

• Put datasheet in a new template

4854D-AUTO-04/06

• Section 10 “Ordering Information” on page 10 changed

11

4854E–AUTO–10/06

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4854E–AUTO–10/06


型号：	ATA2525R538-DDW
厂家：	ATMEL
描述：	IR Receiver ASSP 红外接收器ASSP
文件：	总12页 (文件大小：181K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ATA2525R538-DDW [ATMEL]

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