ATA2525R540-DDW [ATMEL]
IR Receiver ASSP; 红外接收器ASSP型号: | ATA2525R540-DDW |
厂家: | ATMEL |
描述: | IR Receiver ASSP |
文件: | 总12页 (文件大小:181K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• No External Components Except PIN Diode
• Supply-voltage Range: 4.5V to 5.5V
• High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• High Immunity Against Disturbances from Daylight and Lamps
• Small Size and Innovative Pad Layout
• Available for Carrier Frequencies between 33 kHz to 40 kHz; Adjusted
by Zener Diode Fusing
IR Receiver
ASSP
• TTL and CMOS Compatible
• Suitable Minimum Burst Length ≥ 10 Pulses/Burst
Applications
• Home Entertainment Applications
• Home Appliances
• Remote Control Equipment
ATA2525
1. Description
The IC ATA2525 is a complete IR receiver for data communication that was devel-
oped and optimized for use in carrier-frequency-modulated transmission applications.
The IC combines small size with high sensitivity as well as high suppression of noise
from daylight and lamps. An innovative and patented pad layout offers unique flexibil-
ity for assembly of IR receiver modules. The ATA2525 is available with standard
carrier frequencies (33, 36, 37, 38, 40 kHz) and 3 different noise suppression regula-
tion types (standard, lamp, noise) covering requirements of different high-volume
remote control solutions (please refer to selection guide available for
ATA2525/ATA2526). The ATA2525 operates in a supply voltage range of 4.5V to
5.5V.
The function of ATA2525 can be described using the block diagram (see Figure 1-1
on page 2). The input stage meets two main functions. First, it provides a suitable bias
voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low-noise applications. After
amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal. The demodulator is used to convert the
input burst signal into a digital envelope output pulse and to evaluate the signal infor-
mation quality, i.e., unwanted pulses will be suppressed at the output pin. All this is
done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.).
Other special features are used to adapt to the current application to secure best
transmission quality.
4854E–AUTO–10/06
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
filter
Micro-
controller
Input
Demodulator
AGC/ATC
and digital control
Oscillator
Carrier frequency f0
ATA2525
Modulated IR signal
min 10 pulses
GND
2
ATA2525
4854E–AUTO–10/06
ATA2525
2. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
3. Thermal Resistance
Parameter
Symbol
Value
Unit
Junction ambient TSSOP8
RthJA
110
K/W
4. Electrical Characteristics
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
IIN = 0
1.1
mA
T
amb = 25°C; see
2.1
Internal pull-up resistor
1,3
RPU
40
kΩ
A
Figure 6-7 on page 8
IL = 2 mA; see
Figure 6-7 on page 8
2.2
2.3
2.4
3
Output voltage low
Output voltage high
3,6
3,1
3,6
VOL
VOH
IOCL
250
VS
mV
V
B
A
B
Tamb = 25°C
VS – 0.25
Output current
clamping
R2 = 0; see
Figure 6-7 on page 8
8
mA
Input
V
IN = 0; see
3.1
Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
–85
µA
µA
C
B
Figure 6-7 on page 8
Input DC current;
Figure 6-1 on page 5
VIN = 0; Vs = 5V,
Tamb = 25°C
3.2
–530
–960
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
3
4854E–AUTO–10/06
4. Electrical Characteristics (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal: see
Figure 6-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
Minimum detection
threshold current;
Figure 6-2 on page 5
3.3
3
IEemin
–600
pA
B
f = f0; tPER = 10 ms,
Figure 6-6 on page 7;
BER = 50(1)
Test signal: see
Figure 6-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1 µA,
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
Figure 6-6 on page 7;
BER = 50%(1)
Minimum detection
threshold current with
AC current disturbance
IIN_AC100 = 3 µA at
100 Hz
3.4
3
IEemin
–850
pA
C
Test signal: see
Figure 6-6 on page 7
VS = 5V, Tamb = 25°C,
IIN_DC = 1 µA;
square pp,
burst N = 16,
Maximum detection
threshold current
3.5
3
IEemax
–400
µA
D
f = f0; tPER = 10 ms,
Figure 6-6 on page 7;
BER = 5%(1)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
VS = 5V, Tamb = 25°C
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
–5
71
f0
dB
dB
dB
%
D
D
D
A
C
B
Minimum value of
variable gain (CGA)
4.2
4.3
4.4
4.5
4.6
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
Total internal
amplification(2)
Center frequency fusing
accuracy of bandpass
–3
+3
Overall accuracy center
frequency of bandpass
–6.7
f0
+4.1
%
–3 dB; f0 = 38 kHz; see
Figure 6-4 on page 6
BPF bandwidth
B
3.5
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2525
4854E–AUTO–10/06
ATA2525
5. Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
6. Typical Electrical Curves at Tamb = 25°C
Figure 6-1. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
2
1
0
1.14
0.0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 6-2.
IEemin versus IIN_DC, VS = 5V
100
10
3.6
1
1.2
0.49
0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
5
4854E–AUTO–10/06
Figure 6-3. Data Transmission Rate, VS = 5V
1750
1418
Standard type
1493
1500
1250
1000
750
500
250
0
1119
735
931
693
Lamp type
Noise type
980
730
547
28
32
36
40
44
f0 (kHz)
Figure 6-4. Typical Bandpass Curve
1.1
1.0
0.9
0.8
-3 dB
-3 dB
0.7
0.6
0.5
0.4
∆f
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f0/∆f; ∆f = –3 dB values. Example: Q = 1/(1.047 – 0.954) = 11
6
ATA2525
4854E–AUTO–10/06
ATA2525
Figure 6-5. Illustration of Used Terms
1066 µs
Period (P = 16)
533 µs
7
Burst (N = 16 pulses)
IN
1
16
7
7
33 µs
tDON
tDOFF
533 µs
OUT
Envelope 1
Envelope 16
17056 µs/data word
OUT
Telegram pause
Data word
17 ms
Data word
t
TREP = 62 ms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
Figure 6-6. Test Circuit
I
Ee = ∆U1/400 kΩ
∆U1
VDD = 5V
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20 kΩ
IN
ATA2525 OUT
1 nF
VPULSE
IPIN_AC100
GND
∆U2
+
IIN_DC = ∆U2/40 kΩ
20 kΩ
f0
C
1 = 4.7 µF
16
-
DC
+
tPER = 10 ms
7
4854E–AUTO–10/06
Figure 6-7. Application Circuit
VDD = 5V
(1) optional
R1 = 220Ω
R2(1) > 2.4 kΩ
RPU = 40 kΩ
IS
VS
IOCL
IL
IN
ATA2525
IN
Microcontroller
IIN
OUT
GND
VIN
VO
+
(1)
IIN_DC IEe
C1 = 4.7 µF
C2 ≤ 470 pF
8
ATA2525
4854E–AUTO–10/06
ATA2525
7. Chip Dimensions
Figure 7-1. Chip Size in µm
990,960
GND
393,839
IN
603,828
scribe
OUT
224,495
ATA2525
47,72
VS
Zapping
Versioning
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.04 mm
1.11 mm
290µ ±5%
80µ × 80µ
60µ × 60µ
AlCu/AlSiTi(1)
0.8 µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
(1)
Material
Si3N4/SiO2
Thickness
0.7/0.3 µm
Note:
1. Value depends on manufacture location.
9
4854E–AUTO–10/06
8. Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
ATA2525R1xx(1)-DDW
ATA2525R3xx(1)-DDW
ATA2525R5xx(1)-DDW
D(2)
1493
980
Type
Standard type: high data rate
Lamp type: enhanced suppression of disturbances, secure data transmission
Noise type: best suppression of disturbances, low data rate
730
Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 kHz)
2. Maximum data transmission rate up to bits/s with f0 = 40 kHz, VS = 5V (see Figure 6-2 on page 5)
9. Pad Layout
Figure 9-1. Pad Layout
GND
IN
OUT
ATA2525
VS
Zapping
Versioning
Table 9-1.
Pin Description
Symbol
OUT
Function
Data output
Supply voltage
GND
VS
GND
IN
Input pin diode
f0 adjust
Zapping
Versioning
type adjust
10
ATA2525
4854E–AUTO–10/06
ATA2525
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
• Section 2 “Pin Configuration” on page 2 deleted
• Section 4 “Electrical Characteristics” number 3.3 on page 4 changed
• Section 4 “Electrical Characteristics” number 3.4 on page 4 changed
• Section 6 “ESD” on page 5 deleted
4854E-AUTO-10/06
• Section 10 “Ordering Information” on page 10 changed
• Put datasheet in a new template
4854D-AUTO-04/06
• Section 10 “Ordering Information” on page 10 changed
11
4854E–AUTO–10/06
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4854E–AUTO–10/06
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