AMMP-5620_13 [AVAGO]
6 â 20 GHz High Gain Amplifier in SMT Package; 6 ???? 20 GHz高增益放大器采用SMT封装型号: | AMMP-5620_13 |
厂家: | AVAGO TECHNOLOGIES LIMITED |
描述: | 6 â 20 GHz High Gain Amplifier in SMT Package |
文件: | 总7页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AMMP-5620
6 – 20 GHz High Gain Amplifier in SMT Package
Data Sheet
Description
Features
The AMMP-5620 MMIC is a GaAs wide-band amplifier in • Surface Mount Package, 5.0 x 5.0 x 1.25 mm
a surface mount package designed for medium output
• Wide Frequency Range 6-20 GHz
• High Gain: 17.5 dB Typical
• Medium Output P1dB: 14.8 dBm Typical
• Input and Output Return Loss: <-10 dB Typical
• 50 Ohm Input and Output Match
power and high gain over the 6-20 GHz frequency range.
The 3 cascaded stages provide high gain while the single
bias supply offers ease of use. It is fabricated using a
PHEMT integrated circuit process. The RF input and
output ports have matching circuitry for use in 50-ohms
environments. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
• Single Supply Bias: 5V @ 95 mA Typical
Applications
Package Diagram
• Generalpurpose,widebandamplifierincommunication
systems or microwave instrumentation
NC
1
Vd
2
NC
3
• High Gain Amplifier
Pin
1
2
Function
NC
Functional Block Diagram
Vd
3
4
5
NC
RF_out
NC
Vd
0.1uF
RFin
8
4
RFout
6
7
NC
NC
1
2
3
8
RF_in
7
6
5
100pF
NC
NC
NC
RFin
RFout
7
6
5
AMMP-5620
Note: Package base: GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (40V)
ESD Human Body Model (150V)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius.
2. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance
may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
3. All tested parameters guaranteed with measurement accuracy 0.5 dB for NF and 1.0 dB for gain.
Table 1. RF Electrical Characteristics (T =25°C, Freq=18GHz, Vd=5.0V, Idq=95mA)
A
Parameter
Min
Typ.
17.5
5.1
Max
19.5
7.0
Unit
dB
Small-signal Gain, Gain
15.5
Noise Figure, NF
dB
Output Power at 1dB Gain Compression, P1dB
Third Order Intercept Point, OIP3
Input Return Loss, RLin
14.8
22.5
11.5
11.6
-43.0
dBm
dBm
dB
Output Return Loss, RLout
Reverse Isolation, Isolation
dB
dB
Table 2. Recommended Operating Range
Description
Min.
Typical
Max.
Unit
V
Drain Supply Voltage, Vd
Drain Supply Current, Id
Notes:
5
70
95
130
mA
1. Ambient operation temperature TA = 25°C unless otherwise noted.
2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Table 3. Thermal Properties
Parameter
Test Conditions
Value
Thermal Resistance, θjc
θjc = 28 °C/W
Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Min.
Max.
7.5
Unit
V
Comments
Drain Supply Voltage, Vd
Total Drain Current, Id
RF Input Power, Pin
135
20
mA
dBm
W
CW
Power Dissipation, Pd
Channel Temperature, Tch
Storage Temperature, Tstg
Maximum Assembly Temperature, Tmax
Notes:
1.0
+150
+150
+260
°C
-65
°C
°C
1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd
and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
2
Selected performance plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports.
20
16
12
8
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 3. Input Return Loss
Figure 1. Gain
Figure 2. Isolation
8
7
6
5
4
3
2
1
0
0
-5
20
16
12
8
-10
-15
-20
-25
-30
-35
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. P1dB
20
120
115
110
105
100
95
18 GHz
15
13 GHz
7 GHz
10
5
0
-5
-10
90
-20 -15 -10
-5
0
5
10
Pin (dBm)
Figure 7. Pout and Id vs. Pin
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
3
Over Voltage plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports.
20
0
-10
-20
-30
-40
0
-10
Vd=4V
Vd=5V
Vd=6V
16
12
8
-20
-30
-40
-50
-60
-70
Vd=4V
Vd=5V
Vd=6V
Vd=4V
Vd=5V
Vd=6V
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 8. Gain and Voltage
Figure 9. Isolation and Voltage
Figure 10. Input Return Loss and Voltage
8
7
6
5
4
3
2
1
0
0
-5
20
16
12
8
-10
-15
-20
-25
-30
-35
Vd=4V
Vd=5V
Vd=6V
Vd=4V
Vd=5V
Vd=6V
Vd=4V
Vd=5V
Vd=6V
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 11. Output Return Loss and Voltage
Figure 12. Noise Figure and Voltage
Figure 13. P1dB and Voltage
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
4
Over Temperature Performance Plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports
0
-10
-20
-30
-40
20
16
12
8
0
-10
-20
-30
-40
-50
-60
-70
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 14. Gain and Temperature
Figure 15. Isolation and Temperature
Figure 16. Input Return Loss and Temperature
0
-5
8
7
6
5
4
3
2
1
0
20
16
12
-10
-15
-20
-25
-30
-35
8
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
-40 °C
25 °C
85 °C
4
0
4
7
10
13
16
19
22
4
7
10
13
16
19
22
4
7
10
13
16
19
22
Frequency (GHz)
Frequency (GHz)
Frequency (GHz)
Figure 19. P1dB and Temperature
Figure 17. Output Return Loss and Temperature
Figure 18. Noise Figure and Temperature
100
95
90
-40 °C
25 °C
85
85 °C
80
3
3.5
4
4.5
5
5.5
6
Vd (V)
Figure 20. Id vs. Vd
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
5
Biasing and Operation
The AMMP-5620 only requires a single positive supply
connected to the Vd pin (2). The recommended supply
voltage is 5V. The supply should be bypassed with a
0.1uF capacitor placed as close to the component as
possible. The package base is the RF and DC ground con-
nection. The biasing arrangement is shown in Figure 21.
The AMMP Packaged Devices are compatible with high
volume surface mount PCB assembly processes.
The PCB material and mounting pattern, as defined in
the data sheet, optimizes RF performance and is strongly
recommended. An electronic drawing of the land pattern
is available upon request from Avago Sales & Application
Engineering.
Figure 22 shows a simplifies schematic for the amplifier
die. All three stages are self-biased as shown. Each stage
has feedback around it to control the gain, match and
performance, resulting in excellent wideband perfor-
mance. Also shown are the on-chip DC blocking capaci-
tors for both the RFin and RFout pins.
Please refer to the Absolute Maximum Ratings table for
allowed DC and thermal conditions.
Figure 23. Demonstration Board (available upon request)
Figure 21. Typical Application
Figure 22. Simplified MMIC Schematics
6
Typical Scattering Parameters
Please refer to <http://www.avagotech.com> for typical scattering parameters data.
Package Dimension, PCB Layout and Tape and Reel information
Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A).
Part Number Ordering Information
Devices per
Part Number
Container
Container
Antistatic Bag
7”Reel
AMMP-5620-BLKG
AMMP-5620-TR1G
AMMP-5620-TR2G
10
100
500
7”Reel
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0585EN
AV02-0513EN - July 16, 2013
相关型号:
©2020 ICPDF网 联系我们和版权申明