ASDL-6620-C31 [AVAGO]
Silicon NPN Phototransistor in T-1 Package; NPN硅光电晶体管在T-1封装
| 型号： | ASDL-6620-C31 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Silicon NPN Phototransistor in T-1 Package |
| 文件： | 总4页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASDL-6620
Silicon NPN Phototransistor in T-ꢀ Package
Data Sheet
Description
Features
ASDL-6620 is a silicon phototransistor in a standard T-1
package with options of clear and dark package. It has
high sensitivity, fast response time and low dark current.
Collector is denoted by a flat on the packaging diagram
and the shorter of the two leads. This device matches with
infrared emitter ASDL-4671 and is ideal for low cost, high
volume applications.
• T-1 package
• Option of Dark Lens that remove visible light
• Option of Clear Lens
• High Speed
• High Sensitivity
• Narrow Viewing Angle
Applications
• Suitable for detectors of Infrared Applications
• Smoke Detector
• Alarm System
• Photo Interrupter
• Industrial Equipment
ꢀ
Ordering Information
Part Number
Lead Form
Color
Packaging
Shipping Option
ASDL-66ꢁ0-Cꢁꢁ
ASDL-66ꢁ0-C3ꢀ
ASDL-66ꢁ0-Dꢁꢁ
ASDL-66ꢁ0-D3ꢀ
Straight
Clear
Tape & Reel
Bulk
Tape & Reel
Bulk
4000pcs
8000pcs / Carton
4000pcs
Dark
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice.
ꢁ
Absolute Maximum Ratings at T =25°C
A
Parameter
Symbol
Min.
Max
ꢀ00
30
Unit
mW
V
Power Dissipation
P
DISS
Collector Emitter Voltage
Emitter Collector Voltage
Operating Temperature
Storage Temperature
Junction temperature
V
CEO
V
ECO
5
V
T
O
-40
-55
85
°C
T
S
ꢀ00
ꢀꢀ0
°C
°C
T
J
°C
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
ꢁ60°C for 5 seconds
Electrical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Collector-Emitter
Breakdown Voltage
V
V
V
30
V
Ic= ꢀmA
Ee = 0mW/cm
(BR)CEO
(BR)ECO
CE(SAT)
CEO
ꢁ
ꢁ
ꢁ
Emitter-Collector
Breakdown Voltage
5
V
Ie = ꢀ00µA
Ee = 0mW/cm
Collector Emitter
Saturation Voltage
0.4
V
Ie = 0.5mA
Ee = ꢀmW/cm
Collector Dark Current
I
ꢀ00
nA
°C/W
V =ꢀ0V
CE
Ee=0mW/cm
ꢁ
Thermal Resistance,
Junction to Pin
Rq
350
JP
Optical Characteristics at 25°C
Parameter
Symbol
Min.
Typ.
ꢁ0
Max.
Unit
Deg
nm
nm
nm
µs
Condition
Viewing Angle
ꢁθꢀ/ꢁ
Wavelength of Peak sensitivity
Spectral BandWidth
λ
900
900
900
ꢀ0
PK
Δλ
400
700
ꢀꢀ00
ꢀꢀ00
Clear
Dark
Rise Time
t
r
V = 5V
CC
Ic = ꢀmA
RL = ꢀKΩ
Fall Time
t
f
ꢀ0
µs
V = 5V
CC
Ic = ꢀmA
R = ꢀKΩ
L
On State Collector Current
I
ꢀ.6
9.6
mA
V = 5V
CE
Ee = ꢀmW/cm
λ = 940nm
C(ON)
ꢁ
3
Typical Electrical/Optical Characteristics Curves (T =25˚C unless otherwise indicated)
A
120
100
10
1
100
80
60
0.1
40
20
0
0.01
0
0
40
80
120
-40 -20
0
20 40 60 80 100
Ta-Ambient Temperature- o C
Ta-Ambient Temperature- o C
FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
200
Vcc=5V
VRL=1V
F =100Hz
180
4.0 Vce= 5V
160
140
120
100
80
PW =1ms
3.0
2.0
1.0
0
tf
tr
60
40
20
0
0
2
4
6
8
10
0
1
2
3
4
5
RL-Load Resistance-K
FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE
Ee-Irradiance-mW/cm2
FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
10o 20o
0o
30o
40o
1.0
50o
60o
0.9
0.8
70o
80o
90o
0.7
0.5 0.3 0.1
0.2 0.4 0.6
FIGURE 5. SENSITIVITY DIAGRAM
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Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢁ007 Avago Technologies Limited. All rights reserved.
AV0ꢁ-00ꢀ3EN - January ꢁꢁ, ꢁ007
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