HBAT-540B-TR1G [AVAGO]
High Performance Schottky Diode for Transient Suppression; 高性能肖特基二极管瞬态抑制
| 型号： | HBAT-540B-TR1G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | High Performance Schottky Diode for Transient Suppression |
| 文件： | 总8页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HBAT-5400, 5402, 540B, 540C
High Performance Schottky Diode
forTransient Suppression
Data Sheet
Description
Features
•ꢀ Ultra-lowꢀSeriesꢀResistanceꢀforꢀHigherꢀCurrentꢀ
Theꢀ HBAT-540xꢀ seriesꢀ ofꢀ Schottkyꢀ diodes,ꢀ commonlyꢀ
referredꢀtoꢀasꢀclipping/clampingꢀdiodes,ꢀareꢀoptimalꢀforꢀ
circuitꢀ andꢀ waveshapeꢀ preservationꢀ applicationsꢀ withꢀ
highꢀspeedꢀswitching.ꢀLowꢀseriesꢀresistance,ꢀRS,ꢀmakesꢀ
themꢀ idealꢀ forꢀ protectingꢀ sensitiveꢀ circuitꢀ elementsꢀ
againstꢀ highꢀ currentꢀ transientsꢀ carriedꢀ onꢀ dataꢀ lines.ꢀ
Withꢀpicosecondꢀswitching,ꢀtheꢀHBAT-540xꢀcanꢀrespondꢀ
toꢀnoiseꢀspikesꢀwithꢀriseꢀtimesꢀasꢀfastꢀasꢀ1ꢀns.ꢀLowꢀcapaci-
tanceꢀminimizesꢀwaveshapeꢀlossꢀthatꢀcausesꢀsignalꢀdeg-
radation.
Handling
•ꢀ LowꢀCapacitance
•ꢀ LowꢀSeriesꢀResistance
•ꢀ Lead-freeꢀOptionꢀAvailable
Applications
RFꢀandꢀcomputerꢀdesignsꢀthatꢀrequireꢀcircuitꢀprotection,ꢀ
high-speedꢀswitching,ꢀandꢀvoltageꢀclamping.
Package Lead Code Identification (Top View)
SINGLE
3
SERIES
3
0, B
2, C
1
2
1
2
Absolute Maximum Ratings, TA= 25ºC
Absolute Maximum[1]
Symbol
Parameter
Unit
HBAT-5400/-5402
HBAT-540B/-540C
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
IFꢀ
IF- peakꢀ
PTꢀ
DCꢀForwardꢀCurrentꢀ
mAꢀ
Aꢀ
ꢁꢁ0ꢀ
1.0ꢀ
430
1.0
PeakꢀSurgeꢀCurrentꢀ(1µsꢀpulse)ꢀ
TotalꢀPowerꢀDissipationꢀ
PeakꢀInverseꢀVoltageꢀ
mWꢀ
Vꢀ
ꢁ50ꢀ
8ꢁ5
PINVꢀ
TJꢀ
30ꢀ
30
JunctionꢀTemperatureꢀ
°Cꢀ
150ꢀ
150
TSTG
ꢀ
StorageꢀTemperatureꢀ
°Cꢀ
-65ꢀtoꢀ150ꢀ
500ꢀ
-65ꢀtoꢀ150
150
θJCꢀ
ThermalꢀResistance,ꢀjunctionꢀtoꢀleadꢀ
°C/Wꢀ
Note:
1.ꢀ Operationꢀinꢀexcessꢀofꢀanyꢀoneꢀofꢀtheseꢀconditionsꢀmayꢀresultꢀinꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.
Linear and Non-linear SPICE Model[2]
SPICE Parameters
0.08 pF
Parameter
Unit
Vꢀ
pFꢀ
eVꢀ
Aꢀ
Aꢀ
ꢀ
Value
40
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
BVꢀ
CJOꢀ
EGꢀ
IBVꢀ
ISꢀ
3.0
0.55
10E-4
1.0E-7
1.0
2 nH
R
S
SPICE model
Nꢀ
RSꢀ
PBꢀ
PTꢀ
Mꢀ
Ωꢀ
Vꢀ
ꢀ
ꢁ.4
Note:
0.6
ꢁ.ꢀ ToꢀeffectivelyꢀmodelꢀtheꢀpackagedꢀHBAT-540xꢀproduct,ꢀpleaseꢀreferꢀtoꢀ
ApplicationꢀNoteꢀAN11ꢁ4.
ꢁ
ꢀ
0.5
HBAT-540x DC Electrical Specifications, TA = +25°C[1]
Maximum
Minimum
Breakdown
Voltage
Typical
Series
Resistance
t (ps)
Maximum
Eff. Carrier
Lifetime
Part
Number
Package
Marking
Code Configuration
Forward
Voltage
VBR (V)
Typical
Capacitance
RS (Ω)
Lead
HBAT-Code[2]
Package
VF (mV)
CT (pF)
ꢀ
ꢀ
-5400ꢀ
ꢀ
0ꢀ
ꢀ
SOT-ꢁ3
V0
Single
ꢀ
800[3]
ꢀ
30[4]ꢀ
3.0[5]ꢀ
ꢁ.4ꢀ
100[6]
SOT-3ꢁ3ꢀ
(3-leadꢀSC-70)
ꢀ
ꢀ
-540Bꢀ
ꢀ
ꢀ
Bꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-540ꢁꢀ
-540Cꢀ
ꢀ
ꢁꢀ
Cꢀ
ꢀ
SOT-ꢁ3ꢀ
Vꢁ
ꢀ
Series
ꢀ
ꢀ
SOT-3ꢁ3
(3-lead SC-70)
ꢀ
ꢀ
Notes:
1.ꢀ TAꢀ=ꢀ+ꢁ5°C,ꢀwhereꢀTAꢀisꢀdefinedꢀtoꢀbeꢀtheꢀtemperatureꢀatꢀtheꢀpackageꢀpinsꢀwhereꢀcontactꢀisꢀmadeꢀtoꢀtheꢀcircuitꢀboard.
ꢁ.ꢀ Packageꢀmarkingꢀcodeꢀisꢀlaserꢀmarked.
3.ꢀ IFꢀ=ꢀ100ꢀmA;ꢀ100%ꢀtested
4.ꢀ IRꢀ=ꢀ100ꢀµA;ꢀ100%ꢀtested
5.ꢀꢀVFꢀ=ꢀ0;ꢀfꢀ=1ꢀMHz
6.ꢀ MeasuredꢀwithꢀKarkauerꢀmethodꢀatꢀꢁ0ꢀmAꢀguaranteedꢀbyꢀdesign.
ꢁ
Typical Performance
300
100
160
140
120
100
80
500
100
Max. safe junction temp.
10
1
10
1
60
40
0.1
0.1
TA = +75C
TA = +25C
TA = –25C
TA = +75C
TA = +25C
TA = –25C
TA = +75C
TA = +25C
TA = –25C
20
0
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0
50
I – FORWARD CURRENT (mA)
F
100
150
200
250
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
– FORWARD VOLTAGE (V)
I
– FORWARD CURRENT (mA)
F
F
Figure 1. Forward Current vs. Forward Voltage at
Temperature for HBAT-5400 and HBAT-5402.
Figure 2. Forward Current vs. Forward Voltage at
Temperature for HBAT-540B and HBAT-540C.
Figure 3. Junction Temperature vs. Current as a
Function of Heat Sink Temperature for HBAT-5400
and HBAT-5402.
Note: Data is calculated from SPICE parameters.
160
3.0
2.5
2.0
Max. safe junction temp.
140
120
100
80
60
1.5
1.0
40
TA = +75C
TA = +25C
TA = –25C
20
0
0
100 200 300 400 500 600
– FORWARD CURRENT (mA)
0
5
10
V – REVERSE VOLTAGE (V)
R
15
20
I
F
Figure 4. Junction Temperature vs. Current as a
Function of Heat Sink Temperature for HBAT-540B
and HBAT-540C.
Figure 5. Total Capacitance vs. Reverse Voltage.
Note: Data is calculated from SPICE parameters.
Device Orientation For Outlines SOT-23/323
TOP VIEW
4 mm
END VIEW
REEL
8 mm
CARRIER
TAPE
ABC
ABC
ABC
ABC
USER
FEED
DIRECTION
Note: "AB" represents package marking code.
"C" represents date code.
COVER TAPE
3
Recommended PCB Pad Layout for Avago’s
SOT-23 Products
Package Dimensions
Outline SOT-23
e2
0.039
1
e1
0.039
1
E1
E
XXX
0.079
2.0
e
L
0.035
0.9
B
D
C
DIMENSIONS (mm)
0.031
0.8
SYMBOL
MIN.
0.79
0.000
0.37
0.086
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.152
3.13
1.50
1.02
2.04
0.60
2.70
0.69
A
A1
B
A
inches
Dimensions in
mm
C
D
A1
E1
e
e1
e2
E
Notes:
XXX-package marking
Drawings are not to scale
L
Tape Dimensions and Product Orientation For Outline SOT-23
P
P
D
2
E
F
P
0
W
D
1
t1
Ko
13.5° MAX
8° MAX
9° MAX
B
A
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.05
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 ± 0.002
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
CARRIER TAPE
DIAMETER
PITCH
POSITION
D
1.50 + 0.10
4.00 ± 0.10
1.75 ± 0.10
0.059 + 0.004
0.157 ± 0.004
0.069 ± 0.004
P
E
0
WIDTH
W
8.00+0.30–0.10 0.315+0.012–0.004
THICKNESS
t1
0.229 ± 0.013
0.009 ± 0.0005
DISTANCE
BETWEEN
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CENTERLINE
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 ± 0.05
0.079 ± 0.002
2
4
Recommended PCB Pad Layout for Avago’s
SC70 3L/SOT-323 Products
Package Dimensions
Outline SOT-323 (SC-70 3 Lead)
e1
0.026
E1
E
XXX
e
L
0.079
B
C
0.039
D
DIMENSIONS (mm)
SYMBOL
MIN.
0.80
0.00
0.15
0.10
1.80
1.10
MAX.
1.00
0.10
0.40
0.20
2.25
1.40
A
A1
B
0.022
A
C
Dimensions in inches
D
A1
E1
e
0.65 typical
1.30 typical
1.80 2.40
0.425 typical
e1
E
Notes:
XXX-package marking
L
Drawings are not to scale
Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
8° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
P
E
0
CARRIER TAPE
COVER TAPE
DISTANCE
WIDTH
THICKNESS
W
8.00 ± 0.30
0.254 ± 0.02
0.315 ± 0.012
0.0100 ± 0.0008
t
1
WIDTH
TAPE THICKNESS
C
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
T
t
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 ± 0.05
0.079 ± 0.002
2
5
Applications Information
P
N
METAL N
Schottky Diode Fundamentals
Theꢀ HBAT-540xꢀ seriesꢀ ofꢀ clipping/clampingꢀ diodesꢀ
areꢀSchottkyꢀdevices.ꢀAꢀSchottkyꢀdeviceꢀisꢀaꢀrectifying,ꢀ
metal-semiconductorꢀcontactꢀformedꢀbetweenꢀaꢀmetalꢀ
andꢀanꢀn-dopedꢀorꢀaꢀp-dopedꢀsemiconductor.ꢀWhenꢀaꢀ
metal-semiconductorꢀjunctionꢀisꢀformed,ꢀfreeꢀelectronsꢀ
flowꢀacrossꢀtheꢀjunctionꢀfromꢀtheꢀsemiconductorꢀandꢀfillꢀ
theꢀfree-energyꢀstatesꢀinꢀtheꢀmetal.ꢀThisꢀflowꢀofꢀelectronsꢀ
createsꢀaꢀdepletionꢀorꢀpotentialꢀacrossꢀtheꢀjunction.ꢀTheꢀ
differenceꢀinꢀenergyꢀlevelsꢀbetweenꢀsemiconductorꢀandꢀ
metalꢀisꢀcalledꢀaꢀSchottkyꢀbarrier.
CAPACITANCE
CURRENT
CURRENT
0.3V
CAPACITANCE
0.6V
–
+
–
+
BIAS VOLTAGE
BIAS VOLTAGE
PN JUNCTION
SCHOTTKY JUNCTION
Figure 6.
Throughꢀtheꢀcarefulꢀmanipulationꢀofꢀtheꢀdiameterꢀofꢀtheꢀ
Schottkyꢀcontactꢀandꢀtheꢀchoiceꢀofꢀmetalꢀdepositedꢀonꢀ
theꢀn-dopedꢀsilicon,ꢀtheꢀimportantꢀcharacteristicsꢀofꢀtheꢀ
diodeꢀ (junctionꢀ capacitance,ꢀ CJ;ꢀ parasiticꢀ seriesꢀ resis-
tance,ꢀRS;ꢀbreakdownꢀvoltage,ꢀVBR;ꢀandꢀforwardꢀvoltage,ꢀ
VF,)ꢀcanꢀbeꢀoptimizedꢀforꢀspecificꢀapplications.ꢀTheꢀHSMS-
ꢁ70xꢀseriesꢀandꢀHBAT-540xꢀseriesꢀofꢀdiodesꢀareꢀaꢀcaseꢀinꢀ
point.
P-doped,ꢀ Schottky-barrierꢀ diodesꢀ excelꢀ atꢀ applicationsꢀ
requiringꢀultraꢀlowꢀturn-onꢀvoltageꢀ(suchꢀasꢀzero-biasedꢀ
RFꢀ detectors).ꢀ Butꢀ theirꢀ veryꢀ low,ꢀ breakdown-voltageꢀ
andꢀ highꢀ series-resistanceꢀ makeꢀ themꢀ unsuitableꢀ forꢀ
theꢀ clippingꢀ andꢀ clampingꢀ applicationsꢀ involvingꢀ highꢀ
forwardꢀ currentsꢀ andꢀ highꢀ reverseꢀ voltages.ꢀ Therefore,ꢀ
thisꢀ discussionꢀ willꢀ focusꢀ entirelyꢀ onꢀ n-dopedꢀ Schottkyꢀ
diodes.
Bothꢀ diodesꢀ haveꢀ similarꢀ barrierꢀ heights;ꢀ andꢀ thisꢀ
isꢀ indicatedꢀ byꢀ correspondingꢀ valuesꢀ ofꢀ saturationꢀ
current,ꢀIS.ꢀYet,ꢀdifferentꢀcontactꢀdiametersꢀandꢀepitaxial-
layerꢀthicknessꢀresultꢀinꢀveryꢀdifferentꢀvaluesꢀofꢀjunctionꢀ
capacitance,ꢀCJꢀandꢀRS.ꢀThisꢀisꢀportrayedꢀbyꢀtheirꢀSPICEꢀ
parametersꢀinꢀTableꢀ1.
Underꢀaꢀforwardꢀbiasꢀ(metalꢀconnectedꢀtoꢀpositiveꢀinꢀanꢀ
n-dopedꢀSchottky),ꢀorꢀforwardꢀvoltage,ꢀVF,ꢀthereꢀareꢀmanyꢀ
electronsꢀwithꢀenoughꢀthermalꢀenergyꢀtoꢀcrossꢀtheꢀbarrierꢀ
potentialꢀintoꢀtheꢀmetal.ꢀOnceꢀtheꢀappliedꢀbiasꢀexceedsꢀ
theꢀbuilt-inꢀpotentialꢀofꢀtheꢀjunction,ꢀtheꢀforwardꢀcurrent,ꢀ
IF,ꢀwillꢀincreaseꢀrapidlyꢀasꢀVFꢀincreases.
Table 1. HBAT-540x and HSMS-270x SPICE Parameters.
Parameter
BVꢀ
HBAT-540x
40ꢀVꢀ
HSMS-270x
ꢁ5ꢀV
WhenꢀtheꢀSchottkyꢀdiodeꢀisꢀreverseꢀbiased,ꢀtheꢀpotentialꢀ
barrierꢀ forꢀ electronsꢀ becomesꢀ large;ꢀ hence,ꢀ thereꢀ isꢀ
aꢀ smallꢀ probabilityꢀ thatꢀ anꢀ electronꢀ willꢀ haveꢀ suffi-
cientꢀthermalꢀenergyꢀtoꢀcrossꢀtheꢀjunction.ꢀTheꢀreverseꢀ
leakageꢀcurrentꢀwillꢀbeꢀinꢀtheꢀnanoampereꢀtoꢀmicroam-
pereꢀrange,ꢀdependingꢀuponꢀtheꢀdiodeꢀtype,ꢀtheꢀreverseꢀ
voltage,ꢀandꢀtheꢀtemperature.
CJ0ꢀ
EGꢀ
3.0ꢀpFꢀ
0.55ꢀeVꢀ
10E-4ꢀAꢀ
1.0E-7ꢀAꢀ
1.0ꢀ
6.7ꢀpF
0.55ꢀeV
10E-4ꢀA
1.4E-7ꢀA
1.04
IBVꢀ
ISꢀ
Nꢀ
RSꢀ
ꢁ.4ꢀΩꢀ
0.6ꢀVꢀ
0.65ꢀΩ
0.6ꢀV
Inꢀ contrastꢀ toꢀ aꢀ conventionalꢀ p-nꢀ junction,ꢀ currentꢀ inꢀ
theꢀSchottkyꢀdiodeꢀisꢀcarriedꢀonlyꢀbyꢀmajorityꢀcarriers.ꢀ
Becauseꢀnoꢀminorityꢀcarrierꢀchargeꢀstorageꢀeffectsꢀareꢀ
present,ꢀ Schottkyꢀ diodesꢀ haveꢀ carrierꢀ lifetimesꢀ ofꢀ lessꢀ
thanꢀ 100ꢀpsꢀ andꢀ areꢀ extremelyꢀ fastꢀ switchingꢀ semi-
conductors.ꢀ Schottkyꢀ diodesꢀ areꢀ usedꢀ asꢀ rectifiersꢀ atꢀ
frequenciesꢀofꢀ50ꢀGHzꢀandꢀhigher.
PBꢀ
PTꢀ
ꢁꢀ
ꢁ
Mꢀ
0.5ꢀ
0.5
AtꢀlowꢀvaluesꢀofꢀIFꢀ≤ꢀ1ꢀmA,ꢀtheꢀforwardꢀvoltagesꢀofꢀtheꢀ
twoꢀdiodesꢀareꢀnearlyꢀidentical.ꢀHowever,ꢀasꢀcurrentꢀrisesꢀ
aboveꢀ10ꢀmA,ꢀtheꢀlowerꢀseriesꢀresistanceꢀofꢀtheꢀHSMS-
ꢁ70xꢀallowsꢀforꢀaꢀmuchꢀlowerꢀforwardꢀvoltage.ꢀThisꢀgivesꢀ
theꢀHSMS-ꢁ70xꢀaꢀmuchꢀhigherꢀcurrentꢀhandlingꢀcapabil-
ity.ꢀTheꢀtrade-offꢀisꢀaꢀhigherꢀvalueꢀofꢀjunctionꢀcapacitance.ꢀ
Theꢀforwardꢀvoltageꢀandꢀcurrentꢀplotsꢀillustrateꢀtheꢀdiffer-
encesꢀinꢀtheseꢀtwoꢀSchottkyꢀdiodes,ꢀasꢀshownꢀinꢀFigureꢀ
7.
Anotherꢀ significantꢀ differenceꢀ betweenꢀ Schottkyꢀ andꢀ
p-nꢀdiodesꢀisꢀtheꢀforwardꢀvoltageꢀdrop.ꢀSchottkyꢀdiodesꢀ
haveꢀaꢀthresholdꢀofꢀtypicallyꢀ0.3ꢀVꢀinꢀcomparisonꢀtoꢀthatꢀ
ofꢀ0.6ꢀVꢀinꢀp-nꢀjunctionꢀdiodes.ꢀSeeꢀFigureꢀ6.
6
300
100
Maximumꢀ reliabilityꢀ isꢀ obtainedꢀ inꢀ aꢀ Schottkyꢀ diodeꢀ
whenꢀ theꢀ steadyꢀ stateꢀ junctionꢀ temperatureꢀ isꢀ main-
tainedꢀatꢀorꢀbelowꢀ150°C,ꢀalthoughꢀbriefꢀexcursionsꢀtoꢀ
higherꢀjunctionꢀtemperaturesꢀcanꢀbeꢀtoleratedꢀwithꢀnoꢀ
significantꢀimpactꢀuponꢀmean-time-to-failure,ꢀMTTF.ꢀInꢀ
orderꢀtoꢀcomputeꢀtheꢀjunctionꢀtemperature,ꢀEquationsꢀ
(1)ꢀandꢀ(3)ꢀbelowꢀmustꢀbeꢀsimultaneouslyꢀsolved.
HSMS-270x
HBAT-540x
10
1
.1
11600 (V – I R )
F
F S
nT
(1)
J
.01
I = I
F
e
–1
S
0
0.1
0.2
0.3
0.4
0.5
0.6
V
– FORWARD VOLTAGE (V)
F
2
n
1
1
298
–
–4060
T
298
(2)
(3)
J
T
J
I = I
S
e
Figure 7. Forward Current vs. Forward Voltage at 25°C.
0
Becauseꢀtheꢀautomatic,ꢀpick-and-placeꢀequipmentꢀusedꢀ
toꢀassembleꢀtheseꢀproductsꢀselectsꢀdiceꢀfromꢀadjacentꢀ
sitesꢀonꢀtheꢀwafer,ꢀtheꢀtwoꢀdiodesꢀwhichꢀgoꢀintoꢀtheꢀHBAT-
540ꢁꢀorꢀHBAT-540Cꢀ(seriesꢀpair)ꢀareꢀcloselyꢀmatched—
withoutꢀtheꢀaddedꢀexpenseꢀofꢀtestingꢀandꢀbinning.
T
= V I θ + T
F F JC
J
A
where:
IFꢀ=ꢀforwardꢀcurrent
ISꢀ=ꢀsaturationꢀcurrent
VFꢀ=ꢀforwardꢀvoltage
RSꢀ=ꢀseriesꢀresistance
Current Handling in Clipping/Clamping Circuits
Theꢀpurposeꢀofꢀaꢀclipping/clampingꢀdiodeꢀisꢀtoꢀhandleꢀ
highꢀ currents,ꢀ protectingꢀ delicateꢀ circuitsꢀ downstreamꢀ
ofꢀtheꢀdiode.ꢀCurrentꢀhandlingꢀcapacityꢀisꢀdeterminedꢀ
byꢀtwoꢀsetsꢀofꢀcharacteristics,ꢀthoseꢀofꢀtheꢀchipꢀorꢀdeviceꢀ
itselfꢀandꢀthoseꢀofꢀtheꢀpackageꢀintoꢀwhichꢀitꢀisꢀmounted.
TJꢀ=ꢀjunctionꢀtemperature
IOꢀ=ꢀsaturationꢀcurrentꢀatꢀꢁ5°C
nꢀ=ꢀdiodeꢀidealityꢀfactor
noisy data-spikes
θJCꢀ=ꢀthermalꢀresistanceꢀfromꢀjunctionꢀtoꢀcaseꢀ
(diodeꢀlead)
current
Vs
limiting
ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀ=ꢀθpackageꢀ+ꢀθchip
long cross-site cable
pull-down
TAꢀ=ꢀambientꢀ(diodeꢀlead)ꢀtemperature
Equationꢀ(1)ꢀdescribesꢀtheꢀforwardꢀV-IꢀcurveꢀofꢀaꢀSchottkyꢀ
diode.ꢀEquationꢀ(ꢁ)ꢀprovidesꢀtheꢀvalueꢀforꢀtheꢀdiode’sꢀsat-
urationꢀcurrent,ꢀwhichꢀvalueꢀisꢀpluggedꢀintoꢀ(1).ꢀEquationꢀ
(3)ꢀgivesꢀtheꢀvalueꢀofꢀjunctionꢀtemperatureꢀasꢀaꢀfunctionꢀ
ofꢀ powerꢀ dissipatedꢀ inꢀ theꢀ diodeꢀ andꢀ ambientꢀ (lead)ꢀ
temperature.
0V
(or pull-up)
voltage limited to
Vs + Vd
0V – Vd
Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit.
Considerꢀ theꢀ circuitꢀ shownꢀ inꢀ Figureꢀ 8,ꢀ inꢀ whichꢀ twoꢀ
Schottkyꢀdiodesꢀareꢀusedꢀtoꢀprotectꢀaꢀcircuitꢀfromꢀnoiseꢀ
spikesꢀonꢀaꢀstreamꢀofꢀdigitalꢀdata.ꢀTheꢀabilityꢀofꢀtheꢀdiodesꢀ
toꢀlimitꢀtheꢀvoltageꢀspikesꢀisꢀrelatedꢀtoꢀtheirꢀabilityꢀtoꢀsinkꢀ
theꢀassociatedꢀcurrentꢀspikes.ꢀTheꢀimportanceꢀofꢀcurrentꢀ
handlingꢀcapacityꢀisꢀshownꢀinꢀFigureꢀ9,ꢀwhereꢀtheꢀforwardꢀ
voltageꢀgeneratedꢀbyꢀaꢀforwardꢀcurrentꢀisꢀcomparedꢀinꢀ
twoꢀdiodes.ꢀTheꢀfirstꢀisꢀaꢀconventionalꢀSchottkyꢀdiodeꢀofꢀ
theꢀtypeꢀgenerallyꢀusedꢀinꢀRFꢀcircuits,ꢀwithꢀanꢀRSꢀofꢀ7.7Ω.ꢀ
TheꢀsecondꢀisꢀaꢀSchottkyꢀdiodeꢀofꢀidenticalꢀcharacteris-
tics,ꢀsaveꢀtheꢀRSꢀꢀofꢀ1.0ꢀΩ.ꢀForꢀtheꢀconventionalꢀdiode,ꢀtheꢀ
relativelyꢀhighꢀvalueꢀofꢀRSꢀꢀcausesꢀtheꢀvoltageꢀacrossꢀtheꢀ
diode’sꢀterminalsꢀtoꢀriseꢀasꢀcurrentꢀincreases.ꢀTheꢀpowerꢀ
dissipatedꢀinꢀtheꢀdiodeꢀheatsꢀtheꢀjunction,ꢀcausingꢀRSꢀꢀtoꢀ
climb,ꢀgivingꢀriseꢀtoꢀaꢀrunawayꢀthermalꢀcondition.ꢀInꢀtheꢀ
secondꢀdiodeꢀwithꢀlowꢀRSꢀ,ꢀsuchꢀheatingꢀdoesꢀnotꢀtakeꢀ
placeꢀandꢀtheꢀvoltageꢀacrossꢀtheꢀdiodeꢀterminalsꢀisꢀmain-
tainedꢀatꢀaꢀlowꢀlimitꢀevenꢀatꢀhighꢀvaluesꢀofꢀcurrent.
6
5
4
R
= 7.7 Ω
s
3
2
R
= 1.0 Ω
s
1
0
0
0.1
0.2
0.3
0.4
0.5
I
– FORWARD CURRENT (mA)
F
Figure 9. Comparison of Two Diodes.
7
Theꢀkeyꢀfactorsꢀinꢀtheseꢀequationsꢀare:ꢀRS,ꢀtheꢀseriesꢀresis-
tanceꢀofꢀtheꢀdiodeꢀwhereꢀheatꢀisꢀgeneratedꢀunderꢀhighꢀ
currentꢀ conditions;ꢀ θchip,ꢀ theꢀ chipꢀ thermalꢀ resistanceꢀ ofꢀ
theꢀ Schottkyꢀ die;ꢀ andꢀ θpackage,ꢀ orꢀ theꢀ packageꢀ thermalꢀ
resistance.
Part Number Ordering Information
Part Number
No. of Devices
Container
HBAT-5400-BLKGꢀ
HBAT-5400-TR1Gꢀ
HBAT-5400-TRꢁGꢀ
100ꢀ
3,000ꢀ
10,000ꢀ
AntistaticꢀBag
7"ꢀReel
13"ꢀReel
RSꢀforꢀtheꢀHBAT-540xꢀfamilyꢀofꢀdiodesꢀisꢀtypicallyꢀꢁ.4Ω,ꢀ
otherꢀ thanꢀ theꢀ HSMS-ꢁ70xꢀ family,ꢀ thisꢀ isꢀ theꢀ lowestꢀ ofꢀ
anyꢀSchottkyꢀdiodeꢀavailable.ꢀChipꢀthermalꢀresistanceꢀisꢀ
typicallyꢀ40°C/W;ꢀtheꢀthermalꢀresistanceꢀofꢀtheꢀiron-alloy-
leadframe,ꢀSOT-ꢁ3ꢀpackageꢀisꢀtypicallyꢀ460°C/W;ꢀandꢀtheꢀ
thermalꢀ resistanceꢀ ofꢀ theꢀ copper-leadframe,ꢀ SOT-3ꢁ3ꢀ
packageꢀ isꢀ typicallyꢀ 110°C/W.ꢀ Theꢀ impactꢀ ofꢀ packageꢀ
thermalꢀ resistanceꢀ onꢀ theꢀ currentꢀ handlingꢀ capabilityꢀ
ofꢀtheseꢀdiodesꢀcanꢀbeꢀseenꢀinꢀFiguresꢀ3ꢀandꢀ4.ꢀHereꢀtheꢀ
computedꢀ valuesꢀ ofꢀ junctionꢀ temperatureꢀ vs.ꢀ forwardꢀ
currentꢀareꢀshownꢀforꢀthreeꢀvaluesꢀofꢀambientꢀtempera-
ture.ꢀTheꢀSOT-3ꢁ3ꢀproducts,ꢀwithꢀtheirꢀcopperꢀleadframes,ꢀ
canꢀsafelyꢀhandleꢀalmostꢀtwiceꢀtheꢀcurrentꢀofꢀtheꢀlargerꢀ
HBAT-540ꢁ-BLKGꢀ
HBAT-540ꢁ-TR1Gꢀ
HBAT-540ꢁ-TRꢁGꢀ
100ꢀ
3,000ꢀ
10,000ꢀ
AntistaticꢀBag
7"ꢀReel
13"ꢀReel
HBAT-540B-BLKGꢀ
HBAT-540B-TR1Gꢀ
HBAT-540B-TRꢁGꢀ
100ꢀ
3,000ꢀ
10,000ꢀ
AntistaticꢀBag
7"ꢀReel
13"ꢀReel
HBAT-540C-BLKGꢀ
HBAT-540C-TR1Gꢀ
HBAT-540C-TRꢁGꢀ
100ꢀ
3,000ꢀ
10,000ꢀ
AntistaticꢀBag
7"ꢀReel
13"ꢀReel
SOT-ꢁ3ꢀdiodes.ꢀNoteꢀthatꢀtheꢀterm“ambientꢀtemperature”ꢀ
refersꢀtoꢀtheꢀtemperatureꢀofꢀtheꢀdiode’sꢀleads,ꢀnotꢀtheꢀairꢀ
aroundꢀtheꢀcircuitꢀboard.ꢀItꢀcanꢀbeꢀseenꢀthatꢀtheꢀHBAT-
540BꢀandꢀHBAT-540CꢀproductsꢀinꢀtheꢀSOT-3ꢁ3ꢀpackageꢀ
willꢀsafelyꢀwithstandꢀaꢀsteady-stateꢀforwardꢀcurrentꢀofꢀ330ꢀ
mAꢀwhenꢀtheꢀdiode’sꢀterminalsꢀareꢀmaintainedꢀatꢀ75°C.
Forꢀpulsedꢀcurrentsꢀandꢀtransientꢀcurrentꢀspikesꢀofꢀlessꢀ
thanꢀ oneꢀ microsecondꢀ inꢀ duration,ꢀ theꢀ junctionꢀ doesꢀ
notꢀhaveꢀtimeꢀtoꢀreachꢀthermalꢀsteadyꢀstate.ꢀMoreover,ꢀ
theꢀdiodeꢀjunctionꢀmayꢀbeꢀtakenꢀtoꢀtemperaturesꢀhigherꢀ
thanꢀ 150°Cꢀ forꢀ shortꢀ timeperiodsꢀ withoutꢀ impactingꢀ
deviceꢀMTTF.ꢀBecauseꢀofꢀtheseꢀfactors,ꢀhigherꢀcurrentsꢀ
canꢀ beꢀ safelyꢀ handled.ꢀ Theꢀ HBAT-540xꢀ familyꢀ hasꢀ theꢀ
secondꢀhighestꢀcurrentꢀhandlingꢀcapabilityꢀofꢀanyꢀAvagoꢀ
diode,ꢀnextꢀtoꢀtheꢀHSMS-ꢁ70xꢀseries.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, AvagoTechnologies, and the A logo are trademarks of AvagoTechnologies in the United States and other countries.
Data subject to change. Copyright © 2005-2008 AvagoTechnologies. All rights reserved. Obsoletes 5989-4779EN
AV02-1394EN - July 4, 2008
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